• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.69-72
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.766-770
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• 2006

The frictional behavior of oxide films on top of the plasma nitrocarburized compound layers was investigated in terms of post-oxidation treatment temperatures. The post-oxidation treatment at both temperatures($400^{\circ}C,\;500^{\circ}C$) produced magnetite($Fe_3O_4$) films which led to a significant enhancement in corrosion resistance. However, this process did not result in any improvement in frictional behavior of the nitrocarburized surface. The wear mechanisms were governed predominantly by the abrasive action of the slider on the surface irrespective of the counterface material(SiC and Bearing steel). When the specimen was sliding against a SiC counterface, the oxide films were destroyed during the early stage of the sliding process and the wear debris of the oxide film at the sliding track had a great influence on the friction coefficient. On the other hand, when sliding against a bearing steel counterface, the slider was mainly worn out due to the much higher hardness of the surface hardened layer. The fluctuation of the friction coefficient of $400^{\circ}C$-oxidized/ nitrocarburized specimen is much severer than that of $500^{\circ}C$ specimen, due to the less amount of wear debris.

• Journal of the Korean Ceramic Society
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• v.29 no.7
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• pp.551-557
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• 1992

X-ray diffraction patterns, IR spectra and zeta-potentials of silicon nitride and $\beta$-Sialon powders were investigated before and after surface manipulations. $\beta$-Sialon powder was produced from Hadong Kaolin by the carbothermic reduction and simulataneous nitridation. Isoelectric points of as-prepared Si3N4 and $\beta$-Sialon powders were 8.4 and 7.4, respectively. After both silicon nitride and $\beta$-Sialon powders were oxidized at 80$0^{\circ}C$ for 24 h in air, the isoelectric points of these powders corresponded to that of silica (pH=3). I case of the addition of Darvan C as deflocculant, its isoelectric point was 3 and zeta-potential was nearly constant in the range of pH 5~12. When SN 7347 was used as deflocculant, its isoelectric point was 8.3 and zeta-potential over -156 mV was measured above pH 11.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.683-687
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• 2004

The BON thin films were grown on the Si substrate by the RF-PECVD method. When stored at the room temperature, the phase separation or transition of BON thin films occurred on the surface, due to the hydrophilic property of BON. The oxidation of BON thin films occurred mainly by the evaporation of B, O and N. The oxidized BON thin films consisted of an amorphous phase and a bit of the polycrystalline phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.181-184
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• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability The sensitivity is 1.097∼1.21 mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.456-459
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• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.79-84
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• 1996

A $1\;{\mu}m$ thick n-type GaAs layer with Si doping density of $1{\times}10^{17}/cm^{3}$ and a $500{\AA}$ thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the $n^{+}$ GaAs substrate. The AlAs/GaAs layer was oxidized in $N_{2}$ bubbled $H_{2}O$ vapor($95^{\circ}C$) ambient at $400^{\circ}C$ for 2 and 3 hours. From the result of XPS analysis, small amounts of $As_{2}O_{3}$, AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused out toward the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to $Al_{2}O_{3}/GaAs$ at the oxidation temperature $400^{\circ}C$ for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2503-2508
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• 2010

ZnO thin films were grown on Si or $SiO_2$/Si substrates, at growth temperatures ranging from 150 to $400^{\circ}C$, by atomic layer deposition (ALD) using diethylzinc and water. Despite the large band gap of 3.3 eV, the ALD ZnO films show high n-type conductivity, i.e. low resistivity in the order of $10^{-3}\;{\Omega}cm$. In order to understand the high conductivity of ALD ZnO films, the films were characterized with X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, elastic recoil detection, Rutherford backscattering, Photoluminescence, and Raman spectroscopy. In addition, the various analytical data of the ZnO films were compared with those of ZnO single crystal. According to our analytical data, metallic zinc plays an important role for the high conductivity in ALD ZnO films. Therefore when the metallic zinc was additionally oxidized with ozone by a modified ALD sequence, the resistivity of ZnO films could be adjusted in a range of $3.8{\times}10^{-3}\;{\sim}\;19.0\;{\Omega}cm$ depending on the exposure time of ozone.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.263-268
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• 2003

Precise thickness control and excellent properties of silicon nitride thin films are essential for the next-generation semiconductor and display devices. In this study, silicon nitride thin films were deposited by batch-type atomic layer deposition (ALD) method using $SiC1_4$ and $NH_3$ as the precursors at temperatures ranging from 500 to $600^{\circ}C$. Thin film deposition using a batch-type ALD reactor was a layer-by-layer atomic growth by self-limiting surface reactions, and the thickness of the deposited film can be controlled by the number of deposition cycles. The silicon nitride thin films deposited by ALD method exhibited composition, refractive index and wet etch rate similar with those of the thin films deposited by low-pressure chemical vapor deposition method at $760^{\circ}C$. The addition of pyridine mixed with precursors increased deposition rate by 50%, however, the films deposited with pyridine was readily oxidized owing to its unstable structure, which is unsuitable for the application to semiconductor or display devices.

• Journal of Welding and Joining
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• v.28 no.6
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• pp.40-44
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• 2010

Laser assisted machining (LAM) has been researched in order to machine the silicon nitride ceramics economically and effectively. LAM is an effective machining method by local heating of the cutting part to the softening temperature of the silicon nitride using laser beam. When silicon nitride ceramics is heated using a laser beam, the surface of silicon nitride ceramic is softened, oxidized and decomposed. And then surface hardness is decreased. Through machining in low viscosity and hardness conditions, silicon nitride was machined effectively and the life span of tool was increased. The plastic deformation was occurred due to softening of amorphous YSiAlON above $ 1,000^{\circ}C$. Transgranular fracture of ${\beta}-Si_3N_4$ was occurred when YSiAlON was not softened, but mostly intergranular fracture was occurred by the plastic deformation of softened YSiAlON.