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http://dx.doi.org/10.5757/JKVS.2010.19.2.141

Thermal Conductivity Measurement of High-k Oxide Thin Films  

Kim, In-Goo (Department of Physics, University of Ulsan)
Oh, Eun-Ji (Department of Physics, University of Ulsan)
Kim, Yong-Soo (Department of Physics, University of Ulsan)
Kim, Sok-Won (Department of Physics, University of Ulsan)
Park, In-Sung (Department of Materials Science &Engineering, Hanyang University)
Lee, Won-Kyu (School of Mechanical and Automotive Engineering, University of Ulsan)
Publication Information
Journal of the Korean Vacuum Society / v.19, no.2, 2010 , pp. 141-147 More about this Journal
Abstract
In this study, high-k oxide films like $Al_2O_3$, $TiO_2$, $HfO_2$ were deposited on Si, $SiO_2$/Si, GaAs wafers, and then the thermal conductivity was measured by using thermo-reflectance method which utilizes the reflectance variation of the film surface produced by the periodic temperature variation. The result shows that high-k oxide films with 50 nm thickness have high thermal conductivity of 0.80~1.29 W/(mK). Therefore, effectively dissipate the heat generated in the electric circuit such as CMOS memory device, and the heat transfer changes according to the micro grain size.
Keywords
High-k; Dielectric constant; Thermo-reflectance method; Thermal conductivity;
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Times Cited By KSCI : 3  (Citation Analysis)
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