Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Thermal, Electrical Characteristics of Ge-Se-Te Chalcogenide Material for Use in Phase Change Memory

  • Nam, Ki-Hyun (Department of Electrical Material Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electrical Material Engineering, Kwangwoon University)
  • Published : 2008.12.31
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Abstract

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

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References

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