• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.2
• /
• pp.37-43
• /
• 1999

Modules of the system that requires large capacity and high-speed information processing are implemented in the form of MCM that allows high-speed data processing, high density circuit integration and widely applied to such fields as ATM, GPS and PCS. Hence we developed the ATM switching module that is consisted of three chips and 2.48 Gbps data throughput, in the form of 10 multi-layer by Cu/Photo-BCB and 491pin PBGA which size is $48 \times 48 \textrm {mm}^2$. hnologies required for the development of the MCM includes extracting parameters for designing the substrate/package through the interconnect characterization to implement the high-speed characteristics, thermal management at the high-density MCM, and the generation of the testability that is one of the most difficult issues for developing the MCM. For the development of the ATM Switching MCM, we extracted signaling delay, via characteristics and crosstalk parameters through the interconnect characterization on the MCM-D. For the thermal management of 15.6 Watt under the high-density structure, we carried out the thermal analysis. formed 1.108 thermal vias through the substrate, and performed heat-proofing processing for the entire package so that it can keep the temperature less than $85^{\circ}C$. Lastly, in order to ensure the testability, we verified the substrate through fine pitch probing and applied the Boundary Scan Test (BST) for verifying the complex packaging/assembling processes, through which we developed an efficient and cost-effective product.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.9 s.351
• /
• pp.64-68
• /
• 2006

Novel system-on-package (SOP) - D technology to improve the mechanical and thermal properties of a MCM-D substrate was suggested. Based on this investigation, the two types of band pass filters for the V-band application with unique structure were designed and implemented using 2-metals, 3-BCB layers. The first type using distributed resonator had the insertion loss below 2.6 dB at 55 GHz and group delay was below 0.06 ns. For the second type with edge coupled structure, the insertion loss and group delay were 3 dB and 0.1 ns, respectively. Suggested MCM-D substrate with band pass filter can be used to evaluate mm-Wave system including flip-chip bonded MMIC.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.4
• /
• pp.53-58
• /
• 2013

An innovative packaging solution, Flip Chip with Copper (Cu) Column bond on lead (BOL) Enhanced Process (fcCuBE$^{(R)}$) delivers a cost effective, high performance packaging solution over typical bond on capture pad (BOC) technology. These advantages include improved routing efficiency on the substrate top layer thus allowing conversion functionality; furthermore, package cost is lowered by means of reduced substrate layer count and removal of solder on pad (SOP). On the other hand, as electronic packaging technology develops to meet the miniaturization trend from consumer demand, reliability testing will become an important issue in advanced technology area. In particular, electromigration (EM) of flip chip bumps is an increasing reliability concern in the manufacturing of integrated circuit (IC) components and electronic systems. This paper presents the results on EM characteristics on BOL and BOC structures under electrical current stressing in order to investigate the comparison between two different typed structures. EM data was collected for over 7000 hours under accelerated conditions (temperatures: $125^{\circ}C$, $135^{\circ}C$, and $150^{\circ}C$ and stress current: 300 mA, 400 mA, and 500 mA). All samples have been tested without any failures, however, we attempted to find morphologies induced by EM effects through cross-sectional analysis and investigated the interfacial reaction characteristics between BOL and BOC structures under current stressing. EM damage was observed at the solder joint of BOC structure but the BOL structure did not show any damage from the effects of EM. The EM data indicates that the fcCuBE$^{(R)}$ BOL Cu column bump provides a significantly better EM reliability.

• Journal of the Microelectronics and Packaging Society
• /
• v.23 no.4
• /
• pp.31-34
• /
• 2016

System In Package (SiP) is getting popular and momentum for the recent wearable, IoT and connectivity application apart from mobile phone. This is driven by market demands of cost competitive, lighter and smaller/thinner and higher performance. As one of many semiconducting assembly products, Leadframe product has been widely used for low cost solution, light/ small and thin form factor. But It has not been applied for SiP although Leadframe product has many advantages in cost, size and reliability performance. SiP is mostly based on laminate substrate and technically difficult on Leadframe substrate because of a limitation in SMT performance. In this paper, Leadframe based SiP product has been evaluated about key technical challenges in SMT performance and electrical shield technology. Mostly Leadframe is considered not available to apply EMI shield because of tie-bar around package edge. In order to overcome two major challenges, connection bars were deployed properly for SMT pad to pad and additional back-side etching was implemented after molding process to achieve electrical isolation from outer shield coating. This product was confirmed assembly workability as well as reliability.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.17 no.11 s.114
• /
• pp.1105-1111
• /
• 2006

In this paper, using low-temperature co-fired ceramic(LTCC) based system-in-package(SiP) technology, a very compact power amplifier LTCC module was designed, fabricated, and then characterized for 60 GHz wireless transmitter applications. In order to reduce the interconnection loss between a LTCC board and power amplifier monolithic microwave integrated circuits(MMIC), bond-wire transitions were optimized and high-isolated module structure was proposed to integrate the power amplifier MMIC into LTCC board. In the case of wire-bonding transition, a matching circuit was designed on the LTCC substrate and interconnection space between wires was optimized in terms of their angle. In addition, the wire-bonding structure of coplanar waveguide type was used to reduce radiation of EM-fields due to interconnection discontinuity. For high-isolated module structure, DC bias lines were fully embedded into the LTCC substrate and shielded with vias. Using 5-layer LTCC dielectrics, the power amplifier LTCC module was fabricated and its size is $4.6{\times}4.9{\times}0.5mm^3$. The fabricated module shows the gain of 10 dB and the output power of 11 dBm at P1dB compression point from 60 to 65 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.28 no.7A
• /
• pp.563-568
• /
• 2003

In this paper, a miniaturized parallel coupled bandpass filter using multi-layered LTCC(Low Temperature Co-fired Ceramics) substrate for SOP(System-On-Package) is proposed for applications to wireless communication systems. The fabricated BPF is composed of five 106${\mu}{\textrm}{m}$ thick LTCC layers and its size is 5.24mm x 4.3mm x 0.53 mm. The measured characteristics of the BPF show the center frequency of 5.8GHz, bandwidth of 200MHz, insertion loss of 2.326dB and return loss of 13.679dB. In addition, the attenuation is 28.052dB at 4.7GHz.

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.1
• /
• pp.41-47
• /
• 2011

Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. Also, the need for high speed data transmission and reception coupled with the ever increasing demand for mobility in consumer devices has generated a great interest in low cost devices with smaller form-factors. The UWB BPF makes use of lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). In this paper, this filter shows 2.0 dB insertion loss and 15 dB return loss from 7.0 GHz to 9.0 GHz. To the best of our knowledge, the UWB band-pass-filter developed in this paper has the smallest size ($1.4\;mm{\times}1.2\;mm{\times}0.40\;mm$) while achieving equivalent electrical performance.

• Journal of Advanced Marine Engineering and Technology
• /
• v.40 no.2
• /
• pp.96-101
• /
• 2016

The thermal management of high-power LED components in an assembly structure is crucial for the stable operation and proper luminous function. This study employs numerical tools to determine the optimum thermal design in LEDs with a heat sink consisting of a crevice-type vapor-chamber heat pipe. The effects of the MCPCB are investigated in terms of the substrate thicknesses on which the LEDs are mounted. Further, different placement configurations in a system module are considered. This study found that for a confined area, a power of 40 W/LED is applicable to a high-power package. Furthermore, the thermal conductivity of dielectric layer materials should ideally be greater than 0.9 W/m.K. The temperature conditions of the vapor chamber in a heat pipe greatly affect the thermal performance of the system. At an offset distance of 9.0 mm and a $2^{\circ}C$ increase in the temperature of the heat pipe, the resulting maximum temperature increase is approximately $1.9^{\circ}C$ for each heat dissipation temperature. Finally, at a thermal conductivity of 0.3 W/m.K, it was found that the total thermal resistance changes dramatically. Above 1.2 W/m.K, the resistance change reduces exponentially.

• Journal of Sensor Science and Technology
• /
• v.20 no.1
• /
• pp.58-63
• /
• 2011

A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.609-613
• /
• 2005

Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. In this paper we will outline our progress towards developing such a low power consumption active-matrix flexible OLED ($FOLED^{TM}$) display. Our work in this area is focused on three critical enabling technologies. The first is the development of a high efficiency long-lived phosphorescent OLED ($PHOLED{TM}$) device technology, which has now proven itself to be capable of meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active matrix backplanes, and for this our team are employing poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing. We also present progress in operational lifetime of encapsulated T-PHOLED pixels on planarized metal foil and discuss PHOLED encapsulation strategy.