Direct Bonding Characteristics of 2" 3C-SiC Wafers for Harsh Environment MEMS Applications |
정귀상 (동서대학교 정보시스템공학부 메카트로닉스공학전공) |
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Moncryst-alline silicon carbide nanoelectro mechanical systems
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DOI ScienceOn |
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Wafer bonding of silicon wafer covered with various surface layers
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DOI ScienceOn |
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Thermal oxidation of SiC and electrical properties of Al-SiO₂-SiC MOS structure
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DOI |
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SiC as a new sensor material
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β-SiC on SiO₂formed by ion implantation and bonding for micromechanics applications
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DOI ScienceOn |
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Defect studies in epitaxial SiC-6H layers on insulator(SiCOI)
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DOI ScienceOn |
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Physical characteristics of 3C-SiC thin-films grown on Si(100) wafer
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과학기술학회마을 DOI ScienceOn |
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Infrared spectroscopy as a probe or fundamental processes in microelectronics : Silicon wafer cleansing and bonding
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DOI ScienceOn |
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Epitaxial growth of 3C-SiC films on Si substrate by triode plasma CVD using dimethlysilane
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DOI ScienceOn |
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Surface characteristic of silicon-oxide film by CMP polishing
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Metal-oxide-semiconductor characteristics of chemical vapor deposition cubic-SiC
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DOI ScienceOn |
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Wafer-to-wafer fusion bonding of oxidized silicon to silicon at low temperatures
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Deposition kinetics of silicon dioxide from tetraethylorthosilicatie by PE CVD
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Investigation of annealing effect for a SiC : H thin films deposited by plasma enhanced chemical vapor deposition
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과학기술학회마을 |
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A study on chemical vapor deposition process for the preparation of the thin SiC films
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과학기술학회마을 |
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Silicon carbide on insulator formation by the smart-cut process
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