• Journal of the Society of Naval Architects of Korea
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• v.32 no.3
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• pp.62-71
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• 1995

In the numerical analysis of incompressible unsteady Navier-stokes equation, large time is required for solving the pressure Poisson equation of the elliptic type at each time step. In this paper, a numerical analysis by the direct method is carried out to solve the pressure Poisson equation and the computing time is analyzed as mesh size increases. The pressure Poisson equation can be transformed to the boundary value problem by the Green theorem. The computing time for the convolution type of the domain integral can be reduced by using F.F.T. and the computing time in the direct method depends entirely on obtaining the solution of the boundary value problem. The numerical analysis on the known solutions is carried out and compared for the verification of the direct method. And the numerical analysis on the body boundary and domain decomposition problem are carried out with the computing time less than O($n^{3}$) in the (n.n) mesh.

• Journal of the Society of Naval Architects of Korea
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• v.33 no.4
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• pp.48-59
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• 1996

The numerical step in the unsteady viscous flow analysis can be divided in the space analysis step satisfying continuity equation and the time marching step. In this study the spectral method is applied to solve the pressure Poisson equation in the space analysis step. If the highest order differential term of the pressure Poisson equation is transformed by Fourier series, pressure arid its first derivatives can be expressed by the integral form of Fourier series. So Gibb's phenomena can be eliminated and the spectral method can be applied to non-periodic problems. The numerical analysis of unsteady viscous flow around 2-dimensional circular cylinder and wing is carried out and compared for verification.

• 한국데이터정보과학회:학술대회논문집
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• 2005.10a
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• pp.171-176
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• 2005

An infinite dam with compound Poisson inputs and a state-dependent release rate is considered. We build the Kolmogorov's backward differential equation and solve it to obtain the Laplace transforms of the first exit times for this dam.

• Journal of the Korean Wood Science and Technology
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• v.41 no.5
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• pp.425-431
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• 2013

Estimation equations of shear modulus in the plane of laminated veneer lumber (LVL) were compared each other through uniaxial tension test results. The equations - basic elastic equation in the dimensional orthotropic case, Hankinson's formula and empirical equation proposed by Salikis and Falk, were applied to determine the elastic constants at various angles to the grain, which were needed for determination of shear modulus. Tensile elastic modulus of LVL predicted from these equations were compared with test data to evaluate the accuracy of the equation. Tensile elastic modulus rapidly decreased at orientations between 0 and 15 degrees and elastic modulus at grain angles of 15, 30, and 45 degrees overestimated in the presented equations. But the proposed equation by Salikis and Falk showed better prediction, especially at 30, and 45 degrees. This proposed formula would be more useful and practical for estimating of shear modulus of wood composites like LVL to minimize the effect of Poisson's ratio term.

• Journal of the Korean Statistical Society
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• v.36 no.2
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• pp.229-235
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• 2007

We consider a ruin model whose surplus process is formed by a compound Poisson process. If the level of surplus reaches V > 0, it is assumed that a certain amount of surplus is invested. In this paper, we apply the optional sampling theorem to the surplus process and obtain the expectation of period T, time from origin to the point where the level of surplus reaches either 0 or V. We also derive the total and average amount of surplus during T by establishing a backward differential equation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.9
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• pp.2000-2006
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• 2011

In this paper, the drain induced barrier lowering(DIBL) for doping distribution in the channel has been analyzed for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing because of adventages to be able to reduce the short channel effects(SCEs) to occur in convensional MOSFET. DIBL is SCE known as reduction of threshold voltage due to variation of energy band by high drain voltage. This DIBL has been analyzed for structural parameter and variation of channel doping profile for DGMOSFET. For this object, The analytical model of Poisson equation has been derived from Gaussian doping distribution for DGMOSFET. To verify potential and DIBL models based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and DIBL for DGMOSFET has been investigated using this models.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.8
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• pp.1764-1770
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• 2011

In this paper, the subthreshold swings for doping distribution in the channel have been analyzed in double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studying since it can lessen the short channel effects(SCEs) as next -generation nano device. The degradation of subthreshold swing(SS) known as SCEs has greatly influenced on application of digital devices, and has been analyzed for structural parameter and variation of channel doping profile in DGMOSFET. The analytical model of Poisson equation has been derived from nonuniform doping distribution for DGMOSFET. To verify potential and subthreshold swing model based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing for DGMOSFET has been analyzed using these models.

• The Pure and Applied Mathematics
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• v.4 no.2
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• pp.105-110
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• 1997

The distribution of staff in a hierachial organization has been studied in a variety of forms and models. Results here show that the promotion process follows a binomial distribution with parameters n and $\alpha=e^{-pt}$ and the recruitment process follows a poisson distribution with parameter $\lambda$. Futhermore, the mean time to promotion in the grade was estimated.

• Korea-Australia Rheology Journal
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• v.15 no.2
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• pp.83-90
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• 2003

In cases of the microfluidic channel, the electrokinetic influence on the transport behavior can be found. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is applied in the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like microchannel is obtained via the Green's function. An explicit analytical expression for the induced electrokinetic potential is derived as functions of relevant physicochemical parameters. The effects of the electric double layer, the zeta potential of the solid surface, and the charge condition of the channel wall on the velocity profile as well as the electroviscous behavior are examined. With increases in either electric double layer or zeta potential, the average fluid velocity in the channel of same charge is entirely reduced, whereas the electroviscous effect becomes stronger. We observed an opposite behavior in the channel of opposite charge, where the attractive electrostatic interactions are presented.