Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Wafer-Level Package of RF MEMS Switch using Au/Sn Eutectic Bonding and Glass Dry Etch

금/주석 공융점 접합과 유리 기판의 건식 식각을 이용한 고주파 MEMS 스위치의 기판 단위 실장

  • Kang, Sung-Chan (School of Electrical Engineering, Seoul National University) ;
  • Jang, Yeon-Su (School of Electrical Engineering, Seoul National University) ;
  • Kim, Hyeon-Cheol (School of Electrical Engineering, Ulsan University) ;
  • Chun, Kuk-Jin (School of Electrical Engineering, Seoul National University)
  • 강성찬 (서울대학교 전기컴퓨터공학부) ;
  • 장연수 (서울대학교 전기컴퓨터공학부) ;
  • 김현철 (울산대학교 전기전자정보시스템공학부) ;
  • 전국진 (서울대학교 전기컴퓨터공학부)
  • Received : 2010.12.27
  • Accepted : 2011.01.14
  • Published : 2011.01.31
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Abstract

A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.

Keywords

References

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