• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.374-374
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• 2012

Nowadays, Active Matrix Organic Light-Emitting Diodes (AM-OLEDs) are the superior display device due to their vivid full color, perfect video capability, light weight, low driving power, and potential flexibility. One of the advantages of AM-OLED over Liquid Crystal Display (LCD) lies in its flexibility. The potential flexibility of AM-OLED is not fully explored due to its sensitivity to moisture and oxygen which are readily present in atmosphere, and there are no flexible encapsulation layers available to protect these. Therefore, we come up with a new concept of Inorganic-Organic hybrid thin film as the encapsulation layer. Our Inorganic layer is Al2O3 and Organic layer is F-Alucone. We deposited these layers in vacuum state using Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) techniques. We found the results are comparable to commercial requirement of 10-6 g/m2 day for Water Vapor Transmission Rate (WVTR). Using ALD and MLD, we can control the exact thin film thickness and fabricate more dense films than chemical or physical vapor deposition methods. Moreover, this hybrid encapsulation layer potentially has both the flexibility of organic layers and superior protection properties of inorganic layer.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.91-94
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• 2002

Textured Ce$O_{2}$ buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition The texture of deposited Ce$O_{2}$ films was varied with deposition temperature(T) and oxygen partial pressure($Po_{2}$). ($\ell$ 00) textured Ce$O_{2}$ films were deposited at T= 500~$520^{\circ}C$, $Po_{2}$= 0.90~3.33 Torr. The growth rate of the Ce$O_{2}$ films was 150~200 nm/min at T= $520^{\circ}C$ and $Po_{2}$= 2.30 Torr, which was much faster than that prepated by other physical deposition method.

• 한국생산제조학회지
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• 제9권2호
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• pp.87-95
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• 2000

By using AIP(Arc Ion Plating) of a physical vapor deposition for the first time in Korea a ceramic tool whose surface is coated single layeredly with TiN is developed. In addition cutting resistance appearing in the process of finishing cut of hardened carbon tool steel STC3 is studied. The principal and radial components of cutting resistance in those cutting conditions appear to be the same or similar and the feed component is relatively small. The feed component is found to be in proportion to cutting width and the radial component in proportion to cutting thickness. Owing to coating the cutting resistance of a TiN coated ceramic tool increas-es compared with that of a general ceramic tool.

• 한국표면공학회지
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• 제39권4호
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• pp.147-152
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• 2006

Failure mechanisms of electron beam physical vapor deposited thermal barrier coatings(EB-PVD TBCs) that occur during thermal cyclic oxidation were investigated. The investigations include microstructural degradation of NiCrAIY bond coat, thermally grown oxides(TGOs) along the ceramic top coat-substrate interface and fracture path within TBCs. The microstructural degradation of the bond coat during cyclic oxidation created Al depleted zones, resulting in reduction of NiAl and ${\gamma}$-Ni solid solution phase. It was observed that the fracture took placed primarily within the TGOs or at the interfaces between TGOs and bond coat.

• 한국세라믹학회지
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• 제42권2호
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• pp.117-122
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• 2005

나노 코팅 기술로써 빠른 증착 속도와 미세구조 제어가 용이하여 항공기 엔진 부품 열차폐 코팅으로 널리 이용되는 Electron Beam Physical Vapor Deposition (EB-PVD)세라믹 코팅 기술을 연료전지 전해질 제조에 적용하였다. EB-PVD 법을 이용하여 NiO-YSZ 기판에 YSZ 전해질을 약 10$\mu$m의 두께로 짧은 시간에 코팅하였으며 증착온도에 따라 나노 구조의 표면을 가진 YSZ 막을 얻을 수 있었다. 연료전지 전해질로서의 특성을 평가하기 위하여, 같은 조건의 코팅으로 $Al_{2}O_3$기판에 전해질을 동일한 조건으로 코팅하여 전해질의 전기적 특성을 평가하였다. 또한 양극물질로서 $LaSrCoO_3$ 분말을 일반적인 스크린 프린팅 기법으로 코팅하여 EB-PVD의 코팅을 이용한 고체산화물 연료전지 제조 가능성에 대하여 논의하였다

• 한국세라믹학회지
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• 제54권6호
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• pp.511-517
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• 2017

With different working pressures and substrate biases, Cr-Al-N coatings were deposited by hybrid physical vapor deposition (PVD) method, consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) processes. Cr and Al targets were used for the arc ion plating and the sputtering process, respectively. Phase analysis, and composition, binding energy, and microstructural analyses were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM), respectively. Surface droplet size of Cr-Al-N coatings was found to decrease with increasing substrate bias. A decrease of the deposition rate of Cr-Al-N films was expected due to the increase of substrate bias. The coatings were grown with textured CrN phase and (111), (200), and (220) planes. X-ray diffraction data show that all Cr-Al-N coatings shifted to lower diffraction angles due to the addition of Al. The XPS results were used to determine the $Cr_2N$, CrN, and (Cr,Al)N binding energies. The compositions of the Cr-Al-N films were measured by XPS to be Cr 23.2~36.9 at%, Al 30.1~40.3 at%, and N 31.3~38.6 at%.

• Elastomers and Composites
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• 제45권4호
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• pp.298-308
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• 2010

패럴린 박막의 기계적 성질과 표면 특성을 개선하기 위해 Xylydene계 다이머(DPX-C, DPX-D, DPX-N)를 사용하여 각각의 다이머에 대한 증착 조건과 투입량에 따른 박막의 두께를 조절함으로써 단일 패럴린-C, D, N 박막과 두 가지 타입이 혼합된 하이브리드 타입의 화학적, 물리적 패럴린 박막을 제조하였다. 패럴린 증착은 화학기상증착법(chemical vapor deposition: CVD)을 이용하였으며, 열분석을 통해 단일 박막과 하이브리드 타입의 박막에 대한 열적 특성을 비교 분석하였다. 인장 강도와 신장율 그리고 인열력 시험을 통해 박막에 대한 기계적 물성을 알아보았으며, 접촉각과 표면 에너지를 측정하여 박막에 대한 표면 특성을 관찰하였다. 두 가지 타입이 혼합된 하이브리드 타입의 화학적 패럴린 박막은 서로 다른 다이머의 장단점을 상호 보완시켜 줄 수 있으며, 물리적 패럴린 박막은 기재에 코팅되는 면과 반대 면의 박막 특성을 자유롭게 조절할 수 있다.

• 한국진공학회지
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• 제18권3호
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• pp.221-228
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• 2009

본 논문의 목적은 진공증착법을 이용한 $\beta$-PVDF($\beta$-Polyvinylidene fluoride) 유기 박막의 제조와 제조된 유기 박막의 초음파 응답 특성을 연구하는데 있다. 진공 증착은 증발원 온도 $270^{\circ}C$, 인가 전계 142.4kV/cm, 진공도 $2.0{\times}10^{-5}Torr$에서 실시하였다. 기판온도의 증가에 따라서 결정화도는 47%에서 67.8%로 증가함을 알 수 있었다. 초음파 응답특성에서 거리를 1cm에서 100cm로 변화시켰을 경우, 출력전압은 0.615V에서 0.4V로 감소하였다.

• 한국진공학회지
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• 제21권2호
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• pp.113-119
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• 2012

탄소나노튜브는 1차원의 구조에 기인하는 우수한 물리적, 전기적 특성으로 인해 다양한 분야에 응용 가능한 물질로 각광받고 있다. 특히, 수직 정렬된 단일벽 탄소나노튜브의 합성은 향상된 특성들을 기대할 수 있으며 다양한 분야로 활용가능하다. 본 연구에서는 열 화학기상증착법을 이용하여 합성과정에서 촉매층의 두께, 아세틸렌 가스의 주입량, 합성온도의 변화가 탄소나 노튜브의 길이와 직경에 미치는 영향을 조사하였다. 또한 위와 같은 조건에서의 촉매의 구조변화에 초점을 두어 이러한 현상을 이해하고자 하였다. 이러한 결과를 바탕으로 합성조건을 최적화하여 수백 ${\mu}m$ 길이의 결정성이 우수한 수직 정렬된 단일벽 탄소나노튜브를 합성하였다.