• 한국신뢰성학회지:신뢰성응용연구
• /
• 제10권1호
• /
• pp.65-71
• /
• 2010

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.129-132
• /
• 1998

In this paper, we have studied the effect of electron reflection on shadow mask on which tungsten oxide film is coated and have studied the variation of beam mislanding with coating thickness in CRT. We found the method to be able to control coating thicknessed and optimum coating thickness of tungsten oxide film was 1∼2$\mu\textrm{m}$. Mislanding of electron beam was reduced about 20∼48% with increasing coating thickness in CRT

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.724-726
• /
• 2007

We have developed the synthesis method to reduce the surface oxide layer in Cu nanoparticle, which is based on controlling the molecular weight of capping polymer. In addition, we demonstrated how the variation of oxide layer thickness influences the resistivity of conductive Cu film.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제3C권1호
• /
• pp.28-32
• /
• 2003

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.

• 한국재료학회지
• /
• 제9권4호
• /
• pp.414-418
• /
• 1999

Typical metal oxide thin films having optical and electrical properties are widely used as inorganic functional materials. Liquid phase deposition(LPD) method, a new low temperature process, has been developed for the several advantages of no vacuum system, low cost, high throughput, and low processing temperature(<$50^{\circ}C$). Silica powder was added to 40wt% hydrofluoro-silicic acid($H_2$SiF\ulcorner) to obtain an immersing solution of silica-saturated hydrofluorosilicic acid solution. Boric acid solution was continuously added in the range from 0 to 0.05M to prepare supersaturated hydrofluorosilicic acid solution. LPD $SiL_2$film was formed with the variation of added amount of $H_2$O. The SiO$_2$thin film could be prepared from hydrofluorosilicic acid by LPD method. The thickness of LPD $_SiO2$film was influenced by the boric acid concentration and added amount of $H_2$O. Silicon in thin film existed as SiF\ulcorner by Raman spectrum.

• 한국표면공학회지
• /
• 제30권5호
• /
• pp.333-346
• /
• 1997

Plasma spray processes for functional coatings of tubular SOFC ( Soild oxide Fuel Cell).consisting of air electrode, oxide electrolyte, an fuel electrode, are optimized by fully saturated fractional factorial testing. Material and electric characteristics of each coating are analtsed by the implementation of SEM and optical microscope for evaluating microstructure and porosity, X-ray diffraction method for investigating compositional change between raw powder and sprayed coating, and Van der Pauw method for measuring electrical conductivity. LSM ($La_{0.65}Sr_{0.35}MnO_3$air electrode and Ni-YSL fuel electrode coatings have porosities of around 23~30% sufficient for effective fuel and oxidant gas supply to electrochemical reaction interfaces and electrical conductivities of around 90 S/cm and 1000 S/cm, respectively, enough for acting as current collecting electrodes. YSZ($ZrO_2-8mol%Y_2O_3$) electrolyte film has a high ionic conductivities of 0.05~0.07 S/cm at $1000^{\circ}C$ in air atmosphere, but appears to be somewhat too porous to reduce the thickness. for enhancing the cell efficiency. A unit tubular SOFC has beem fabricated by the optimized plasma spray processes for each functional coating and the cell. Its electrochemical chracteristics are investigated by measuring voltage-current and power density with variation of operationg temperature, radio of fuel to air gas flowrates, and total gas flowrate of reactants.

• 한국전기전자재료학회논문지
• /
• 제19권11호
• /
• pp.1061-1066
• /
• 2006

This paper presents the electrical characteristics with manufacturing process and performance evaluation of high performance zinc oxide varistors. ZnO varistors were fabricated with typical ceramic production methods with different thickness and the structural and electrical characteristics of ZnO varistors were investigated. All varistors exhibited high density, which was in the range of $5.41{\sim}5.49g/cm^3$. In the electrical properties, the reference voltage increased in the range of $4.410{\sim}5.250kV$ with increasing their thickness and the residual voltage exhibited the same trends as the reference voltage. In the long duration current impulse withstand test, E-2 and F-1 samples failed at the two and four shots of impulse current, respectively, but E-1 and F-2 samples survived 18 shots during the test. Before and after this test, the variation ratio of residual voltage of E-1 and F-2 samples were -0.34 % and 0.05 %, respectively, which were in the acceptance range of 5 %. According to the results of tests, it is thought that if the fabrication process such as insulating coating, sintering condition, and soldering method is improved, these ZnO varistors would be possible to apply to the station class arresters in the near future.

• 한국진공학회지
• /
• 제19권2호
• /
• pp.141-147
• /
• 2010

$Al_2O_3$, $TiO_2$, $HfO_2$와 같은 high-k (고 유전상수) 산화물 박막을 Si, $SiO_2$/Si, GaAs 기판에 각각 입혀서 주기적인 온도변화에 의해 발생되는 박막 표면에서의 반사율 변화를 이용한 열-반사율법을 이용하여 열전도도를 측정하였다. 그 결과, 약 50nm 두께에서 0.80~1.29 W/(mK)와 같은 높은 열전도도를 가지고 있어 CMOS와 메모리 디바이스와 같은 전자 회로에서 발생되는 열을 효과적으로 방산할 수 있고, 또 미세 입자의 크기에 따라 열전달이 변화하는 것을 확인하였다.

• 한국전기전자재료학회논문지
• /
• 제27권4호
• /
• pp.203-208
• /
• 2014

In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.

• 한국전기전자재료학회논문지
• /
• 제19권9호
• /
• pp.808-812
• /
• 2006

In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.