• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.348-351
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• 1995

A modified silicon direct bonding method has been developed alloying an intimate contact between grooved and smooth mirror-polished oxide-free silicon wafers. A regular set of grooves was formed during preparation of heavily doped $p^+$-type grid network by oxide-masking und boron diffusion. Void-free bonded interfaces with filing of the grooves were observed by x-ray diffraction topography, infrared, optical. and scanning electron microscope techniques. The presence of regularly formed grooves in bending plane results in the substantial decrease of dislocation over large areas near the interface. Moreover two strongly misoriented waters could be successfully bonded by new technique. Diodes with bonded a pn-junction yielded a value of the ideality factor n about 1.5 and the uniform distribution of series resistance over the whole area of horded pn-structure. The suitability of the modified technique was confirmed by I - V characteristics of power diodes and reversly switched-on dynistor(RSD) with a working area about $12cm^2$. Both devices demonstrated breakdown voltages close to the calculation values.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.333-333
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• 2016

현재까지 가장 높은 광전류 변환 효율을 나타내는 III-V 화합물 반도체의 다중접합 태양전지 대신 이보다 단순한 에피구조를 가진 단일셀 이종접합구조의 태양전지를 제안하였다. 이를 한국나노 기술원에서 MOCVD(Metalorganic Vapour Phase Epitaxy) 장비를 이용하여 에피구조를 성장하고 태양 전지를 제작해 그 특성을 조사하였다. 태양 전지는 서로 다른 orientation의 두 GaAs 기판에 각각 동일한 에피 구조로 성장되었다. GaAs 기판은 Si 도핑된 n-type 기판으로 (100) 표면이 <111>A 방향으로 2도 off 된 웨이퍼와 10도 off 된 웨이퍼가 사용되었다. 연구에서 시뮬레이션에 사용된 태양전지의 에피 구조는 맨 위 p-GaAs (p-contact 층), p-InAlP, p-InGaP의 광흡수층과 N-InAlGaP 층과 아래의 n-InAlP와 n-GaAs의 n-contact층으로 이루어져있다.태양전지는 $5mm{\times}5mm$의 면적을 가지고 있다. 그림 1은 전류-전압의 측정된 결과를 나타낸 그래프이다. 태양전지는 1 sun 조건하에서 probe를 이용해 측정되었다. 2도 off GaAs 기판 위에 성장시킨 태양전지에서는 3.7mA의 단락전류값이, 10도$^{\circ}$ off 인 샘플에서는 4.7mA의 단락전류값이 측정되었다. 반면에 전류-전압곡선으로부터 얻은 10도 off 인 태양전지의 직렬 저항값은 2도 off 인 태양전지의 약4배 정도로 나타났다. 이는 기판의 결정방향에 따라 태양전지의 내부 전하 transport에 차이가 있음을 나타낸다. TLM (Transmission Line Model) 방법에 의한 p-contact의 ohmic저항 측정에서도 이와 일치하는 결과를 얻었다.

• Journal of information and communication convergence engineering
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• v.17 no.2
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• pp.161-165
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• 2019

In this study, zinc tin oxide (ZTO) thin-film transistors are researched to observe the correlation between the barrier potential and electrical properties. Although much research has been conducted on the electronic radiation from Schottky contacts in semiconductor devices, research on electronic radiation that occurs at voltages above the threshold voltage is lacking. Furthermore, the current phenomena occurring below the threshold voltage need to be studied. Bidirectional transistors exhibit current flows below the threshold voltage, and studying the characteristics of these currents can help understand the problems associated with leakage current. A factor that affects the stability of bidirectional transistors is the potential barrier to the Schottky contact. It has been confirmed that Schottky contacts increase the efficiency of the element in semiconductor devices, by cutting off the leakage current, and that the recombination at the PN junction is closely related to the Schottky contacts. The bidirectional characteristics of the transistors are controlled by the space-charge limiting currents generated by the barrier potentials of the SiOC insulated film. Space-charge limiting currents caused by the tunneling phenomenon or quantum effect are new conduction mechanisms in semiconductors, and are different from the leakage current.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.50.2-50.2
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• 2010

Indium Tin Oxide (ITO)는 투과도가 높고, 전기 전도도가 뛰어나 TFT, 태양전지 등 여러 가지 산업에서 전극의 재료로 널리 사용되고 있다. 전극의 재료로써 가장 중요하게 고려되어야 할 사항 중의 하나는 전극과 접촉하는 물질과의 접촉 저항이다. 특히, 태양전지에서 높은 접촉 저항은 셀을 직렬저항 요소를 증가시켜 태양전지의 효율 저하를 가져 온다. 본 연구에서는 ITO를 실리콘 태양전지에 적용하기 위하여, ITO - n-type emitter간, ITO - Ag 간의 접촉 특성을 Transfer Length Method(TLM)을 통하여 분석하였다. p-type 실리콘의 전면을 도핑하여 pn접합을 형성한 후, 그 위에 ITO 패턴을 형성하여 ITO-emitter 간의 접촉 특성을 측정하였고, 두껍게 증착한 SiNx 박막 전면에 ITO를 증착한 후, Ag 패턴을 형성하여 ITO-Ag간의 접촉 특성을 측정 하였다. 측정 결과, ITO와 emitter 간의 접촉 비저항은 $0.9{\Omega}-cm^2 $을 나타내었고, ITO와 Ag와의 접촉 비저항은 $0.096{\Omega}-cm^2 $을 나타내었다.

• ETRI Journal
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• v.7 no.4
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• pp.11-14
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• 1985

A polysilicon self-aligned bipolar n-p-n transistor structure is described, which can be used in high speed and high packing density LSI circuits The emitter of this transistor is separated less than $0.4\mum$ with base contact by polysilicon self-align technology. Through all the process, the active region of this device is not damaged. therefore a high performance device is obtained. Using the transistor with $3.0\mum$ design rules, a CML ring oscillator has per-gate minimum propagation delay time of 400 ps at 2.7 mW power consumption condition.

• Composites Research
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• v.34 no.4
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• pp.264-268
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• 2021

In this study, we propose a method for fabricating hydrophobic coatings/films with three-dimensional (3D) hierarchical nanostructured organic/inorganic composite surfaces. An epoxy-based, large-area 3D ordered nanoporous template is first prepared through an advanced photolithography technique called Proximity-field nanoPatterning (PnP). Then, a hierarchically structured surface is generated by densely impregnating the template with silica nanoparticles with an average diameter of 22 nm through dip coating. Due to the coexisting micro- and nano-scale roughness on the surface, the fabricated composite film exhibits a higher contact angle (>137 degrees) for water droplets compared to the reference samples. Therefore, it is expected that the materials and processes developed through this study can be used in various ways in the traditional coating/film field.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.10A
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• pp.1529-1539
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• 2000

The contact procedure of access channel necessary to set up the originating call has a close relation with the performance and capacity of the base station system in CDMA cellular network. This paper investigates the structure and the operation of the backward channel of IS-95 CDMA standard and explains the related system parameters. We can derive the throughput of the CDMA access channel depending on the arrivals of the access probes per access channel slot, given the system parameters such as cell radius, the maximum number of retransmission, and the error rates of the access and paging channel. It shows that the performance in throughput is much better in the CDMA IS-95 access channel than in the slotted aloha channel. It also gives the reasonable number of the trafic channels in a cell with the given blocking probability.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.248-250
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• 2009

고효율 태양전지를 위한 결정질 태양전지의 구조 중 UNSW에서 개발한 BCSC(buried contact solar cell)가 있는데, 이는 전면 전극을 laser 처리 후 무전해 니켈 도금으로 형성한 것이다. 이같은 전면 전극을 형성하기 위해서는 무전해 nickel 도금 후 열처리가 필수적이다. 우리는 이 공정을 확립하기 위해 결정질 wafer에 후면을 PECVD로 SiNx막을 형성하여 $30\Omega/\square$로 도핑한 후 후면을 불산으로 제거한 상태에서 양면을 니켈 무전해 도금으로 전극을 형성하여 $300^{\circ}C,\;350^{\circ}C,\;400^{\circ}C$에서 각각 3,6,9분간 진행하였다. 그 결과 $400^{\circ}C$에서 3분간 열처리된 sample이 상대적으로 가장 명확한 IV curve를 형성하였다. 이 실험의 결과는 PN 접합 구조에서 전극을 nickel로 사용할 때 유용하게 사용될 수 있다.

• Safety and Health at Work
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• v.12 no.2
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• pp.209-216
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• 2021

Background: The article presents the results of studies performed in order to develop a new method of airborne potassium bromate(V) determination at workplaces. Methods: The method is based on a collection of the inhalable fraction of potassium bromate(V) using the IOM Sampler, then extraction of bromates with deionized water and chromatographic analysis of the obtained solution. The analysis was performed using ion chromatography with conductometric detection. The tests were performed on a Dionex IonPac®AS22 analytic column (250 × 4 mm, 6 ㎛) with AG22 precolumn (50 × 4 mm 11 ㎛). Results: The method provides for potassium bromate(V) determination within the concentration range of 0.043 ÷ 0.88 mg/m³ for an air sample of 0.72 m³ in volume, i.e., 0.1-2 times the exposure limit value as proposed in Poland. The method was validated in accordance with PN-EN 482. The obtained validation data are as follows: measuring range: 3.1-63.4 ㎍/mL, limit of detection (LOD) = 0.018 ㎍/mL and limit of quantification (LOQ) = 0.053 ㎍/mL. The developed method has been tested in the work environment, on laboratory employees having contact with potassium bromate(V). Conclusion: The analytical method allowed the determination of the inhalable fraction of airborne potassium bromate(V) at workplaces and can be used to assess occupational exposure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.