• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.3
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• pp.105-109
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• 2017

In this paper is proposed wide band reconfiguration antenna by using PIN diode. The proposed antenna consisted of elliptical dipole and exponential taper balun. The proposed new matching method was exponential tapered balun in this paper. The research paper comprised of two PIN diode and Elliptical dipole. This paper used CPW to CPS feed. We obtained a good band width characteristics result by simulating. This antenna is designed to apply ISM and WiFi band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.1
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• pp.12-20
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• 2009

In this paper, we introduced the large signal model of a PIN diode and presented the measurement methods for each parameter of the large signal model. The elements of the PIN diode model are classified into the elements with a constant value and the elements depending on the junction voltage. We implemented the constant elements by lumped elements and the voltage-dependent elements by a SDD in ADS. The developed large signal model was successfully worked with various circuit simulations, such as simple DC, AC, S-parameter, Transient, and HB simulations. In order to verify the developed large signal model, we compared that the measured results of a limiter and a attenuator with the simulated results using the PIN diode model, which are in good agreement.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.156-162
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• 2016

This paper proposes a novel orthogonally-polarized dual-band switchable microstrip antenna. The proposed antenna consists of a perpendicular feeding network and an radiator with a PIN-installed H-shaped slot. When the states of one single PIN diode in H-slot are controlled by bias voltages, the controlled physical geometry of the H-slot determines the operation frequencies of switchable 1.80 GHz and 2.43 GHz for vertically polarized linear polarization and fixed 2.06 GHz for horizontally linear polarization. The implemented antenna experimentally demonstrates reconfigurable dual-band capability by means of controling the states of the PIN diode. The simulation and measurement results of the implemented antenna have been in good agreement with the reflection coefficients, realized antenna gains and far-field radiation patterns at each of the PIN diode states.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.73-81
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• 2014

Silicon PIN diode radiation sensors and CMOS readout circuits were designed and fabricated in this study. The PIN diodes were fabricated using a 380-${\mu}m$-thick 4-inch n+ Si (111) wafer containing a $2-k{\Omega}{\cdot}cm$ n- thin epitaxial layer. CMOS readout circuits employed the driving and signal processes in a radiation sensor were mixed with digital logic and analog input circuits. The primary functions of readout circuits are amplification of sensor signals and the generation of the alarm signals when radiation events occur. The radiation sensors and CMOS readout circuits were fabricated in the Institute of Semiconductor Fusion Technology (ISFT) semiconductor fabrication facilities located in Kyungpook National University. The performance of the readout circuit combined with the Si PIN diode sensor was demonstrated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.889-895
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• 2008

This paper presents a comprehensive mathematical analysis and simulation of trench IGBT with the help of PIN-PNP combinational model. Since trench IGBT is characteristically influenced by PIN diode, it may be almost impossible to analyze the trench IGBT using PNP-MOS modeling methods, even PIN-MOS techniques which neglect the hole current components coming into p-base region. A new PIN-PNP complementary cooperational model is developed in order to make up the drawbacks of existing models. It would allow us to make qualitative analysis as well as simulation about switching and on-state characteristics of 1,700 V trench IGBT. Moreover, if we improve the PIN diode effects through the optimization of trench structure, trench IGBT is expected to be one of the most promising devices in the not only high-voltage but also high speed switching device field.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.12
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• pp.16-21
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• 2007

In this paper, the dual-band voltage-controled oscillator (VCO) using the composite right/left-handed (CRLH) transmission line (TL) and the tunable negative resistance based on the fin diode is presented. It is demonstrated that the CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the phase slope of the CRLH TL, and the frequency ratio of the two operating frequencies can be a non-integer. Each frequency band of VCO has to operate independently, so we have used the tunable negative resistance based on the pin diode. When the forward bias has been into the pin diode, the phase noise of VCO is $-108.34\sim-106.67$ dBc/Hz @ 100 kHz in the tuning range, $2.423\sim2.597$ GHz, whereas when the reverse bias has been fed into the pin diode, that of VCO is $-114.16\sim-113.33$ dBc/Hz @ 100 kHz in the tuning range, $5.137\sim5.354$ GHz.

• Proceedings of the KIEE Conference
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• 2000.11d
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• pp.754-757
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• 2000

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made by micro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.7
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• pp.791-796
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• 2012

A RF limiter is a component to protect the receiver front end from undesired signal. A RF limiter is a key component whose output is constant level for all inputs above a critical value. A RF limiter use a diode to pass signals of low power while attenuating those above some threshold. A RF limiter for receiver protection in modern radar systems is playing a vital role in order to meet challenges of new interference threats and complicated electromagnetic environments. This paper proposed a new circuit for high power RF limiter whose structure is the combination of the PIN diode and Limit diode. PIN diode take a use of its isolation characteristics which act as a switch does. A 2 kW RF limiter with 200 us pulse width at S-band was developed. It shows good agreements between estimated value and measured results.

• Journal of Advanced Navigation Technology
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• v.27 no.4
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• pp.463-468
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• 2023

In this paper, we proposed reconfigurable dual polarization patch array antenna that can select two polarizations(Vertical, RHCP) using defected ground structure and Pin diode. The proposed antenna was designed arranging a circular polarization patch antenna implemented with a square microstrip patch and two slots 3x3 at 25.8mm placed, a half-wavelength of 5.8 GHz. Conect the pin diode and the capacitor to the slot diagonally placed on the ground of each antennas, and select polarization using the open/short operating according to the application of DC voltage to the pin diode. As a result of the design, the gain of the antenna is 11.7 dBi at vertical polarization and 11.6 dBic at RHCP. The axial ratio is 20.3 dB at 1.8 dB vertical polarization at RHCP. Mutual Coupling is Maximum to -20.8 dB for vertical polarization and Maximum to -30.1 dB for RHCP.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.45-52
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• 1994

A microwave PIN diode 4-bit phase shifter is designed in X-band. A loaded-line type is used for the 22.5$^{\circ}$ and 45$^{\circ}$ bits, and a switched-line type for the 90$^{\circ}$and 180$^{\circ}$bits. The measured results show that the phase error and average insertion loss are less than $\pm$5.4$^{\circ}$and 7.2dB, respectively, over a 9.75~10.25GHz frequency band.