• 대한치과교정학회지
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• 제36권6호
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• pp.451-464
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• 2006

본 연구는 항 교정장치의 개발에 도움이 되고자 이산화티탄 광촉매의 코팅 시 안정적이고 효과적인 방법을 찾기 위하여 시행되었다. 시판되고 있는 교정용 와이어와 브라켓에 sol-gel법, CVD (Chemical Vapor Deposition)법 및 PE-CVD (Plasma Enhanced-CVD)법으로 이산화티탄을 각각 코팅한 다음 각 방법으로 코팅된 이산화티탄 박막의 특성을 알아보고자 주사전자현미경을 이용하여 각 시편의 코팅박막 표면의 거칠기를 관찰하였고 adhesive tape pull test를 이용하여 코팅박막의 접착강도를 측정하였다. 메틸렌블루용액에 각 시편을 침지시킨 후 시간경과에 따른 메틸렌블루용액의 농도변화 측정을 통해 코팅박막의 분해능을 평가하였으며 불화나트륨 용액에 각 시편을 침지시킨 후 주사전자현미경을 이용하여 표면부식 정도를 관찰함으로써 불소화합물에 대한 내부식성을 평가하여 다음과 같은 결과를 얻었다. 코팅박막의 표면은 CVD법 및 PE-CVD법이 sol-gel법이나 코팅되지 않은 시편에 비해 더 매끄러웠다. 코팅박막의 접착강도는 PE-CVD법이 가장 높았고, CVD법, sol-gel법의 순으로 낮게 나타났다. 코팅박막의 메틸렌블루 분해능은 PE-CVD법이 가장 높았고, CVD법, sol-gel법의 순으로 낮게 나타났다. 코팅박막의 불소화합물에 대한 내부식성은 CVD법 및 PE-CVD법이 sol-gel법에 비해 높게 나타났다. 이상의 결과는 교정용 와이어 및 브라켓의 이산화티탄 광촉매 코팅 시 CVD법 및 PE-CVD법이 sol-gel법보다 적절한 방법임을 시사하였다.

• 반도체디스플레이기술학회지
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• 제23권2호
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• pp.55-59
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• 2024

Plasma Enhanced Chemical Vapor Deposition (PE-CVD) is a widely used technology in semiconductor manufacturing for thin film deposition. The implementation of wafer guide rings in PE-CVD processes is crucial for enhancing efficiency and product quality by ensuring uniform deposition around wafer edges and reducing particle generation. On the other hand, to prevent overall temperature non-uniformity and degradation of thin film quality within the chamber, it is essential to consider various parameters comprehensively. In this study, after applying the wafer guide rings, temperature variations and fluid flow changes were simulated. Additionally, by simulating the temperature and flow changes when applied to the PE-CVD chamber, this paper discusses the importance of optimizing variables within the entire chamber.

• 한국재료학회지
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• 제3권2호
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• pp.166-174
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• 1993

반도체 소자의 표면 보호용으로 사용되는 상압 CVD 방법에 의한 PSG(Phosposilicate glass)막 및 플라즈마 CVD방법에 의한 PE-SiN(Plasma enhanced CVD S${i_2}{N_4}$)막의 항균열 특성을 알루미늄박막이 증착되어 있는 실리콘 기판위에서 조사했다. 45$0^{\circ}C$에서 30분간으 열처리를 반복하면서 균열 발생 유무 및 그 형태를 조사하여 이러한 균열의 생성을 각 막의 막응력과 관련하여 검토하였다. 이들 박막에서의 균열 발생은 하부 조직인 알루미튬배선과의 열팽창계수차에 의한 것임을 알 수 있었다. PSG막 두께가 증가할수록 인장응력이 증가하여 항균열성이 저하되었다. PSG막의 P농도가 증가할수록 막응력은 압축응력쪽으로 이동하였고 균열 발생은 억제되었다. PE-SiN 막도 높은 압축응력을 갖게 함으로써 항균열성을 향상시킬 수 있었다. 본 실험의 결과로부터 반복 열처리시 균열 발생여부에 대한 실험식을 제시하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 추계학술대회 논문집
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• pp.399-400
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• 2009

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.16-21
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• 2020

How accurately reproducible energy is delivered to the wafer in the process of making thin films using PE-CVD (Plasma enhanced chemical vapor deposition) during the semiconductor process. This is the most important technique, and most of the reaction on the wafer surface is made by thermal energy. In this study, we studied the method of monitoring the change of thermal energy transferred to the wafer surface by monitoring the temperature change according to the change of the thin film formed on the showerhead facing the wafer. Through this research, we could confirm the monitoring of wafer thin-film which is changed due to abnormal operation and accumulation of equipment, and we can expect improvement of semiconductor quality and yield through process reproducibility and equipment status by real-time monitoring of problem of deposition process equipment performance.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.67-72
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• 2020

This study analyzes the method of adhesion and improvement between heat.er and RF filter in PE-CVD equipment through TRIZ method and proposes a solution. TRIZ Solution such as function analysis, 9-window matrix, ASIT, and Root cause analysis were used. The contact temperature between the heater and the RF filter was 20% and the surface temperature was lowered to 5.7℃, suggesting an improvement method for the thermal expansion of the PE-CVD equipment hot zone.

• 한국재료학회지
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• 제15권4호
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• pp.246-251
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• 2005

Plasma enhanced chemical vapor deposition(PE-CVD) method has an advantage in synthesizing carbon nanotubes(CNTs) at lower temperature compared with thermal enhanced chemical vapor deposition(TE-CVD) method. In this study, CNTs was prepared by using PE-CVD method. The growth rate of CNT was faster more than 100 times on using Invar alloy than iron as catalyst. It was found that chrome silicide was formed at the interface between chrome layer and silicon substrate which should be considered in designing process. Nanoparticles of Invar catalyst were found oxidized on their surfaces with a depth of 10 m. Microstructure was analyzed by scanning electron microscopy, transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray spectrometry. Based on the result of analysis, growth mechanism at an initial stage was suggested.

• 한국재료학회지
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• 제3권1호
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• pp.12-18
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• 1993

단결정 실리콘위에 스퍼터법으로 증착된 티타니움막을 급속가열로에서 고상반응에 의해 형성시킨 면저항 1.2 ohm/sq. 내외의 TiS$i_2$ 박막에 있어서 열안정성을 상부절연막의 유무 및 종류에 따라 조사하였다. 상부절연막은 상압 CVD로 증착한 USG(Undoped Silicate Glass, Si$i_2$) 막과 플라즈마 CVD법으로 증착한 PE-SiN(S$i_3$$N_4$)막을 사용했다. 열안정성 평가는 90$0^{\circ}C$에서 시간을 달리하여 TiS$i_2$막, PE-SiN막, USG막의 스트레스는 각각 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$의 인장응력을 나타내었다. 응집현상은 TiS$i_2$의 응집현상은 Nabarro-Herring 마이크로 크리프에 의한 원자의 확산관점에서 검토되었다.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2003년도 학술대회지
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• pp.368-376
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• 2003

In this research, DLC thin films are produced as several hundred nm thickness by PE-CVD method. And then these thin films are estimated tribological characteristics to find out useful possibilities as a protecting film for high-quality function and life extension at MEMs by mechanical properties observation . These are measured thickness and residual stress of DLC coating. Compared after measuring friction coefficient, adhesion force, hardness, cohesive force of coating films. As results all test, we can decide several conclusions. First, friction coefficient decreased, as the load increased. otherwise, friction coefficient increased, as thickness of coating film increased under low load$(1\~50mN)$. Secod, adhesion force increased as thickness of coating films. Third, hardness of coating film is affected by substrate coating film when it is less than thickness of 300nm and it has general hardness of DLC coating film when it is more than thickness of 500nm. Fourth, cohesive force of coating film is complexly affected by hardness, adhesion force, residual stress, etc.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.248-248
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• 2012

Synthesis graphene on Cu substrate by plasma-enhanced chemical vapor deposition (PE-CVD) is investigated and its quality's affection factors are discussed in this work. Compared with the graphene synthesized at high temperature in chemical vapor deposition (CVD), the low-temperature graphene film by PE-CVD has relatively low quality with many defects. However, the advantage of low-temperature is also obvious that low melting point materials will be available to synthesize graphene as substrate. In this study, the temperature will be kept constant in $400^{\circ}C$ and the graphene was grown in plasma environment with changing the plasma power, the flow rate of precursors, and the distance between plasma generator coil and substrates. Then, we investigate the effect of temperature and the influence of process variables to graphene film's quality and characterize the film properties with Raman spectroscopy and sheet resistance and optical emission spectroscopy.