Browse > Article
http://dx.doi.org/10.4313/TEEM.2008.9.6.223

A Study on the Thermal, Electrical Characteristics of Ge-Se-Te Chalcogenide Material for Use in Phase Change Memory  

Nam, Ki-Hyun (Department of Electrical Material Engineering, Kwangwoon University)
Chung, Hong-Bay (Department of Electrical Material Engineering, Kwangwoon University)
Publication Information
Transactions on Electrical and Electronic Materials / v.9, no.6, 2008 , pp. 223-226 More about this Journal
Abstract
$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.
Keywords
Chalcogenide; Amorphous; $Ge_1Se_1Te_2$; PRAM;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 J.-M. Lee, C.-H. Yeo, K. Shin, and H.-B. Chung, "Electrical switching characteristics of $Ge_1Se_1Te_2 $ chalcogenide thin film for phase change memory", Trans. EEM, Vol. 7, No. 1, p. 7, 2006   과학기술학회마을   DOI   ScienceOn
2 N. F. Mott and E. A. Davis, "Conduction in noncrystalline systems V. conductivity, optical absorption and photoconductivity in amorphous semiconductors", Philos. Mag., Vol. 22, p. 903, 1970   DOI
3 A. Madan and M. P. Shaw, "The Physics and Applications of Amorphous Semiconductors", Academic Press, p. 382, 1988
4 H.-B. Chung, K. Shin, and J.-M. Lee, "Phasechange characteristics of chalcogenide $Ge_1Se_1Te_2 $ thin films for use in nonvolatile memories", J. Vac.Sci. Technol. A, Vol. 25, No. 1, p. 48, 2007   DOI   ScienceOn
5 F. Mizuno, T. Ohtomo, A. Hayashi, K. Tadanaga, and M. Tatsumisago, "Lithium ion conducting solid electrolytes prepared from Li2S", Elemental P and S, Solid State Ionics, Vol. 177, Issue 26-32, p. 2753, 2006   DOI   ScienceOn
6 M. A. Afifi, N. A. Hegab, H. E. Atyia, and A. S. Farid, "Investigation of DC conductivity and switching phenomenon of $Se_{80}Te_{20-x}Ge_x$ amorphous system", Journal of Alloys and Compounds, Vol.463, p. 10, 2007   DOI   ScienceOn
7 L. J. Pauling, "Nature of the Chemical Bond", Cornell University Press, New York, 1960
8 N. F. Mott and E. A. Davis, "Electronic Processes in Non-Crystalline Materials", University Press, Oxford, p. 507, 1979
9 J.-M. Lee, K. Shin, C.-H. Yeo, and H.-B. Chung, "Electrical switching studies of amorphous $Ge_1Se_1Te_2$ thin film for a high-performance nonvolatile phase-change memory", JapaneseJournal of Applied Physics, Vol. 45, No. 5B, p. 5467, 2006   DOI
10 Agostinelli, G., Dunlop, E. D., Batzner, D. L., Tiwari, A. N., Nollet, P., Burgelman, M., and Kontges, M., "Light dependent current transport mechanisms in chalcogenide solar cells", Photovoltaic Energy Conversion, Vol. 1, p. 356, 2003