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http://dx.doi.org/10.5369/JSST.2011.20.1.58

Wafer-Level Package of RF MEMS Switch using Au/Sn Eutectic Bonding and Glass Dry Etch  

Kang, Sung-Chan (School of Electrical Engineering, Seoul National University)
Jang, Yeon-Su (School of Electrical Engineering, Seoul National University)
Kim, Hyeon-Cheol (School of Electrical Engineering, Ulsan University)
Chun, Kuk-Jin (School of Electrical Engineering, Seoul National University)
Publication Information
Abstract
A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.
Keywords
Wafer-level Package; RF MEMS switch; Eutectic Bonding; Glass dry etch;
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Times Cited By KSCI : 2  (Citation Analysis)
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