Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on Characteristics of Phase Change in Chalcogenide Multilayered Thin Film

칼코게나이드 다층박막의 상변화 특성에 관한 연구

  • Choi, Hyuk (Department of Electronic Materials Eng., Kwangwoon Univ.) ;
  • Kim, Hyun-Gu (Department of Electronic Materials Eng., Kwangwoon Univ.) ;
  • Chung, Hong-Bay (Department of Electronic Materials Eng., Kwangwoon Univ.)
  • 최혁 (광운대학교 전자정보공과대학 전자재료공학과) ;
  • 김현구 (광운대학교 전자정보공과대학 전자재료공학과) ;
  • 정홍배 (광운대학교 전자정보공과대학 전자재료공학과)
  • Published : 2006.07.12
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Abstract

Chalcogenide based phase-change memory has a high capability and potential for the next generation nonvolatile memory device. Fast writing speed, low writing voltage, high sensing margin, low power consume and long cycle of read/write repeatability are also good advantages of nonvolatile phase-change memory. We have been investigated the new material for the phase-change memory. Its composition is consists of chalcogenide $Ge_{1}Se_{1}Te_2$ material. We made this new material to solve problems of conventional phase-change memory which has disadvantage of high power consume and high writing voltage. In the present work, we are manufactured $Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}$ and $Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}$ sandwich triple layer structure devices are manufactured to investigate its electrical properties. Through the present work, we are willing to ensure a potential of substitutional method to overcome a crystallization problem on PRAM device.

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