• Korean Chemical Engineering Research
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• v.59 no.4
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• pp.632-638
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• 2021

With the copper interconnection in the semiconductor process, complex residues including copper oxide, fluoride, and polymeric fluorocarbon are formed by plasma etching. In this study, a cleaning solution was prepared with a component having an amine group (-NH₂) and a carboxyl group (-COOH), and the characteristics of removing post-etch residues in the copper wiring process were analyzed. In the cleaning solution containing an amine group, the length of the component substituted with nitrogen and the length of the carbon chain influenced the cleaning effect, and the etching rate of copper oxide increased as the pH of the cleaning solution increased. The activity of the amine group is in the basic region, and the activity of the carboxyl group is in the acidic region, and the cleaning process proceeds through complex formation with copper or copper oxide in each region.

• Applied Chemistry for Engineering
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• v.33 no.6
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• pp.624-629
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• 2022

Formaldehyde is an indoor pollutant that is harmful to humans, such as causing respiratory and skin diseases. Nitrogen plasma treatment was performed to introduce nitrogen groups on the surface of the activated carbon fibers (ACFs), and the adsorption characteristics of formaldehyde for the surface-modified ACFs were considered. As the nitrogen gas flow rate increased, the content of nitrogen functional groups introduced to the surface of the ACFs increased by about 7%, and the ratio of nitrogen functional groups to each type present was similar. Ultramicropores increased on the ACFs surface due to the etching effect of plasma treatment. The adsorption efficiency of formaldehyde on the modified ACFs surface was also enhanced. However, under the nitrogen flow rate of 120 sccm or more, the surface of the ACFs was excessively etched, and the specific surface area and the formaldehyde adsorption capacity decreased. Therefore, the content of the nitrogen groups is the main factor in the adsorption of formaldehyde on the nitrogen plasma-treated ACFs, but it can be found that the adsorption efficiency of formaldehyde is improved when the ACFs have a suitable pore structure.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.990-997
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• 1998

In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.318-331
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• 1995

The c - axis oriented single crystal of $LiNbO_3$ and $LiNbO_3$ : 5mol%MgO was success-fully grown by Floating zone method using halogen lamp as a heat source. The effects of the sintering condition of the feed rod and the atmosphere gas during the crystal growth on the be havior of the feed rod/melt interface were studied for growing crystal with the high quality, and then, the optimum growth conditions were determined by studying the experimental param eters, such as gas flow rate, pulling rate, rotation speeds of the feed rod and the seed. The grown crystals were analyzed using the chemical etching to observe the tch pattern and the ICP (Inductively Coupled Plasma) to determine the composition uniformity and the impurity content of Fe. The effects of additive (5 mol % MgO) on the transmittance and refractive index was, also, analyzed. In order to compare the nonlinear optical oharacteristics of $LiNbO_3$ with those of the other optical materials, the nonlinear optical refractive index ($n_2$) was calcu l lated using the measured refractive index.

• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.395-402
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• 1997

The $SiO_2$ films were prepared by ECR(electron cyclotron resonance) plasma diffusion method, Deal-Grove model and Wolters-Zegers-van Duynhoven model were used to estimate the oxidation rate which was correlated with surface morphology for different orientation of Si(100) and Si(111). It was seen the $SiO_2$ thickness increased linearly with initial oxidation time. But oxidation rate slightly decrease with oxidation time. It was also shown that the oxidation process was controlled by the diffusion of the reactive species through the oxide layer rather than by the reaction rate at the oxide interface. The similar time dependency has been observed for thermal and plasma oxidation of silicon. From D-G model and W-Z model, the oxidation rate of Si(111) was 1.13 times greater than Si(100) because Si(111) had higher diffusion and reaction rate, these models more closely fits the experimental data. The $SiO_2$ surface roughness was found to be uniform at experimental conditions without etching although oxidation rate was increased, and to be nonuniform due to etching at experimental condition with higher microwave power and closer substrate distance.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.67-71
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• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.35-39
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• 2018

In order to improve the coupling efficiency, a collimator lens that collects the light emitted from the laser diode at a wide angle to the core of the optical fiber is essential. Glass mold method using a mold is widely used as a collimator lens currently used. Although this method is inexpensive to produce, it is difficult to form precisely and quality problems such as spherical aberration. In this study, the precision of surface processing was improved by replacing the existing glass mold method with the semiconductor process, and the material of the lens was changed to silicon suitable for the semiconductor process. The semiconductor process consists of a photolithography process using PR and a dry etching process using plasma. The optical coupling efficiency was measured using an ultra-precision alignment system for the evaluation of the optical characteristics of the silicon lens. As a result, the optical coupling efficiency was 50% when the lens diameter was $220{\mu}m$, and the optical coupling property was 5% or less with respect to the maximum optical coupling efficiency in the lens diameter range of $210-240{\mu}m$.

• Clean Technology
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• v.27 no.3
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• pp.240-246
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• 2021

The waste etching solution for chip on film (COF) contained about 3.5% copper, and it was recovered through cementation using iron samples. The effect of cementation with plate, chip, and powder iron samples was investigated. The molar ratio (m/r) of iron to copper was used as a variable in order to increase the recovery rate of copper. As the molar ratio increased, the copper content in the solution rapidly decreased at the beginning of the cementation reaction. Before and after the reaction, the copper content of the solution was determined by Inductively Coupled Plasma (ICP) using copper concentration according to time. After cementation at room temperature for 1 hour, the recovery rate of copper had increased the most in the iron powder sample, having the largest specific surface area of the samples, followed by the chip and plate samples. The recovered copper powder was characterized for its crystalline phase, morphology, and elemental composition by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Energy-dispersive X-ray spectroscopy (EDS), respectively. Copper and unreacted iron were present together in the iron powder samples. The optimum condition for recovering copper was obtained using iron chips with a molar ratio of iron to copper of 4 giving a recovery rate of about 98.4%.

• Applied Chemistry for Engineering
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• v.30 no.2
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• pp.160-166
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• 2019

In this study, oxygen functional groups were introduced on activated carbon fibers (ACFs) by oxygen plasma treatment to improve the adsorption performance on an acetic acid which is a sick house syndrome induced gas. The active species was generated more as the flow rate of the oxygen gas increased during the plasma treatment. For this reason, the specific surface area (SSA) of the ACFs decreased with much more physical and chemical etching. In particular, the SSA of the sample (A-O60) injected with an oxygen gas flow rate of 60 sccm was reduced to about $1.198m^2/g$, which was about 6.95% lower than that of the untreated samples. On the other hand, the oxygen content introduced into the surface of ACFs increased up to 35.87%. Also, the adsorption performance on the acetic acid gas of the oxygen plasma-treated ACFs was improved by up to 43% compared to that of using the untreated ACFs. It is attributed to the formation of the hydrogen bonding due to the dipole moments between acetic acid molecules and oxygen functional groups such as O=C-O introduced by the oxygen plasma treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.224-224
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• 2012

For decades, carbon fiber has expanded their application fields from reinforced composites to energy storage and transfer technologies such as electrodes for super-capacitors and lithium ion batteries and gas diffusion layers for proton exchange membrane fuel cell. Especially in fuel cell, water repellency of gas diffusion layer has become very important property for preventing flooding which is induced by condensed water could damage the fuel cell performance. In this work, we fabricated superhydrophobic network of carbon fiber with high aspect ratio hair-like nanostructure by preferential oxygen plasma etching. Superhydrophobic carbon fiber surfaces were achieved by hydrophobic material coating with a siloxane-based hydrocarbon film, which increased the water contact angle from $147^{\circ}$ to $163^{\circ}$ and decreased the contact angle hysteresis from $71^{\circ}$ to below $5^{\circ}$, sufficient to cause droplet roll-off from the surface in millimeter scale water droplet deposition test. Also, we have explored that the condensation behavior (nucleation and growth) of water droplet on the superhydrophobic carbon fiber were significantly retarded due to the high-aspect-ratio nanostructures under super-saturated vapor conditions. It is implied that superhydrophobic carbon fiber can provide a passage for vapor or gas flow in wet environments such as a gas diffusion layer requiring the effective water removal in the operation of proton exchange membrane fuel cell. Moreover, such nanostructuring of carbon-based materials can be extended to carbon fiber, carbon black or carbon films for applications as a cathode in lithium batteries or carbon fiber composites.