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Analytical Modeling for Dark and Photo Current Characteristics of Short Channel GaAs MESFETs  

김정문 (제주산업정보대학 정보통신과)
서정하 (홍익대학교 전자전기공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.3, 2004 , pp. 15-30 More about this Journal
Abstract
In this paper, an analytical modeling for the dark and photo-current characteristics of a buried-gate short- channel GaAs MESFET is presented. The presented model shows that the increase of drain current under illumination is largely due to not the increase of photo-conductivity in the neutral region but the narrowing effect of the depletion layer width. The carrier density profile within the neutral region is derived from solving the carrier continuity equation one-dimensionally. In deriving the photo-generated current, we assume that the photo-current is compensated with the thermionic emission current at the gate-channel interface. Moreover, the two-dimensional Poisson's equation is solved by taking into account the drain-induced longitudinal field effect. In conclusion, the proposed model seems to provide a reasonable explanation for the dark and photo current characteristics in a unified manner.
Keywords
GaAs MESFET/ OPFET 광특성;
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Times Cited By KSCI : 2  (Citation Analysis)
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