1 |
S. Jha, Emil V. Jelenkoviae, M. M. Pejoviae, G. S. Ristiae, M. Pejoviae, K. Y. Tong, C. Surya, I. Bello, and W. j. Zhang, "Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays", Microelectronic Engineering, vol. 86, pp. 37-40, 2009.
DOI
ScienceOn
|
2 |
Y. I. Kim, H. J. Hyun, D. H. Kah, H. D. Kang, H. J. Kim, H. O. Kim, and H. Park, "Radiation damage study of a silicon PIN diode and signal-to-noise ratio mearsurement with a proton beam", J. Korean Phys. Soc., vol. 54, pp. 2066-2070, 2009.
DOI
ScienceOn
|
3 |
G. Lutz, Semiconductor Radiation Detectors, Springer Verlag, Berlin, 1999.
|
4 |
S. Glasstone and P. J. Dolan, The Effects of Nuclear Weapons 3rd edn, US GPO, Washington, D. C. 1977.
|
5 |
J. S. Iwanczyk, B. E Patt, Y. J Wang, and A. Kh Khusainov, "Comparison of HgI2, CdTe and Si (p-i-n) X-ray detectors", Nucl. Instr. Meth. Phys. Res., vol. A380, pp. 186-192, 1996.
|
6 |
D. S. McGregor and H. Hermon, "Room-temperature com- pound semiconductor radiation detectors", Nucl. Instr. Meth. Phys. Res., vol. A 395, p. 111, 1997.
|
7 |
J. H. Park, S. H. Seo, I. S. Wang , J. K. Shin, and P. Choi, "Highly sensitive active pixel sensor using a PMOSFET photodetector", J. Korean Phys, Soc. vol. 44, p. 157, 2004.
|
8 |
A. Owens and A. Peacock, "Compound semiconductor radiation detectors", Nucl. Instr. Meth. Phys. Res., vol. A 531, pp. 18-37, 2004.
|
9 |
K. S. Shah, J. C. Lund, F. Olschner, L. Moy, and M. R. Squillante, "Thallium bromide radiation detectors", IEEE Trans. Nucl. Sci., vol. 36, pp. 199-202, 1989.
DOI
ScienceOn
|
10 |
R. Wunstorf, W. M. Bugg, J. Walter, F. W. Garber, and D. Larson, "Investigations of donor and acceptor removal and long term annealing in silicon with different boron/phosphorus ratios", Nucl. Instr. Meth. Phys. Res., vol. 14, p. 109, 2000.
|