• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.374-374
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• 2012

Nowadays, Active Matrix Organic Light-Emitting Diodes (AM-OLEDs) are the superior display device due to their vivid full color, perfect video capability, light weight, low driving power, and potential flexibility. One of the advantages of AM-OLED over Liquid Crystal Display (LCD) lies in its flexibility. The potential flexibility of AM-OLED is not fully explored due to its sensitivity to moisture and oxygen which are readily present in atmosphere, and there are no flexible encapsulation layers available to protect these. Therefore, we come up with a new concept of Inorganic-Organic hybrid thin film as the encapsulation layer. Our Inorganic layer is Al2O3 and Organic layer is F-Alucone. We deposited these layers in vacuum state using Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) techniques. We found the results are comparable to commercial requirement of 10-6 g/m2 day for Water Vapor Transmission Rate (WVTR). Using ALD and MLD, we can control the exact thin film thickness and fabricate more dense films than chemical or physical vapor deposition methods. Moreover, this hybrid encapsulation layer potentially has both the flexibility of organic layers and superior protection properties of inorganic layer.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.91-94
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• 2002

Textured Ce$O_{2}$ buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition The texture of deposited Ce$O_{2}$ films was varied with deposition temperature(T) and oxygen partial pressure($Po_{2}$). ($\ell$ 00) textured Ce$O_{2}$ films were deposited at T= 500~$520^{\circ}C$, $Po_{2}$= 0.90~3.33 Torr. The growth rate of the Ce$O_{2}$ films was 150~200 nm/min at T= $520^{\circ}C$ and $Po_{2}$= 2.30 Torr, which was much faster than that prepated by other physical deposition method.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.9 no.2
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• pp.87-95
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• 2000

By using AIP(Arc Ion Plating) of a physical vapor deposition for the first time in Korea a ceramic tool whose surface is coated single layeredly with TiN is developed. In addition cutting resistance appearing in the process of finishing cut of hardened carbon tool steel STC3 is studied. The principal and radial components of cutting resistance in those cutting conditions appear to be the same or similar and the feed component is relatively small. The feed component is found to be in proportion to cutting width and the radial component in proportion to cutting thickness. Owing to coating the cutting resistance of a TiN coated ceramic tool increas-es compared with that of a general ceramic tool.

• Journal of the Korean institute of surface engineering
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• v.39 no.4
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• pp.147-152
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• 2006

Failure mechanisms of electron beam physical vapor deposited thermal barrier coatings(EB-PVD TBCs) that occur during thermal cyclic oxidation were investigated. The investigations include microstructural degradation of NiCrAIY bond coat, thermally grown oxides(TGOs) along the ceramic top coat-substrate interface and fracture path within TBCs. The microstructural degradation of the bond coat during cyclic oxidation created Al depleted zones, resulting in reduction of NiAl and ${\gamma}$-Ni solid solution phase. It was observed that the fracture took placed primarily within the TGOs or at the interfaces between TGOs and bond coat.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.117-122
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• 2005

Electron Beam Physical Vapor Deposition (EB-PVD) is a typical technology for thermal barrier coating with Yttria Stabilized Zirconia (YSZ) on aero gas turbine engine. In this study EB-PVD method was used to fabricate dense YSZ film on NiO-YSZ as a electrolyte of Solid Oxide Fuel Cell (SOFC). Dense YSZ films of -10 $\mu$m thickness showed nano surface structure depending on deposition temperature. Electrical conductivities of YSZ film and electric power density of the single cell were evaluated after screen- printing $LaSrCoO_3$ as a cathode.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.511-517
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• 2017

With different working pressures and substrate biases, Cr-Al-N coatings were deposited by hybrid physical vapor deposition (PVD) method, consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) processes. Cr and Al targets were used for the arc ion plating and the sputtering process, respectively. Phase analysis, and composition, binding energy, and microstructural analyses were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM), respectively. Surface droplet size of Cr-Al-N coatings was found to decrease with increasing substrate bias. A decrease of the deposition rate of Cr-Al-N films was expected due to the increase of substrate bias. The coatings were grown with textured CrN phase and (111), (200), and (220) planes. X-ray diffraction data show that all Cr-Al-N coatings shifted to lower diffraction angles due to the addition of Al. The XPS results were used to determine the $Cr_2N$, CrN, and (Cr,Al)N binding energies. The compositions of the Cr-Al-N films were measured by XPS to be Cr 23.2~36.9 at%, Al 30.1~40.3 at%, and N 31.3~38.6 at%.

• Elastomers and Composites
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• v.45 no.4
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• pp.298-308
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• 2010

The mechanical properties and surface characteristics of parylene thin film were improved using Xylydene-based dimers (DPX-C, DPX-D, and DPX-N). A single-parylene-C, D, N film and a hybrid chemical and physical parylene thin films in which two types are mixed were manufactured for each dimer by adjusting the deposition conditions and the thickness of the thin film by input. Parylene was deposited by chemical vapor deposition (CVD) and the thermal characteristics of the single thin film and the hybrid thin film were compared by thermal analysis. The mechanical properties of the thin films were characterized by tensile strength, elongation, and tear force tests, and the surface characteristics of the thin films were evaluated by contact angle and surface energy measurements. The hybrid chemical parylene thin film in which two types are mixed can complement the strengths and weaknesses of the different dimers, while the physical parylene thin film can freely adjust the thin film characteristics of the coated surface and the opposite surface.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.221-228
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• 2009

The purpose of this paper is to discuss the fabrication of $\beta$-PVDF($\beta$-Polyvinylidene fluoride, $\beta$-PVF2) organic thin films through the vapor deposition method and to investigate the ultrasonic response properties of the organic thin films produced. Vapor deposition was performed under the following conditions : the temperature of evaporator, the applied electric field and the pressure of reaction chamber were $270^{\circ}C$, 142.4 kV/cm and $2.0{\times}10^{-5}\;Torr$, respectively. The results showed that the degree of crystallinity increased from 47% to 67.8% with an increase in the substrate temperature. In the case of a sensor response characteristic by varying the distance from 1cm to 100cm, the output voltage decreased from 0.615V to 0.4V.

• Journal of the Korean Vacuum Society
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• v.21 no.2
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• pp.113-119
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• 2012

Carbon nanotubes have emerged as a promising material for multifaceted applications, such as composited nanofiber, field effect transistors, field emitters, gas sensors due to their extraordinary electrical and physical properties. In particular, synthesis of vertically aligned carbon nanotubes with a high aspect ratio has recently attracted attention for many applications. However, mass production of high-quality single-walled carbon nanotubes is still remain elusive. In this study, an effect of chemical vapor deposition conditions, including catalyst thickness, feedstock flow rate, and growth temperature, on synthesis of carbon nanotube was systematically investigated.