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http://dx.doi.org/10.5695/JKISE.2009.42.4.169

Dry Etch Characteristics of TiN Thin Film for Metal Gate Electrode  

Um, Doo-Seung (School of Electrical and Electronics Engineering, Chung-Ang University)
Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University)
Park, Jung-Soo (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
Publication Information
Journal of the Korean institute of surface engineering / v.42, no.4, 2009 , pp. 169-172 More about this Journal
Abstract
We investigated the dry-etching mechanism of the TiN thin film using a $Cl_2$/Ar inductively coupled plasma system. To understand the effect of the $Cl_2$/Ar gas mixing ratio, we etched the TiN thin film by varying $Cl_2$/Ar gas mixing ratio. When the gas mixing ratio was 100% $Cl_2$, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.
Keywords
Etching; TiN; Plasma; ICP; $Cl_2$/Ar;
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