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http://dx.doi.org/10.4313/TEEM.2008.9.1.001

Etching Properties of ZnS:Mn Thin Films in an Inductively Coupled Plasma  

Kim, Gwan-Ha (School of Electrical and Electronics Engineering, Chung-ang University)
Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-ang University)
Kim, Kyoung-Tae (School of Electrical and Electronics Engineering, Chung-ang University)
Kim, Dong-Pyo (School of Electrical and Electronics Engineering, Chung-ang University)
Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-ang University)
Publication Information
Transactions on Electrical and Electronic Materials / v.9, no.1, 2008 , pp. 1-5 More about this Journal
Abstract
ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.
Keywords
Zinc sulfide; Etching; Electroluminescence device; Inductively coupled plasma;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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1 D. P. Kim, C. I. Kim, and K. H. Kwon, "Etching properties of ZnS thin films in $Cl_2/CF_4/Ar$ plasma", Thin Solid Films, Vol. 459, No. 1-2, p. 131, 2004   DOI   ScienceOn
2 K. N. Kim and G. Y. Yeom, "Characteristics of a large-area plasma source using internal multiple U-type antenna", J. Kor. Phys. Soc., Vol. 48, No. 2, p. 256, 2006
3 J. W. Lee, B. Pathangey, M. R. Davidson, P. H. Holloway, E. S. Lambers, A. Davydov, T. J. Anderson, and S. J. Pearton, "Comparison of plasma chemistries for dry etching of thin film electroluminescent display materials", J. Vac. Sci. Technol. A, Vol. 16, No. 3, p. 1944, 1998   DOI   ScienceOn
4 G. J. Orloff, J. L. Elkind, and D. Koch, "Hydrogen based reactive ion etching of zinc sulfide", J. Vac. Sci. Technol. A, Vol. 10, No. 4, p. 1371, 1992   DOI
5 S. J. Pearton and R. Ren, "Plasma etching of ZnS, ZnSe, CdS, and CdTe in electron cyclotron resonance $CH_4/H_2/Ar$ and $H_2/Ar$ discharges", J. Vac. Sci. Technol. B, Vol. 11, No. 1, p. 15, 1993   DOI   ScienceOn
6 K. P. Lee, K. B. Jung, A. Srivastava, D. Kumar, R. K. Singh, and S. J. Pearton, "Dry etching of $BaSrTiO_3$ and $LaNiO_3$ thin films in inductively coupled plasmas", J. Electrochem. Soc., Vol. 146, No. 10, p. 3778, 1999   DOI
7 G. H. Kim, K. T. Kim, D. P. Kim, C. I. Kim, C. S. Park, and K. H. Kwon, "Study on the etch characteristics of BST thin films by using inductively coupled plasma", J. Kor. Phys. Soc., Vol. 45, p. S724, 2004
8 R. J. Shul, L. Zhang, A. G. Baca, C. G. Willison, J. Han, S. J. Pearton, F. Ren, J. C. Zolper, and L. F. Lester, "High density plasma-induced etch damage in GaN", Mater. Res. Soc. Symp. Proc., Vol. 573, p. 271, 1999
9 G. J. Orloff, "Optical emission spectroscopy of zinc sulfide etch", J. Vac. Sci. Technol. A, Vol. 10, No. 5, p. 3065, 1992   DOI
10 J. Ding, J. S. Jenq, G. H. Kim, H. L. Maynard, J. S. Hamers, N. Hershkowiz, and J. W. Taylor, "Etching rate characterization of $SiO_2$ and Si using ion energy flux and atomic fluorine density in a $CF_4/O_2/Ar$ electron cyclotron resonance plasma", J. Vac. Sci. Technol. A, Vol. 11, No. 4, p. 1283, 1993   DOI   ScienceOn
11 F. A. Khan and I. Adesida, "High rate etching of SiC using inductively-coupled-plasma reactive ion etching in $SF_6-based$ gas mixtures", Appl. Phys. Lett., Vol. 75, No. 15, p. 2268, 1999   DOI
12 C. W. Chung, "Reactive ion etching of $Pb(Zr_xTi_{1-x})O_3$ thin films in an inductively coupled plasma", J. Vac. Sci. Technol. A, Vol. 16, No. 4, p. 1894, 1998   DOI   ScienceOn
13 H. J. Woo, K. S. Chung, T. Lho, and R. M. Williams, "A newly calibrated laser-induced fluorescence (LIF) system for Ar ions with a single tunable diode laser", J. Kor. Phys. Soc., Vol. 48, No. 2, p. 260, 2006
14 S. H. Su, M. Yokoyama, and Y. K. Su, "Reactive ion etching of ZnS films for thin-film electroluminescent devices", Materials Chemistry and Physics, Vol. 50, No. 3, p. 205, 1997   DOI   ScienceOn