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http://dx.doi.org/10.6109/jkiice.2011.15.8.1764

Doping Profile Dependent Subthreshold Swing for Double Gate MOSFET  

Jung, Hak-Kee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.15, no.8, 2011 , pp. 1764-1770 More about this Journal
Abstract
In this paper, the subthreshold swings for doping distribution in the channel have been analyzed in double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studying since it can lessen the short channel effects(SCEs) as next -generation nano device. The degradation of subthreshold swing(SS) known as SCEs has greatly influenced on application of digital devices, and has been analyzed for structural parameter and variation of channel doping profile in DGMOSFET. The analytical model of Poisson equation has been derived from nonuniform doping distribution for DGMOSFET. To verify potential and subthreshold swing model based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing for DGMOSFET has been analyzed using these models.
Keywords
DGMOSFET; Poisson's equation; doping distribution; potential distribution; short channel effect; subthreshold;
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Times Cited By KSCI : 1  (Citation Analysis)
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