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http://dx.doi.org/10.4313/JKEM.2008.21.10.889

A Study on the 1,700 V Rated NPT Trench IGBT Analysis by PIN Diode - PNP Transistor Model  

Lee, Jong-Seok (고려대학교 전기공학과)
Kyoung, Sin-Su (고려대학교 전기공학과)
Kang, Ey-Goo (극동대학교 정보통신공학부)
Sung, Man-Young (고려대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.10, 2008 , pp. 889-895 More about this Journal
Abstract
This paper presents a comprehensive mathematical analysis and simulation of trench IGBT with the help of PIN-PNP combinational model. Since trench IGBT is characteristically influenced by PIN diode, it may be almost impossible to analyze the trench IGBT using PNP-MOS modeling methods, even PIN-MOS techniques which neglect the hole current components coming into p-base region. A new PIN-PNP complementary cooperational model is developed in order to make up the drawbacks of existing models. It would allow us to make qualitative analysis as well as simulation about switching and on-state characteristics of 1,700 V trench IGBT. Moreover, if we improve the PIN diode effects through the optimization of trench structure, trench IGBT is expected to be one of the most promising devices in the not only high-voltage but also high speed switching device field.
Keywords
PIN-PNP model; Trench; IGBT; On-state voltage drop; Turn-off time; SOA;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
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