Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Etching Properties of ZnS:Mn Thin Films in an Inductively Coupled Plasma

  • Kim, Gwan-Ha (School of Electrical and Electronics Engineering, Chung-ang University) ;
  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-ang University) ;
  • Kim, Kyoung-Tae (School of Electrical and Electronics Engineering, Chung-ang University) ;
  • Kim, Dong-Pyo (School of Electrical and Electronics Engineering, Chung-ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-ang University)
  • Published : 2008.02.29
Download PDF
⟨ Previous Next ⟩

Abstract

ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.

Keywords

References

  1. G. J. Orloff, J. L. Elkind, and D. Koch, "Hydrogen based reactive ion etching of zinc sulfide", J. Vac. Sci. Technol. A, Vol. 10, No. 4, p. 1371, 1992 https://doi.org/10.1116/1.578255
  2. J. W. Lee, B. Pathangey, M. R. Davidson, P. H. Holloway, E. S. Lambers, A. Davydov, T. J. Anderson, and S. J. Pearton, "Comparison of plasma chemistries for dry etching of thin film electroluminescent display materials", J. Vac. Sci. Technol. A, Vol. 16, No. 3, p. 1944, 1998 https://doi.org/10.1116/1.581201
  3. S. H. Su, M. Yokoyama, and Y. K. Su, "Reactive ion etching of ZnS films for thin-film electroluminescent devices", Materials Chemistry and Physics, Vol. 50, No. 3, p. 205, 1997 https://doi.org/10.1016/S0254-0584(97)01920-2
  4. G. J. Orloff, "Optical emission spectroscopy of zinc sulfide etch", J. Vac. Sci. Technol. A, Vol. 10, No. 5, p. 3065, 1992 https://doi.org/10.1116/1.577866
  5. S. J. Pearton and R. Ren, "Plasma etching of ZnS, ZnSe, CdS, and CdTe in electron cyclotron resonance $CH_4/H_2/Ar$ and $H_2/Ar$ discharges", J. Vac. Sci. Technol. B, Vol. 11, No. 1, p. 15, 1993 https://doi.org/10.1116/1.586718
  6. G. H. Kim, K. T. Kim, D. P. Kim, C. I. Kim, C. S. Park, and K. H. Kwon, "Study on the etch characteristics of BST thin films by using inductively coupled plasma", J. Kor. Phys. Soc., Vol. 45, p. S724, 2004
  7. R. J. Shul, L. Zhang, A. G. Baca, C. G. Willison, J. Han, S. J. Pearton, F. Ren, J. C. Zolper, and L. F. Lester, "High density plasma-induced etch damage in GaN", Mater. Res. Soc. Symp. Proc., Vol. 573, p. 271, 1999
  8. K. P. Lee, K. B. Jung, A. Srivastava, D. Kumar, R. K. Singh, and S. J. Pearton, "Dry etching of $BaSrTiO_3$ and $LaNiO_3$ thin films in inductively coupled plasmas", J. Electrochem. Soc., Vol. 146, No. 10, p. 3778, 1999 https://doi.org/10.1149/1.1392549
  9. J. Ding, J. S. Jenq, G. H. Kim, H. L. Maynard, J. S. Hamers, N. Hershkowiz, and J. W. Taylor, "Etching rate characterization of $SiO_2$ and Si using ion energy flux and atomic fluorine density in a $CF_4/O_2/Ar$ electron cyclotron resonance plasma", J. Vac. Sci. Technol. A, Vol. 11, No. 4, p. 1283, 1993 https://doi.org/10.1116/1.578540
  10. F. A. Khan and I. Adesida, "High rate etching of SiC using inductively-coupled-plasma reactive ion etching in $SF_6-based$ gas mixtures", Appl. Phys. Lett., Vol. 75, No. 15, p. 2268, 1999 https://doi.org/10.1063/1.124986
  11. C. W. Chung, "Reactive ion etching of $Pb(Zr_xTi_{1-x})O_3$ thin films in an inductively coupled plasma", J. Vac. Sci. Technol. A, Vol. 16, No. 4, p. 1894, 1998 https://doi.org/10.1116/1.590104
  12. H. J. Woo, K. S. Chung, T. Lho, and R. M. Williams, "A newly calibrated laser-induced fluorescence (LIF) system for Ar ions with a single tunable diode laser", J. Kor. Phys. Soc., Vol. 48, No. 2, p. 260, 2006
  13. K. N. Kim and G. Y. Yeom, "Characteristics of a large-area plasma source using internal multiple U-type antenna", J. Kor. Phys. Soc., Vol. 48, No. 2, p. 256, 2006
  14. D. P. Kim, C. I. Kim, and K. H. Kwon, "Etching properties of ZnS thin films in $Cl_2/CF_4/Ar$ plasma", Thin Solid Films, Vol. 459, No. 1-2, p. 131, 2004 https://doi.org/10.1016/j.tsf.2003.12.128