Browse > Article
http://dx.doi.org/10.5515/KJKIEES.2009.20.1.012

A Technique of Large Signal Modeling of PIN Diode through Measurements  

Yang, Seong-Sik (Department of Radio Science and Engineering, Chungnam National University)
Yeom, Kyung-Whan (Department of Radio Science and Engineering, Chungnam National University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.20, no.1, 2009 , pp. 12-20 More about this Journal
Abstract
In this paper, we introduced the large signal model of a PIN diode and presented the measurement methods for each parameter of the large signal model. The elements of the PIN diode model are classified into the elements with a constant value and the elements depending on the junction voltage. We implemented the constant elements by lumped elements and the voltage-dependent elements by a SDD in ADS. The developed large signal model was successfully worked with various circuit simulations, such as simple DC, AC, S-parameter, Transient, and HB simulations. In order to verify the developed large signal model, we compared that the measured results of a limiter and a attenuator with the simulated results using the PIN diode model, which are in good agreement.
Keywords
PIN Diode; Large Signal Model; Limiter; Attenuator;
Citations & Related Records
연도 인용수 순위
  • Reference
1 J. F. White, Microwave Semiconductor Engineering, New York NY: Van Nostrand Reinhold Company, 1982
2 Y. H. Liew, J. Joe, 'Large-signal diode modeling an alternativeparameter-extractiontechnique',IEEE Trans. on Microwave Theory and Tech., vol. 53, no. 8, pp. 2633-2638, Aug. 2005   DOI   ScienceOn
3 Design with PIN Diode, Alpha Industries Inc. Application Note APN-1002, 1999. Available: http:/www.alphaind.com
4 A Wideband General Purpose PIN Diode Attenuator, Alpha Industries Inc. Application Note APN- 1003, 1999
5 S. H. Gamal, H. Morel, and J. P. Chante, 'Carrier lifetime measurement by ramp recovery of p-i-n diodes', IEEE Trans. on Electron Devices, vol. 37, no. 8, pp. 1921-1924, Aug. 1990   DOI   ScienceOn
6 R. H. Caverly, 'RF technique for determining ambipolar carrier life time in pin RF switching diodes', Electronics Lett., vol. 34, no. 23, pp. 2277- 2278, Nov. 1998   DOI   ScienceOn
7 Limiter Diodes, Microsemi-Lowell, MA, 1998. Available: http://www.microsemi.com
8 R. Cory, "PIN-limiter diodes effectively protect receivers", EDN, pp. 59-64, Dec. 2004. Available: http//www.edn.com
9 D. G. Smith, D. D. Heston, J. Heston, B. Heimer, and K. Decker, 'Designing high-power limiter circuit with GaAs PIN diodes', Microwave Symposium Digest, IEEE MTT-S International, vol. 1, pp. 329-332, Jun. 1999
10 Custom Modeling with Symbolically Defined Devices, ADS 2006A Manual
11 J. Walston, 'Spice circuit yields recipe for PIN Diode', Microwaves & RF, pp. 78-89, Nov. 1992
12 Carrier Lifetime and forward Resistance in RF PIN Diodes, Siemens AG, Application Note AN 034, Jul. 1997
13 PIN Diode Model Parameter Extraction from Manufacturers Data Sheets, Ansoft Corp. Application note, 1997. Available: http://www.ansoft.com
14 Surface Mount RF PIN low distortion Attenuator Diodes, Agilent Technology, 2005. Available: http://www. datasheetcatalog.com
15 G. Hiller, Design with PIN Diodes, M/A-COM Inc. Application Note AG312, Available: http://www. macom.com
16 R. H. Caverly, G. Hiller, 'Distortion in p-i-n diode control circuits', IEEE Trans. on Microwave Theory and Tech., vol. 35, no. 5, pp. 492-501, May 1987
17 P. Sahjani, J. F. White, 'PIN diode operation and design trade-offs', Appl. Microwaves Wireless, pp. 68-78, Spr. 1991