• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.663-664
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• 2010

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.883-888
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.687-688
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• 2009

• Journal of Technologic Dentistry
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• v.35 no.2
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• pp.105-112
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• 2013

Purpose: This study was to analyze the castability, surface oxide characteristic of Co-Cr alloy for porcelain fused to metal crown and the bonding strength of porcelain fused to metal crown. Co-Cr and Ni-Cr alloy for porcelain fused to metal crown was used for tests of the castability and surface oxide state and shear bonding strength by various porcelain. The aim of this study was to suggest the differences of result according to Co-Cr and Ni-Cr alloy. Methods: The kinds of alloy as test specimen was Co-Cr and Ni-Cr alloy. The castability index on the alloy specimens. The surfaces of two alloys were analyzed by SEM and EDX in order to observe oxide characteristic. And the shear test was performed by MTS. Results: The castability index of Co-Cr alloy was 96.8% and Ni-Cr alloy was 94.4%. The strongest bonding strength of Co-Cr alloy was shown 67.37 MPa. Conclusion: The shear bonding strength between Co-Cr alloy and EX3 porcelain was the strongest comparing with others. And all of each alloy was indicated as same level about the castability.

• Journal of Technologic Dentistry
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• v.35 no.4
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• pp.353-358
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• 2013

Purpose: This study was observation shear bonding strength by compositional change and firing step of a Ni-Cr alloy for porcelain fused metal crown. The aim of study was to suggest the material for firing step of Ni71-Cr14 alloy to development of alloy for porcelain fused to metal crown. Methods: The test was on the two kinds of Ni-Cr alloy specimens. The surfaces of two alloys were analyzed by EDX in order to observe oxide characteristic. And the shear test was performed by MTS. Results: The surface property and oxide characteristic analysis of oxide layer, weight percentage of Element O within $Ni_{71}Cr_{14}$ alloy measured 23.32wt%, and $Ni_{59}Cr_{24}$ alloy was measured 23.03wt%. And the maximum shear bonding strength was measured 58.02MPa between $Ni_{59}Cr_{24}$ alloy and vintage halo(H4 group). Conclusion: The surface property and oxide characteristic three kind of Ni-Cr alloy was similar. and shear bonding strength showed the highest bonding strength in H4 specimens.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.733-734
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• 2011

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.700-704
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• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2020-2022
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS fileds because of its application possibility in harsh environements. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The PECVD oxide was characterized by XPS and AFM, respectively. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$cm^2{\sim}$ Max : 15.5 kgf/$cm^2$).

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.