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http://dx.doi.org/10.3740/MRSK.2004.14.10.683

Oxidation of Amorphous BON Thin Films Grown by RF-PECVD  

Kim J. W. (Center for Advanced Plasma Surface Technology, Sungkyunkwan University)
Boo J.-H. (Center for Advanced Plasma Surface Technology, Sungkyunkwan University)
Lee D. B. (Center for Advanced Plasma Surface Technology, Sungkyunkwan University)
Publication Information
Korean Journal of Materials Research / v.14, no.10, 2004 , pp. 683-687 More about this Journal
Abstract
The BON thin films were grown on the Si substrate by the RF-PECVD method. When stored at the room temperature, the phase separation or transition of BON thin films occurred on the surface, due to the hydrophilic property of BON. The oxidation of BON thin films occurred mainly by the evaporation of B, O and N. The oxidized BON thin films consisted of an amorphous phase and a bit of the polycrystalline phase.
Keywords
oxidation; thin film; boron; oxygen; nitrogen;
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