한국재료학회지 (Korean Journal of Materials Research)

  • 제14권10호
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  • Pages.683-687
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  • 2004
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
권호 표지
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RF-PECVD 법으로 제조된 비정질 BON박막의 산화

Oxidation of Amorphous BON Thin Films Grown by RF-PECVD

  • 김재운 (성균관대학교 플라즈마 응용 표면기술센터) ;
  • 부진효 (성균관대학교 플라즈마 응용 표면기술센터) ;
  • 이동복 (성균관대학교 플라즈마 응용 표면기술센터)
  • Kim J. W. (Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Boo J.-H. (Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Lee D. B. (Center for Advanced Plasma Surface Technology, Sungkyunkwan University)
  • 발행 : 2004.10.01
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초록

The BON thin films were grown on the Si substrate by the RF-PECVD method. When stored at the room temperature, the phase separation or transition of BON thin films occurred on the surface, due to the hydrophilic property of BON. The oxidation of BON thin films occurred mainly by the evaporation of B, O and N. The oxidized BON thin films consisted of an amorphous phase and a bit of the polycrystalline phase.

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참고문헌

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