[KSCI] Korea Science Citation Index Service

Determination of End Point for Direct Chemical Mechanical Polishing of Shallow Trench Isolation Structure

Seo, Yong-Jin (Department of Electrical Engineering, DAEBUL University)
Lee, Kyoung-Jin (Department of Electrical Engineering, DAEBUL University)
Kim, Sang-Yong (ANAM Semiconductor Inc.,)
Lee, Woo-Sun (Chosun University)

Publication Information

KIEE International Transactions on Electrophysics and Applications / v.3C, no.1, 2003 , pp. 28-32 More about this Journal

Abstract

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.

Keywords

Shallow trench isolation (STI); chemical mechanical polishing (CMP); end point detection (EPD); high selectivity slurry (HSS); reverse moat etch process;

Citations & Related Records

Reference

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