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http://dx.doi.org/10.4313/JKEM.2008.21.12.1051

Etch Characteristics of TiN Thin Film with Addition Cl2 Gas in BCl3/Ar Plasma  

Um, Doo-Seung (중앙대학교 전자전기공학부)
Woo, Jong-Chang (중앙대학교 전자전기공학부)
Kim, Dong-Pyo (중앙대학교 전자전기공학부)
Kim, Chang-Il (중앙대학교 전자전기공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.12, 2008 , pp. 1051-1056 More about this Journal
Abstract
In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).
Keywords
Etching; TiN; Plasma; ICP; $BCl_3$/Ar; $Cl_2$;
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1 M. Y. Kwak, D. H. Shin, T. W. Kang, and K. N. Kim, "Characteristics of TiN barrier layer against Cu diffusion", Thin Solid Films, Vol. 339, p. 290, 1999   DOI   ScienceOn
2 F. Cerio, J. Drewery, E. Huang, and G. Reynolds, "Film properties of Ti/TiN bilayers deposited sequentially by ionized physical vaper deposition", J. Vac. Sci. Technol. A, Vol. 16, No. 3, p. 1863, 1998   DOI   ScienceOn
3 M. H. Shin, S. W. Na, N. E. Lee, and J. H. Ahn, "Etching characteristics of Ta and TaN using $Cl_{2}/Ar$ inductively coupled plasma", Thin Solid Films, Vol. 506-507, p. 230, 2006   DOI   ScienceOn
4 S. M. Koo, D. P. Kim, K. T. Kim, and C. I. Kim, "The etching properties of $Al_{2}O_{3}$ thin films in $N_{2}/Cl_{2}/BCl_{3} and Ar/Cl_{2}/BCl_{3}$ gas chemistry", Materials Science and Engineering B, Vol. 118, p. 201, 2005   DOI   ScienceOn
5 I. K. Baek, W. T. Lim, J. W. Lee, M. H. Jeon, and G. S. Cho, "Comparison of dry etching of AlGaAs and InGaP in a planar inductively coupled $BCl_{3}$ plasma", J. Vac. Sci. Technol. B, Vol. 21, No. 6, p. 2487, 2003   DOI   ScienceOn
6 S.-U. Shin, C.-I. Kim, and E.-G. Chang, "The study of etching characteristic in $SrBi_{2}Ta_{2}O_{9}$ thin film by optical emission spectroscopy", J. of KIEEME(in Korean), Vol. 14. No. 3, p. 185, 2001
7 Y. Kawabata, J. Taniguchi, and I. Miyamoto, "XPS studies on damage evaluation of single-crystal diamond chips processed with ion beam etching and reactive ion beam assisted chemical etching", Diamond and Related Materials, Vol. 13, p. 93, 2004   DOI   ScienceOn
8 A. Pastol and Y. Catherine, "Optical emission spectroscopy for diagnostic and monitoring of $CH_{4}$ plasmas used for a-C:H deposition", J. Phys. D: Appl. Phys., Vol. 23, p. 799, 1990   DOI   ScienceOn
9 W. S. Hwang, J. Chen, W. J. Yoo, and V. Bliznetsov, "Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma", J. Vac. Sci. Technol. A, Vol. 23, No. 4, p. 964, 2005   DOI   ScienceOn
10 I. M. Dharmadasa, M. Ives, J. S. Brooks, G. H. France, and S. J. Brown, "Application of glow discharge optical emission spectroscopy to study semiconductors and semiconductor devices", Semicond. Sci. Technol., Vol. 10, p. 369, 1995   DOI   ScienceOn
11 A. L. Gouil, O. Joubert, G. Cunge, T. Chevolleau, L. Vallier, B. Chenevier, and I. Matko, "Poly-Si/$TiN/HfO_{2}$ gate stack etching in high-density plasmas", J. Vac. Sci. Technol. B, Vol. 25, No. 3, p. 767, 2007   DOI   ScienceOn
12 M. H. Shin, M. S. Park, N. E. Lee, J. Y. Kim, C. Y. Kim, and J. H. Ahn, "Dry etching of $TaN/HfO_{2}$ gate-stack structure in $BCl_{3}/Ar/O_{2}$ inductively coupled plasmas", J. Vac. Sci. Technol. A, Vol. 24, No. 4, p. 1373, 2006   DOI   ScienceOn
13 C. Q. Jiao, R. Nagpal, and P. Haaland, "Ion chemistry in boron trichloride $BCl_{3}$", Chemical Physics Letter, Vol. 265, p. 239, 1997   DOI   ScienceOn
14 G. Franz, "High-rate etching of GaAs using chlorine atmospheres doped with a Lewis acid", J. Vac. Sci. Technol. A, Vol. 16, No. 3, p. 1542, 1998   DOI   ScienceOn
15 J. W. Lee, Y. T. Lim, I. K. Baek, S. Y. Yoo, G. S. Cho, M. H. Jeon, J. Y. Leem, and S. J. Pearton, "Comparison of planar inductively coupled plasma etching of GaAs in $BCl_{3}/Ar$, and $BCl_{3}/Ne$", Applied Surface Science, Vol. 233, p. 402, 2004   DOI   ScienceOn
16 G. H. Kim, C. I. Kim, and Alexander M. Efremov, "Effect of gas mixing ratio on MgO etch behaviour in inductively coupled $BCl_{3}$/Ar plasma", Vacuum, Vol. 79, p. 231, 2005   DOI   ScienceOn
17 G. H. Kim. K. T. Kim, D. P. Kim, and C. I. Kim, "Plasma etching of (Ba,Sr)$TiO_{3}$ thin films using inductively coupled $Cl_{2}$/Ar and $BCl_{3}/Cl_{2}$/Ar plasma", Thin Solid Films, Vol. 475, p. 86, 2005   DOI   ScienceOn
18 Y. J. Lee, C. H. Jeong, J. W. Bae, I. K. You, J. W. Park, and G. Y. Yeom, "Etch characteristics of $SrBi_{2}Ta_{2}O_{9}$ (SBT) thin films using magnetized inductively coupled plasmas", Thin Solid Films, Vol. 398-399, p. 652, 2001   DOI   ScienceOn
19 J. Tonotani, T. Iwamoto, F. Sato, K. Hattori, S. Ohmi, and H. Iwai, "Dry etching characteristics of TiN film using $Ar/CHF_{3}, Ar/Cl_{2}, and Ar/BCl_{3}$ gas chemistries in an inductively coupled plasma", J. Vac. Sci. Technol. B, Vol. 21, No. 5, p. 2163, 2003   DOI   ScienceOn