• 대한전자공학회논문지SD
• /
• 제44권12호
• /
• pp.31-36
• /
• 2007

본 논문은 100 nm BSIMSOI 3.2 기술을 사용한 부분 공핍형 SOI (Partially-Depleted SOI: PD-SOI) 회로들의 정확한 타이밍 분석을 위한 새로운 통계적 특징화 방법과 추정 방법을 제안한다. 제안된 타이밍 추정 방법은 Matlab, Hspice, 그리고 C 언어로 구현되고, ISCAS 85 벤치마크 회로들을 사용해서 검증된다. 실험 편과는 Monte Carlo 시뮬레이션과 비교해 5 % 내의 에러를 보여준다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 C
• /
• pp.1286-1288
• /
• 1997

In this study, partially-depleted SOI MOSFET with multi-gate was fabricated on p-type SIMOX(Seperation by Implanted Oxygen). As increase the number of its gate, increase the breakdown voltage. But kink effect was not affected by the number of its gate. However, it is known that the asymmetric gate structure reduce kink effect. So if asymmetric multi-gate applied to partially-depleted SOI MOSFET, it is expected that the breakdown voltage of SOI MOSET with asymmetric multi-gate is higher than that of SOI MOSFET with single gate and that kink effect is reduced by SOI MOSFET with asymmetric multi-gate.

• 대한전자공학회논문지SD
• /
• 제41권2호
• /
• pp.9-15
• /
• 2004

본 논문에서는 부분공핍(partially-depleted : PD) 영역과 완전공핍(fully-depleted : FD) 영역을 나누는 임계 전면 게이트 전압 V/sub c/의 해석적 표현을 이용해서 PD 영역과 FD 영역의 천이를 정확히 설명하는 해석적 표면전위 모델(analytical surface potential model)을 소개한다. 이 모델은 모든 동작영역(subthreshold에서 strong inversion까지)에서 유효하고 반복 계산 절차 (iteration procedure)인 수치 해석적 방법보다 훨씬 짧은 계산시간이 걸린다. 이 모델에 기초한 charge sheet 모델이 모는 동작영역에 유효한 드레인 전류의 단일 공식을 유도하는데 사용된다. 대부분의 secondary 효과들이 charge sheet 모델에 쉽게 포함되고 그 모델의 결과들은 수치해석 결과와 실험 결과를 비교적 정확히 일치한다. 세 가지의 smoothing 함수가 사용될지 라도 표면전위 미분 값은 연속이다 더욱 중요한 점은 smoothing 함수에 사용된 파라미터들은 공정 파라미터들에 크게 의존하지 않는다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제3권4호
• /
• pp.223-226
• /
• 2003

The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices

• Advances in Energy Research
• /
• 제6권1호
• /
• pp.75-90
• /
• 2019

Anthropogenic greenhouse gas emissions are rising rapidly despite efforts to curb release of such gases. One long term potential solution to offset these destructive emissions is the capture and storage of carbon dioxide. Partially depleted hydrocarbon reservoirs are attractive targets for permanent carbon dioxide disposal due to proven storage capacity and seal integrity, existing infrastructure. Optimum well completion design in depleted reservoirs requires understanding of prominent geomechanics issues with regard to rock-fluid interaction effects. Geomechanics plays a crucial role in the selection, design and operation of a storage facility and can improve the engineering performance, maintain safety and minimize environmental impact. In this paper, an integrated geomechanics workflow to evaluate reservoir caprock integrity is presented. This method integrates a reservoir simulation that typically computes variation in the reservoir pressure and temperature with geomechanical simulation which calculates variation in stresses. Coupling between these simulation modules is performed iteratively which in each simulation cycle, time dependent reservoir pressure and temperature obtained from three dimensional compositional reservoir models in ECLIPSE were transferred into finite element reservoir geomechanical models in ABAQUS and new porosity and permeability are obtained using volumetric strains for the next analysis step. Finally, efficiency of this approach is demonstrated through a case study of oil production and subsequent carbon storage in an oil reservoir. The methodology and overall workflow presented in this paper are expected to assist engineers with geomechanical assessments for reservoir optimum production and gas injection design for both natural gas and carbon dioxide storage in depleted reservoirs.

• Journal of the korean society of oceanography
• /
• 제31권4호
• /
• pp.196-206
• /
• 1996

Vertical profiles of the chlorophyll ${\alpha}$, phytoplankton abundance, nutrients and sigma-t were compared with the vertical distribution of phytoplankton species in conjunction with $^{14}$C primary production in the Southern Waters of the East Sea, Korea. In the upper mixed layer the water column was only weakly stratified and ambient nitrogenic nutrient concentrations were markedly depleted. Dissolved silicate seemed to be another limiting nutrient in the surface layer. The occupation of different water depths by several dominant diatom species was well explained by the degree of silicification of each cell and the silicate concentration of ambient seawater. Subsurface chlorophyll maxima were continuously observed in the lower parts of the euphotic layer and the depth coincided with nutricline, supporting our view that chlorophyll maximum was sustained partially by enhancement of in situ growth of phytoplankton and partially by increase of cellular chlorophyll content. The persistence of chlorophyll maximum layer was attributed to the physiological adaptation of the phytoplankters to low light intensities and to the utilization of regenerated nutrients. Integrated water column production of organic matter by photosynthesis appeared to be better related to phytoplankton cell division than to the cell growth in terms of biosynthesis of pigments and other intracellular components.

• 약학회지
• /
• 제47권3호
• /
• pp.190-194
• /
• 2003

As previously reported, an immunoglobulin M (IgM) monoclonal antibody (MAb) B6.1, specific for a cell wall B-l,2-mannotriose, was protective against vaginal infection due to Candida albicans when mice were treated with the antibody. In this study, the role of neutrophil was examined in the protective effect of MAb B6.1 against vaginal infection. To deplete neutrophils, mice were given intravenously rat anti-mouse neutrophile MAb RB6-8C5 prior to intraperitoneal administration of MAb B6.1 to these mice. The mice were examined for antibody in their reproductive tract. By an ELISA, MAb B6.1 was found in the vaginal homogenates, but no antibody was detected in vaginal lavage materials. The neutropenia was induced by a single dose of the anti-neutrophil antibody, but lymphocytes were also partially depleted. The protective effect of MAb B6.1 was decreased when mice pretreated with MAb RB6-8C5 were given the anti-Candida antibody before challenge with C. albicans yeast cells intravaginally. These results show that neutrophils are involved in the MAb B6.1 protection against Candida vaginal infection.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.21-22
• /
• 2005

Partially-depleted Silicon on insulator metal-oxide-semiconductor field- effect transistors (PD-SOI MOSFETs) with Silicon-germanium (SiGe) layer is investigated. This structure uses SiGe layer to reduce the kink effect in the floating body region near the bottom channel/buried oxide interface. Among many design parameters influencing the performance of the device, Ge composition is presented most predominant effects, simulation results show that kink effect is reduced with increase the Ge composition. Because the bandgap of SiGe layer is reduced at higher Ge composition, the hole current between body and SiGe layer is enhanced.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
• /
• pp.771-774
• /
• 2003

Passivation Ledge's device is taken possession on one-side to the Emitter in this Paper. contact used in this paper Pt as Passivation Ledge of device to use Schottky Diode which has leitmotif, It is accomplished Current Modulation that we wish to do purpose using this device. Space Charge acts as single device which is becoming Passivation to know this phenomenon. This device becomes floating as well as Punched-through. V$_{L}$ (Voltage for Ledge) = - 0.5V ~ 0.5V variable values , PD(Partially Depleted ; Λ＞0), as seeing FD(Fully Depleted ; A = 0) maximum electric current gains and Gummel Plot of I-V characteristics (V$_{L}$ = 0.1/ V$_{L}$ = -0.1 ). Becomming Degradation under more than V$_{L}$ = 0.1 , less than V$_{L}$ =-0.05 and Maximum Gain(=98.617076 A/A) value in the condition V$_{L}$ = 0.1. A Change of Modulation is electric current gains by using Schottky Diode and Extrinsic Base PN Diode of Passivation Ledge to Emitter Depletion Layer in HBT of Gummel-Poon I-V characteristics and the RF wide-band electric current gains change the Modulation of CE(Common-Emitter) amplifier description, and it had accomplished Current Gain Modulation by Ledge Bias that change in high frequency and wide bands. wide bands.s.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제11권4호
• /
• pp.262-271
• /
• 2011

In this work, we present a unified analytical surface potential model, valid for both PD and FD SOI MOSFETs. Our model is based on a simplified one dimensional and purely analytical approach, and builds upon an existing model, proposed by Yu et al. [4], which is one of the most recent compact analytical surface potential models for SOI MOSFETs available in the literature, to improve its accuracy and remove its inconsistencies, thereby adding to its robustness. The model given by Yu et al. [4] fails entirely in modeling the variation of the front surface potential with respect to the changes in the substrate voltage, which has been corrected in our modified model. Also, [4] produces self-inconsistent results due to misinterpretation of the operating mode of an SOI device. The source of this error has been traced in our work and a criterion has been postulated so as to avoid any such error in future. Additionally, a completely new expression relating the front and back surface potentials of an FD SOI film has been proposed in our model, which unlike other models in the literature, takes into account for the first time in analytical one dimensional modeling of SOI MOSFETs, the contribution of the increasing inversion charge concentration in the silicon film, with increasing gate voltage, in the strong inversion region. With this refinement, the maximum percent error of our model in the prediction of the back surface potential of the SOI film amounts to only 3.8% as compared to an error of about 10% produced by the model of Yu et al. [4], both with respect to MEDICI simulation results.