• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.31-36
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• 2007

This paper presents a novel statistical characterization for accurate timing analysis in Partially-Depleted Silicon-On-Insulator (PD-SOI) circuits in BSIMSOI3.2 100nm technology. The proposed timing estimate algorithm is implemented in Matlab, Hspice, and C, and it is applied to ISCAS85 benchmarks. The results show that the error is within 5% compared with Monte Carlo simulation results.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1286-1288
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• 1997

In this study, partially-depleted SOI MOSFET with multi-gate was fabricated on p-type SIMOX(Seperation by Implanted Oxygen). As increase the number of its gate, increase the breakdown voltage. But kink effect was not affected by the number of its gate. However, it is known that the asymmetric gate structure reduce kink effect. So if asymmetric multi-gate applied to partially-depleted SOI MOSFET, it is expected that the breakdown voltage of SOI MOSET with asymmetric multi-gate is higher than that of SOI MOSFET with single gate and that kink effect is reduced by SOI MOSFET with asymmetric multi-gate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.2
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• pp.9-15
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• 2004

We present a new unified analytical front surface potential model, which can accurately describe the transitions between the partially-depleted (PD) and the fully-depleted (FD) regimes with an analytical expression for the critical voltage V$_{c}$ delineating the PD and the FD region. It is valid in all regions of operation (from the sub -threshold to the strong inversion) and has the shorter calculation time than the iterative procedure approach. A charge sheet model based on the above explicit surface potential formulation is used to derive a single formula for the drain current valid in all regions of operation. Most of the secondary effects can be easily included in the charge sheet model and the model accurately reproduces various numerical and experimental results. No discontinuity in the derivative of the surface potential is found even though three types of smoothing functions are used. More importantly, the newly introduced parameters used in the smoothing functions do not strongly depend on the process parameter.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.223-226
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• 2003

The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices

• Advances in Energy Research
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• v.6 no.1
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• pp.75-90
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• 2019

Anthropogenic greenhouse gas emissions are rising rapidly despite efforts to curb release of such gases. One long term potential solution to offset these destructive emissions is the capture and storage of carbon dioxide. Partially depleted hydrocarbon reservoirs are attractive targets for permanent carbon dioxide disposal due to proven storage capacity and seal integrity, existing infrastructure. Optimum well completion design in depleted reservoirs requires understanding of prominent geomechanics issues with regard to rock-fluid interaction effects. Geomechanics plays a crucial role in the selection, design and operation of a storage facility and can improve the engineering performance, maintain safety and minimize environmental impact. In this paper, an integrated geomechanics workflow to evaluate reservoir caprock integrity is presented. This method integrates a reservoir simulation that typically computes variation in the reservoir pressure and temperature with geomechanical simulation which calculates variation in stresses. Coupling between these simulation modules is performed iteratively which in each simulation cycle, time dependent reservoir pressure and temperature obtained from three dimensional compositional reservoir models in ECLIPSE were transferred into finite element reservoir geomechanical models in ABAQUS and new porosity and permeability are obtained using volumetric strains for the next analysis step. Finally, efficiency of this approach is demonstrated through a case study of oil production and subsequent carbon storage in an oil reservoir. The methodology and overall workflow presented in this paper are expected to assist engineers with geomechanical assessments for reservoir optimum production and gas injection design for both natural gas and carbon dioxide storage in depleted reservoirs.

• Journal of the korean society of oceanography
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• v.31 no.4
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• pp.196-206
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• 1996

Vertical profiles of the chlorophyll ${\alpha}$, phytoplankton abundance, nutrients and sigma-t were compared with the vertical distribution of phytoplankton species in conjunction with $^{14}$C primary production in the Southern Waters of the East Sea, Korea. In the upper mixed layer the water column was only weakly stratified and ambient nitrogenic nutrient concentrations were markedly depleted. Dissolved silicate seemed to be another limiting nutrient in the surface layer. The occupation of different water depths by several dominant diatom species was well explained by the degree of silicification of each cell and the silicate concentration of ambient seawater. Subsurface chlorophyll maxima were continuously observed in the lower parts of the euphotic layer and the depth coincided with nutricline, supporting our view that chlorophyll maximum was sustained partially by enhancement of in situ growth of phytoplankton and partially by increase of cellular chlorophyll content. The persistence of chlorophyll maximum layer was attributed to the physiological adaptation of the phytoplankters to low light intensities and to the utilization of regenerated nutrients. Integrated water column production of organic matter by photosynthesis appeared to be better related to phytoplankton cell division than to the cell growth in terms of biosynthesis of pigments and other intracellular components.

• YAKHAK HOEJI
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• v.47 no.3
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• pp.190-194
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• 2003

As previously reported, an immunoglobulin M (IgM) monoclonal antibody (MAb) B6.1, specific for a cell wall B-l,2-mannotriose, was protective against vaginal infection due to Candida albicans when mice were treated with the antibody. In this study, the role of neutrophil was examined in the protective effect of MAb B6.1 against vaginal infection. To deplete neutrophils, mice were given intravenously rat anti-mouse neutrophile MAb RB6-8C5 prior to intraperitoneal administration of MAb B6.1 to these mice. The mice were examined for antibody in their reproductive tract. By an ELISA, MAb B6.1 was found in the vaginal homogenates, but no antibody was detected in vaginal lavage materials. The neutropenia was induced by a single dose of the anti-neutrophil antibody, but lymphocytes were also partially depleted. The protective effect of MAb B6.1 was decreased when mice pretreated with MAb RB6-8C5 were given the anti-Candida antibody before challenge with C. albicans yeast cells intravaginally. These results show that neutrophils are involved in the MAb B6.1 protection against Candida vaginal infection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.21-22
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• 2005

Partially-depleted Silicon on insulator metal-oxide-semiconductor field- effect transistors (PD-SOI MOSFETs) with Silicon-germanium (SiGe) layer is investigated. This structure uses SiGe layer to reduce the kink effect in the floating body region near the bottom channel/buried oxide interface. Among many design parameters influencing the performance of the device, Ge composition is presented most predominant effects, simulation results show that kink effect is reduced with increase the Ge composition. Because the bandgap of SiGe layer is reduced at higher Ge composition, the hole current between body and SiGe layer is enhanced.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.771-774
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• 2003

Passivation Ledge's device is taken possession on one-side to the Emitter in this Paper. contact used in this paper Pt as Passivation Ledge of device to use Schottky Diode which has leitmotif, It is accomplished Current Modulation that we wish to do purpose using this device. Space Charge acts as single device which is becoming Passivation to know this phenomenon. This device becomes floating as well as Punched-through. V$_{L}$ (Voltage for Ledge) = - 0.5V ~ 0.5V variable values , PD(Partially Depleted ; Λ＞0), as seeing FD(Fully Depleted ; A = 0) maximum electric current gains and Gummel Plot of I-V characteristics (V$_{L}$ = 0.1/ V$_{L}$ = -0.1 ). Becomming Degradation under more than V$_{L}$ = 0.1 , less than V$_{L}$ =-0.05 and Maximum Gain(=98.617076 A/A) value in the condition V$_{L}$ = 0.1. A Change of Modulation is electric current gains by using Schottky Diode and Extrinsic Base PN Diode of Passivation Ledge to Emitter Depletion Layer in HBT of Gummel-Poon I-V characteristics and the RF wide-band electric current gains change the Modulation of CE(Common-Emitter) amplifier description, and it had accomplished Current Gain Modulation by Ledge Bias that change in high frequency and wide bands. wide bands.s.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.262-271
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• 2011

In this work, we present a unified analytical surface potential model, valid for both PD and FD SOI MOSFETs. Our model is based on a simplified one dimensional and purely analytical approach, and builds upon an existing model, proposed by Yu et al. [4], which is one of the most recent compact analytical surface potential models for SOI MOSFETs available in the literature, to improve its accuracy and remove its inconsistencies, thereby adding to its robustness. The model given by Yu et al. [4] fails entirely in modeling the variation of the front surface potential with respect to the changes in the substrate voltage, which has been corrected in our modified model. Also, [4] produces self-inconsistent results due to misinterpretation of the operating mode of an SOI device. The source of this error has been traced in our work and a criterion has been postulated so as to avoid any such error in future. Additionally, a completely new expression relating the front and back surface potentials of an FD SOI film has been proposed in our model, which unlike other models in the literature, takes into account for the first time in analytical one dimensional modeling of SOI MOSFETs, the contribution of the increasing inversion charge concentration in the silicon film, with increasing gate voltage, in the strong inversion region. With this refinement, the maximum percent error of our model in the prediction of the back surface potential of the SOI film amounts to only 3.8% as compared to an error of about 10% produced by the model of Yu et al. [4], both with respect to MEDICI simulation results.