• 제목/요약/키워드: Phase Change Material

검색결과 766건 처리시간 0.041초

하부전극에 따른 상변화 메모리 셀의 전기 및 발열 특성 (The Electrical and Thermal Properties of Phase Change Memory Cell with Bottom Electrode)

  • 장낙원;김홍승;이준기;김도형;마석범
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.103-104
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    • 2006
  • PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the reset current and temperature profile of PRAM cells with bottom electrode were calculated by the numerical method.

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미립 피복 상변화 물질의 상변화 온도에 대한 연구 (Phase-change Temperature of Micro-encapsulated Phase-change Material)

  • 최은수
    • 설비공학논문집
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    • 제14권2호
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    • pp.168-174
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    • 2002
  • In order to obtain a new heat transfer fluid having a high thermal capacity, micro-capsules of a phase-change material can be a successful candidate to be added into water. In this study, 25, 50, 100, and $200\mu$m diameter micro-encapsulated Lauric acids were tested by a differential scanning calorimeter. The Lauric acid itself had a single freezing curve, but the micro-encapsulated Lauric acid had double freezing curves. The second freezing dominated for $25\mu$m diameter Lauric acids. But the first freeing energy became big as the size of the capsule increased.

상변화 물질의 용융과정에 있어서 좌표변환을 이용한 온도분포의 해석적 연구 (The finite difference analysis on temperature distribution by coordinate transformation during melting process of phase-change Material)

  • 김준근;임장순
    • 태양에너지
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    • 제5권2호
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    • pp.77-83
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    • 1985
  • An analysis is performed to investigate the influence of the buoyancy force and the thickness variation of melting layer in the containment that is filled with phase-change Material surrounding a cylindrical heating tube during melting process. The phase-change material is assumed to be initially solid at its phase-change temperature and the remaining solid at any given time is still at the phase-change temperature and neglecting the effect of heat transfer occuring within the solid. At the start of melting process, the thickness of melting layer is assumed to be a stefan-problem and after the starting process, the change of temperature and velocity is calculated using a two dimensional finite difference method. The governing equations for velocity and temperature are solved by a finite difference method which used SIMPLE (Semi Implicit Method Pressure linked Equations) algorithm. Results are presented for a wide range of Granshof number and in accordance with the time increment and it is founded that two dimensional fluid flow occurred by natural convection decreases the velocity of melting process at the bottom of container. The larger the radius of heating tube, the higher heat transfer is occurred in the melting layer.

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Design Method of Tunable Pixel with Phase-Change Material for Diffractive Optical Elements

  • Lee, Seung-Yeol;Kim, Han Na;Kim, Yong Hae;Kim, Tae-Youb;Cho, Seong-Mok;Kang, Han Byeol;Hwang, Chi-Sun
    • ETRI Journal
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    • 제39권3호
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    • pp.390-397
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    • 2017
  • In this paper, we propose a scheme for designing a tunable pixel layer based on a $Ge_2Sb_2Te_5$ (GST) alloy thin film. We show that the phase change of GST can significantly affect the reflection characteristic when the GST film is embedded into a dielectric encapsulation layer. We investigate the appropriate positions of the GST film within the dielectric layer for high diffraction efficiency, and we prove that they are antinodes of Fabry-Perot resonance inside the dielectric layer. Using the proposed scheme, we can increase the diffraction efficiency by about ten times compared to a bare GST film pixel, and 80 times for the first-to-zeroth-order diffraction power ratio. We show that the proposed scheme can be designed alternatively for a broadband or wavelength-selective type by tuning the dielectric thickness, and we discuss a multi-phase example with a double-stack structure.

초음파 진동이 상변화 열전달에 미치는 영향에 관한 실험적 연구 (An Experimental Study of the effect of Ultrasonic Vibration on Phase Change Heat Transfer)

  • 박설현;서동표;차경옥;오율권
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2000년도 추계학술대회논문집B
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    • pp.297-303
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    • 2000
  • Natural convection heat transfer have been paid attention because it can be applied to various areas such as cooling of nuclear reactor, heat storing system and so on. Among such applications, the melting process of phase change material(PCM) has been actively studied. However most researches have focused on phase change heat transfer in natural melting. Therefore, In this paper, ultrasonic vibration was adopted to increase the melting rate. In addition, general relationship and corelationship between melting with ultrasonic vibration and melting without ultrasonic vibration have been established during the melting of PCM.

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A Study on the Thermal, Electrical Characteristics of Ge-Se-Te Chalcogenide Material for Use in Phase Change Memory

  • Nam, Ki-Hyun;Chung, Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • 제9권6호
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    • pp.223-226
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    • 2008
  • $Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

상변화물질을 이용한 잠열축열조에 관한 기초 연구 - 수평원관내에서의 내향용융 및 응고열전달 실험 - (A Study of Heat Storage System with Phase Change Material - Inward Melting and Solidification in a Horizontal Cylinder -)

  • 김일겸;조남철;김준근;이채문;임장순
    • 설비공학논문집
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    • 제1권4호
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    • pp.319-329
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    • 1989
  • Heat transfer phenomena during inward melting and solidification process of the phase change material were studied expertimentally. The phase change medium was 99% pure n-docosane paraffin ($C_{22}H_{46}$). The solid-liquid interface motion during phase change was recorded photographically. Measurements were made on the temperature, the solid-liquid interface, the melted or frozen mass and the various energy components stored or extracted from the cylinder wall. For melting, the experimental results reaffirmed the dominant role played by the conduction at an early stage, by the natural convection at longer time. For solidification, natural convection effects in the superheated liquid were modest and were confined to short freezing time. Although the latent energy is the largest contributor to the total stored or extracted energy, the aggregate sensible energies can make a significant contribution, especially at large cylinder wall superheating or subcooling, large initial phase change material subcooling or superheating.

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칼코게나이드 다층박막의 상변화 특성에 관한 연구 (A Study on Characteristics of Phase Change in Chalcogenide Multilayered Thin Film)

  • 최혁;김현구;정홍배
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1426-1427
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    • 2006
  • Chalcogenide based phase-change memory has a high capability and potential for the next generation nonvolatile memory device. Fast writing speed, low writing voltage, high sensing margin, low power consume and long cycle of read/write repeatability are also good advantages of nonvolatile phase-change memory. We have been investigated the new material for the phase-change memory. Its composition is consists of chalcogenide $Ge_{1}Se_{1}Te_2$ material. We made this new material to solve problems of conventional phase-change memory which has disadvantage of high power consume and high writing voltage. In the present work, we are manufactured $Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}$ and $Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}$ sandwich triple layer structure devices are manufactured to investigate its electrical properties. Through the present work, we are willing to ensure a potential of substitutional method to overcome a crystallization problem on PRAM device.

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Sb 광도핑에 의한 Ge1Se1Te2 박막의 상변화 메모리 특성 (The Phase-change Memory Characteristics of Ge1Se1Te2 Thin Films for Sb Photo Doping)

  • 남기현;김장한;정홍배
    • 한국전기전자재료학회논문지
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    • 제25권5호
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    • pp.329-333
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    • 2012
  • For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Sb/Ge-Se-Te thin films are fabricated and irradiated with UV light source to investigate a reversible phase change by Sb-doped condition. Because of Sb atoms, the Sb inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

Melting Heat Transfer Characteristics of Plural Phase Change Microcapsules Slurry Having Different Diameters

  • Kim, Myoung-Jun;Kim, Myoung-Hwan
    • Journal of Advanced Marine Engineering and Technology
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    • 제28권8호
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    • pp.1225-1238
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    • 2004
  • The present study has been performed for obtaining the melting heat transfer enhancement characteristics of water mixture slurries of plural microcapsules having different diameters encapsulated with solid-liquid phase change material(PCM) flowing in a pipe heated under a constant wall heat flux condition. In the turbulent flow region, the friction factor of the present PCM slurry was to be lower than that of only water flow due to the drag reducing effect of the PCM slurry. The heat transfer coefficient of the PCM slurry flow in the pipe was increased by both effects of latent heat involved in phase change process and microconvection around plural microcapsules with different diameters. The experimental results revealed that the average heat transfer coefficient of the PCM slurry flow was about 2~2.8 times greater than that of a single phase of water.