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http://dx.doi.org/10.9713/kcer.2021.59.4.632

Cleaning Behavior of Aqueous Solution Containing Amine or Carboxylic Acid in Cu-interconnection Process  

Ko, Cheonkwang (Gangwon Institute for Regional Program Evaluation)
Lee, Won Gyu (Division of Chemical Engineering and Bioengineering, Kangwon National University)
Publication Information
Korean Chemical Engineering Research / v.59, no.4, 2021 , pp. 632-638 More about this Journal
Abstract
With the copper interconnection in the semiconductor process, complex residues including copper oxide, fluoride, and polymeric fluorocarbon are formed by plasma etching. In this study, a cleaning solution was prepared with a component having an amine group (-NH2) and a carboxyl group (-COOH), and the characteristics of removing post-etch residues in the copper wiring process were analyzed. In the cleaning solution containing an amine group, the length of the component substituted with nitrogen and the length of the carbon chain influenced the cleaning effect, and the etching rate of copper oxide increased as the pH of the cleaning solution increased. The activity of the amine group is in the basic region, and the activity of the carboxyl group is in the acidic region, and the cleaning process proceeds through complex formation with copper or copper oxide in each region.
Keywords
Amine; Carboxylic acid; Copper interconnection; Post etch residue; Cleaning solution;
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