A Study on Pre-bonding of 3C-SiC Wafers using CVD Oxide |
Shigehiro Nishino (Dept. of Electro,& Infor. Sci., Kyoto Institute of Technology) |
1 |
A model for the silicon wafer bonding process
/
DOI |
2 |
SiO₂ as an insulator for SiC devices
/
DOI ScienceOn |
3 |
Characterization of 3C-SiC grown on Si(100) wafer
/
|
4 |
SiC MEMS: opportunities and challenges for applications in harsh environments
/
DOI ScienceOn |
5 |
Low temperature silicon direct bonding for application in micromechanics : bonding energies for different combinations of oxides
/
|
6 |
CVD growth of 3C-SiC on SOI(100) substrates with optimized interface structure
/
|
7 |
Deposition kinetics of silicon dioxide from tetraethylorthosilicatie by PECVD
/
|
8 |
Studies on SiO₂- SiO₂ bonding with hydrofluoric acid : room temperature and low stress bonding technique for MEMS
/
|
9 |
Wafer-to-wafer fusion bonding of oxidized silicon to silicon at low temperatures
/
|
10 |
The fabrication of a SDB SOI substrate by electrochemical etch-stop
/
과학기술학회마을 |
11 |
Xps studies on the oxidation behavior of SiC particles
/
DOI ScienceOn |
12 |
Wafer bonding of silicon wafer covered with various surface layers
/
DOI ScienceOn |
13 |
Moncrystalline silicon carbide nanoelectro mechanical systems
/
DOI ScienceOn |
14 |
Surface characteristic of silicon-oxide film by CMP polishing
/
|
15 |
XPS and XRD study of crystalline 3C-SiC grown by sublimation
/
DOI ScienceOn |
16 |
Differences between silicon oxycarbide regions at SiC-SiO₂ prepared by plasma-assisted oxidation and thermal oxidations
/
DOI ScienceOn |