• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.78-85
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• 1995

We fabricated the Pb$_{1-0.28{\alpha}}La_{0.28}TiO_{3}$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Its electrical properties were measured from the planar capacitors fabricated on the Pt/Ti/SiO$_{2}$/Si substrate. By the P-E hysteresis measurement, its paraelectric phase was identified and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}A/cm^{2}$, respectively. Those electrical values indicate that the PLT(28) thin film is the most successful candidate for the capacitor dielectrics of ULSI DRAMs at the present.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.341-345
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• 2001

In this study, nano-sized powders of $Si0_2-0^{\sim}15mol%B_2O_3$ composition were prepared by sol-gel processing method using TEOS(Tetra ethyl ortho silicate) and $H_3BO_3$ solution. The powders were tape-cast on High silicate glass sheet(HSG) substrate and sintered to form a layer of undercladding for the planar light wave module, During the sol-gel processing, $H_2O/Si$ mole ratio were varied to modify the size of the powders in a range from 600 to 75nm. The dispersion of the powder was modified by changing the pH of the slurry. Sintering temperature of the tape was observed to decrease with the size of the powder and the $B_2O_3$ content in the powder. When the silica powders of 75-125nm in diameter containing 15mol% $B_2O_3$ were used, 98 TD% was obtained at $1250^{\circ}C$, which is approximately $300^{\circ}C$ reduction in sintering temperature compared with micrometer-sized powders.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.848-850
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• 1999

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• Journal of electromagnetic engineering and science
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• v.17 no.1
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• pp.44-49
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• 2017

A compact planar microstrip-fed ultra-wideband (UWB) antenna with a dual band-notched for UWB application is presented and analyzed. By inserting a U-shaped slot and inverted U-shaped slot into the pot-shaped radiator, two notched bands are achieved. By optimizing the width and length of the U-shaped slots and inverted U-shaped slot, a desired bandwidth of voltage standing wave ratio (VSWR) less than 2.0 can be achieved, ranging from UWB bands with notched dual bands. The proposed antenna is fabricated on an inexpensive FR-4 substrate with overall dimensions of $28.0mm{\times}39.5mm$. The measured results confirm that the proposed antenna covers from 1.775 to over 13.075 GHz with two rejection bands of around 3.325-3.925 GHz and 5.3125-6.025 GHz. In addition, the proposed antenna showed good radiation characteristics and gains in the UWB bands.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.34-39
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• 2014

This paper discusses the 3-level charge pumping (CP) method in planar-type Silicon-Oxide-High-k-Oxide-Silicon (SOHOS) and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) devices to find out the reason of the degradation of data retention properties. In the CP technique, pulses are applied to the gate of the MOSFET which alternately fill the traps with electrons and holes, thereby causing a recombination current Icp to flow in the substrate. The 3-level charge pumping method may be used to determine not only interface trap densities but also capture cross sections as a function of trap energy. By applying this method, SOHOS device found to have a higher interface trap density than SONOS device. Therefore, degradation of data retention characteristics is attributed to the many interface trap sites.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.593-599
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• 2003

The nanoparticle magnetite of which diameter was about 3 nm was synthesized in a homogeneous aqueous solution without a template. The synthesized magnetite nanoparticle was easily oxidized to maghemite in an ambient condition. The magnetic properties of the ferrite nanoparticle show superparamagnetism at room temperature and its blocking temperature is around 93 K. Modifying the sequential adsorption method of metal bisphosphonate, we have prepared a multilayer thin film of the ferrite nanoparticle on planar substrates such as glass, quartz and Si wafer. In this multilayer the ferrite nanoparticle layer and an alkylbisphosphonate layer are alternately placed on the substrates by simple immersion in the solutions of the ferrite nanoparticle and 1, 10-decanediylbis (phosphonic acid) (DBPA), alternately. This is the first example, as far as we know, of nanoparticle/alkyl-bisphosphonate multilayer which is an analogy of metal bisphosphonate multilayer. UV-visible absorption and infrared reflection-absorption studies show that the growth of each layer is very systematic and the film is considerably optically transparent to visible light of 400-700 nm. Atomic force microscopic images of the film show that the surface morphology of the film follows that of the substrate in μm-scale image and the nanoparticle-terminated surface is differentiated from the DBPA-terminated one in nm-scale image. The magnetic properties of this ferrite/DBPA thin film are almost the same as those of the ferrite nanoparticle powder only.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.341-345
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• 2001

In this study, nano-sized powders of SiO$_2$-0∼15mo1%B$_2$O$_3$ composition were prepared by sol-gel processing method using TEOS(Tetra ethyl ortho silicate) and H$_3$BO$_3$ solution. The powders were tape-cast on High silicate glass sheet(HSG) substrate and sintered to form a layer of undercladding for the planar light wave module. During the sol-gel processing, H$_2$O/Si mole ratio were varied to modify the size of the powders in a range from 600 to 75nm. The dispersion of the powder was modified by changing the pH of the slurry. Sintering temperature of the tape was observed to decrease with the size of the powder and the B$_2$O$_3$ content in the powder. When the silica powders of 75∼125nm in diameter containing 15mo1% B$_2$O$_3$ were used, 98 TD% was obtained at 1250$^{\circ}C$, which is approximately 300$^{\circ}C$ reduction in sintering temperature compared with micrometer-sized powders.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.1
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• pp.114-122
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• 2014

This paper describes a study of the design conditions of a planar surface dielectric barrier discharge (DBD) reactors for generating negative air ions. The capacity of negative air ion generated by the surface DBD reactor is affected by the shape, area ratio and the location of the discharge and induction electrodes of it. To study the optimal design conditions of DBD reactors, the electrodes printed on the substrate of a PCB board is utilized to conduct kind of experiments: the distance of the each electrode along with the X-Y axis, the area ratio of the discharge electrode to induction electrode, and the symmetrical and asymmetrical location of two electrodes. The ion generation capacity is inverse proportional to the gap increases along with X-Y axis. And the optimum ion concentration generated by the ionizer was inspected when the electrodes area ratio was 3 and 5 times of the symmetrical and asymmetrical experimental condition respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.3
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• pp.891-895
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• 2010

A dual-band (UHF: 470-862 MHz, L: 1452-1492 MHz) digital video broadcasting-handheld (DVB-H) antenna is presented. The proposed antenna is composed of a planar inverted F-shape antenna (PIFA) with an input impedance matching circuit. The matching circuit improves antenna performance in the broad UHF bands (470-862 MHz: 63%). The proposed antenna has omni-directional patterns and sufficient gain (Ave. peak gain is about 1.70 dBi over 470-862 MHz) for the PMP applications. The antenna is contact with a PMP case (${\varepsilon}_r=3.2$) which is used as a substrate for the size reduction and compact design.