Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition
![]() ![]() |
Min, Yo-Sep
(Department of Chemical Engineering, Konkuk University)
An, Cheng-Jin (Department of Chemical Engineering, Konkuk University) Kim, Seong-Keun (WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University) Song, Jae-Won (WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University) Hwang, Cheol-Seong (WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University) |
1 | Yamada, A.; Sang, B.; Konagai, M. Appl. Surf. Sci. 1997, 112, 216. DOI ScienceOn |
2 | Kaiya, K.; Yoshii, N.; Omichi, K.; Takahashi, N.; Nakamura, T.; Okamoto, S.; Yamamoto, H. Chem. Mater. 2001, 13, 1952. DOI |
3 | Park, S. H.; Lee, Y. E. J. Mater. Sci. 2004, 39, 2195. DOI |
4 | Kim, S. K.; Hwang, C. S.; Park, S. H.; Yun, S. J. Thin Solid Films 2005, 478, 103. DOI |
5 | Wagner, C. D.; Naumkin, A. V.; Kraut-Vass, A.; Allison, J. W.; Powell, C. J.; Rumble, J. R., Jr. NIST X-ray Photoelectron Spectroscopy Database, available in http://srdata.nist.gov/xps/. |
6 | Vanheusden, K.; Warren, W. L.; Seager, C. H.; Tallant, D. R.; Voigt, J. A.; Gnade, B. E. J. Appl. Phys. 1996, 79, 7983. DOI |
7 | Vanheusden, K.; Seager, C. H.; Warren, W. L.; Tallant, D. R.; Voigt, J. A. Appl. Phys. Lett. 1996, 68, 403. DOI |
8 | Leiter, F. H.; Alves, H. R.; Hofstaetter, A.; Hofmann, D. M.; Meyer, B. K. Phys. Stat. Sol. B 2001, 226, R4. DOI |
9 | Lim, J.; Shin, K.; Kim, H. W.; Lee, C. J. Lumin. 2004, 109, 181. DOI |
10 | Damen, T. C.; Proto, S. P. S.; Tell, B. Phys. Rev. 1966, 142, 570. DOI |
11 | Zhaochun, Z.; Baibiao, H.; Yongqin, Y.; Deliang, C. Mater. Sci. Engin. B 2001, 86, 109. DOI |
12 | Cui, J. B.; Daghlian, C. P.; Gibson, U. J.; Pusche, R.; Geithner, P.; Ley, L. J. Appl. Phys. 2005, 97, 044315. DOI |
13 | Van de Walle, C. G. Phys. Rev. Lett. 2000, 85, 1012. DOI |
14 | Maeda, K.; Sato, M.; Niikura, I.; Fukuda, T. Semicond. Sci. Technol. 2005, 20, S49. DOI |
15 | Kohiki, S.; Nishitani, M.; Wada, T.; Hirao, T. Appl. Phys. Lett. 1994, 64, 2876. DOI |
16 | Heiland, G.; Mollwo, E.; Stockmann, F. In Solid State Physics; Seitz, F., Turnbull, D., Eds.; Academic: New York, 1959; Vol. 8, p 191. |
17 | Look, D. C.; Hemsky, J. W.; Sizelove, J. R. Phys. Rev. Lett. 1999, 82, 2552. DOI |
18 | Janotti, A.; Van de Walle, C. G. Appl. Phys. Lett. 2005, 87, 122102. DOI |
19 | Chen, L. Y.; Chen, W. H.; Wang, J. J.; Hong, F. C. N.; Su, Y. K. Appl. Phys. Lett. 2004, 85, 5628. DOI |
20 | CRC Handbook of Chemistry and Physics; CRC Press: Boca Raton, FL, 2005. |
21 | Birkholz, M.; Selle, B.; Fenske, F.; Fuhs, W. Phys. Rev. B 2003, 68, 205414. DOI |
22 | Littbarski, R. In Zinc Oxide; Hirschwald, W., Ed.; North-Holland: Amsterdam, 1981; Vol. 7, p 212. |
23 | Lee, S.; Im, Y. H.; Kim, S. H.; Hahn, Y. B. Supperlattice Microst. 2006, 39, 24. DOI |
24 | Suntola, T. In Handbook of Crystal Growth; Hurle, D. T. J., Ed.; Elsevier: Amsterdam, 1994; Chapt. 3, p 601. |
25 | Lee, J. M.; Kim, K. K.; Park, S.-J.; Choi, W.-K. Appl. Phys. Lett. 2001, 78, 3842. DOI |
26 | Hirschwald, W. H. Acc. Chem. Res. 1985, 18, 228. DOI |
27 | Zhang, S. B.; Wei, S.-H.; Zunger, A. Phys. Rev. B 2001, 63, 75205. DOI |
28 | Tan, S. T.; Chen, B. J.; Sun, X. W.; Yu, M. B.; Zhang, X. H.; Chua, S. J. J. Electron. Mater. 2005, 34, 1172. DOI |
29 | Ozgur, U.; Alivov, Y. I.; Teke, L. A.; Reshchikov, M. A.; Dogan, S.; Avrutin, V.; Cho, S. J.; Morkoc, H. J. Appl. Phys. 2005, 98, 041301. DOI |
30 | Ellmer, K. J. Phys. D: Appl. Phys. 2001, 34, 3097. DOI |
31 | Pearton, S. J.; Norton, D. P.; Ip, K.; Heo, Y. W. J. Vac. Sci. Technol. B 2004, 22, 932. DOI |
32 | Wang, Z. L. Materials Today 2004, 6, 26. |
33 | Studenikin, S. A.; Golego, N.; Cocivera, M. J. Appl. Phys. 1998, 84, 2287. DOI |
34 | Zhang, Y.; Zhang, Z.; Lin, B.; Fu, Z.; Xu, J. J. Phys. Chem. B 2005, 109, 19200. DOI |
35 | Carcia, P. F.; McLean, R. S.; Reilly, M. H.; Nunes, G., Jr. Appl. Phys. Lett. 2003, 82, 1117. DOI |
36 | Ortega-Lopez, M.; Avila-Garcia, A.; Albor-Aguilera, M. L.; Sanchez Resendiz, V. M. Mater. Res. Bull. 2003, 38, 1241. DOI |
37 | Zhang, Y.; Du, G.; Yang, X.; Zhao, B.; Ma, Y.; Yang, T.; Ong, H. C.; Liu, D.; Yang, S. Semicond. Sci. Technol. 2004, 19, 755. DOI |
38 | Lujala, V.; Skarp, J.; Tammenmaa, M.; Suntola, T. Appl. Surf. Sci. 1994, 82/83, 34. DOI |
![]() |