• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.52-55
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• 2000

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.375-378
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• 2002

We investigated the reduction of etching damage by additive O$_2$ in etching gas and recovery of etching damage by O$_2$ annealing. The PZT thin films were etched using additive Ar or O$_2$ into Cl$_2$/CF$_4$ gas mixing ratio of 8/2. In order to recover ferroelectric properties of PZT thin films after etching, the etched PZT thin films were annealed at 600 C in O$_2$ atmosphere for 10 min. The remanent polarization is decreased seriously and fatigue is accelerated in the PZT sample etched in Ar/(C1$_2$+CF$_4$) plasma, whereas these characteristics are improved in O$_2$/(Cl$_2$/CF$_4$). From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Pb-O, Zr-O and Ti-O peaks are changed and the etch byproducts such as metal chloride and metal fluoride are reduced by O$_2$ annealing. From electron probe micro analyzer (EPMA) and auger electron spectroscopy(AES), O$_2$ vacancy is observed after etching. In x-ray diffraction (XRD), the structure damage in the additive O$_2$ into C1$_2$/CF$_4$ is reduced and the improvement of ferroelectric behavioral annealed sample is consistent with the increase of the (100) and (200) PZT peaks.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1550-1552
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• 1999

In this study, (Ba,Sr)$TiO_3$ thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) as a function $CF_4$/Ar gas mixing ratio. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1700{\AA}$/min under $CF_4/(CF_4+Ar)$ of 0.1, 600W/350V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the (Ba,Sr)$TiO_3$ etching. To analysis the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.169-172
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• 2009

We investigated the dry-etching mechanism of the TiN thin film using a $Cl_2$/Ar inductively coupled plasma system. To understand the effect of the $Cl_2$/Ar gas mixing ratio, we etched the TiN thin film by varying $Cl_2$/Ar gas mixing ratio. When the gas mixing ratio was 100% $Cl_2$, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.1-5
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• 2008

ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1051-1056
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• 2008

In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.848-850
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• 1999

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.1-5
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• 2013

In this paper, we investigated the etching characteristics of the TaN thin films and the surface reaction of TaN thin films after etching process. The etching characteristics of the TaN thin films were carried out using inductively coupled plasma (ICP). The etch rate and the selectivity of TaN to $SiO_2$ and TaN to PR were measured by varying the gas mixing ratio, RF power, DC-bias voltage, and process pressure in CF-based plasma. The surface reaction of TaN thin films were determined by x-ray photoelectron spectroscopy (XPS).