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A Unified Analytical Surface Potential Model for SOI MOSFETs  

유윤섭 (한경대학교 정보제어공학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.2, 2004 , pp. 9-15 More about this Journal
Abstract
We present a new unified analytical front surface potential model, which can accurately describe the transitions between the partially-depleted (PD) and the fully-depleted (FD) regimes with an analytical expression for the critical voltage V$_{c}$ delineating the PD and the FD region. It is valid in all regions of operation (from the sub -threshold to the strong inversion) and has the shorter calculation time than the iterative procedure approach. A charge sheet model based on the above explicit surface potential formulation is used to derive a single formula for the drain current valid in all regions of operation. Most of the secondary effects can be easily included in the charge sheet model and the model accurately reproduces various numerical and experimental results. No discontinuity in the derivative of the surface potential is found even though three types of smoothing functions are used. More importantly, the newly introduced parameters used in the smoothing functions do not strongly depend on the process parameter.
Keywords
Surface potential; Partially-depleted; Fully-depleted; Charge sheet model; Smoothing function;
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