• Corrosion Science and Technology
• /
• 제9권1호
• /
• pp.20-28
• /
• 2010

According to the bipolar model, ion selectivity of some species in the passive film is important factor to control the passivation. An increase of cation selectivity of outer layer of the passive film can stabilize the film and improves the corrosion resistance. Therefore, the formation and roles of ionic species in the passive film should be elucidated. In this work, two types of solution (hydrochloric or sulfuric acid) were used to test high N and Mo-bearing stainless steels. The objective of this work was to investigate the formation of oxyanions in the passive film and the roles of oxyanions in passivation of stainless steel. Nitrogen exists as atomic nitrogen, nitric oxide, nitro-oxyanions (${NO_x}^-$), and N-H species, not nitride in the passive film. Because of its high mobility, the enriched atomic nitrogen can act as a reservoir. The formation of N-H species buffers the film pH and facilitates the formation of oxyanions in the film. ${NO_x}^-$ species improve the cation selectivity of the film, increasing the oxide content and film density. ${NO_x}^-$ acts similar to a strong inhibitor both in the passive film and at active sites. This facilitates the formation of chromium oxide. Also, ${NO_x}^-$ can make more molybdate and nitric oxide by reacting with Mo. The role of Mo addition on the passivation characteristics of stainless steel may differ with the test environment. Mo exists as metallic molybdenum, molybdenum oxide, and molybdate and the latter facilitates the oxide formation. When nitrogen and molybdenum coexist in stainless steel, corrosion resistance in chloride solutions is drastically increased. This synergistic effect of N and Mo in a chloride solution is mainly due to the formation of nitro-oxyanions and molybdate ion. Oxyanions can be formed by a 'solid state reaction' in the passive film, resulting in the formation of more molybdate and nitric oxide. These oxyanions improve the cation selectivity of the outer layer and form more oxide and increase the amount of chromium oxide and the ratio of $Cr_2O_3/Cr(OH)_3$ and make the film stable and dense.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.284-284
• /
• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• 한국안전학회지
• /
• 제38권2호
• /
• pp.30-35
• /
• 2023

Acetone is a widely used Volatile Organic Compound (VOC) in industries and laboratories. However, acetone affects human health adversely and causes fires and explosions. Early acetone detection and improved personnel training in safety and emergency management are necessary to prevent acetone-related accidents. The multi-VOC acetone detectors used currently have a sensitivity and selectivity limit. In this study, we discovered that Pt-loaded iron oxide (a metal oxide semiconductor) conversely, has high detection and selectivity for very low-levels of acetone gas. The loaded Pt catalyzes the reaction between the sensing materials' surface and the oxygen molecules in the air; this optimizes acetone detection and can decrease acetone-related illnesses, fires and explosions.

• Bulletin of the Korean Chemical Society
• /
• 제18권9호
• /
• pp.1028-1031
• /
• 1997

Electrostatic interaction is a very important parameter for the membrane selectivity. In this work, the electrical double layer establishment on the surface of metal oxide material from the Stern-Grahame model has been described. Then, some examples of rejection using micro and mesoporous ceramic membranes have been given. A correlation between the charges of the membrane material and the species to be filtered has been precised. Two rejection mechanisms have to be taken into account the size of the solutes and the electrostatic interactions.

• 한국응용과학기술학회지
• /
• 제30권4호
• /
• pp.649-655
• /
• 2013

페롭스카이트 촉매와 Mo, Bi를 기본으로 하는 복합 산화물 촉매를 이용하여 천연가스의 주성분인 메탄의 부분산화를 통하여 메탄올을 직접 합성하였다. 페롭스카이트($ABO_3$) 촉매는 A 및 B site 성분을 변화시키면서 사과산법으로 제조하였으며, Mo, Bi를 기본으로 하는 3성분계 복합 산화물 촉매는 공침법으로 제조하여 반응특성을 살펴보았다. 페롭스카이트 촉매에서 A site에 알칼리 금속인 Sr을, B site에 전이금속인 Cr을 도입한 $SrCrO_3$ 촉매가 $400^{\circ}C$에서 메탄올 선택도 11%로 가장 우수한 결과를 보였다. Mo, Bi를 기본으로 하는 3성분계 복합 산화물 촉매의 경우 모든 촉매에서 메탄 전환율에는 큰 차이를 보이지 않았으며, Cr을 첨가한 Mo-Bi-Cr 복합 산화물 촉매가 $400^{\circ}C$에서 메탄올 선택도 15.3%로 가장 우수한 결과를 나타냈다. 3성분계 복합 산화물 촉매에서 촉매의 활성과 메탄올 선택도는 촉매의 표면적에 정비례하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권5호
• /
• pp.309-314
• /
• 1999

The magnetized helical resonator plasma etcher has been built. Electron density and temperature were measured as functions of rf source power, axial magnetic field, and pressure. The results show electron density increases as the magnetic field increases and reached $2\times1012cm^{-3}$,/TEX>. The oxide etch rate and selectivity to polysilicon were investigated as the above mentioned conditions and self-bias voltage. We can obtain the much improved oxide etch selectivity to polysilicon (60 : 1) by applying the external axial weak magnetic field in magnetized helical resonator plasma etcher.

• 청정기술
• /
• 제20권1호
• /
• pp.7-12
• /
• 2014

이원계 및 삼원계 금속산화물 촉매에서 프로필렌 글리콜의 글리세롤의 전환반응을 행하였다. Cu/Zn 및 Cu/Cr 혼합산화물 촉매에서는 단일 금속 산화물에 비해 글리세롤의 전환율과 프로필렌 글리콜의 선택도가 증가하였다. 또한, Cu/Zn 촉매에 Al이 첨가된 혼합산화물 촉매에서는 글리세롤의 전환율과 프로필렌 글리콜의 선택도가 매우 크게 증가하였다. 반응온도가 증가함에 따라 글리세롤의 전환율은 점차 증가하지만 프로필렌 글리콜의 선택도는 $200^{\circ}C$에서 최대값을 보이다가 $250^{\circ}C$에서는 오히려 감소하였다. 글리세롤의 농도가 커질수록 글리세롤의 전환율과 프로필렌 글리콜의 선택도가 감소하였다.

• Korean Chemical Engineering Research
• /
• 제50권1호
• /
• pp.41-49
• /
• 2012

본 연구는 메탄 부분산화에 의한 메탄올 직접 합성을 위한 촉매 개발을 목표로 수행되었다. 이를 위하여 Mo-Bi-V-Al 복합 산화물 촉매를 제조하였으며, 제조 방법에 따른 촉매 물성을 비교하고, 제조한 촉매를 이용하여 메탄올 합성반응을 수행하여 그 결과를 검토하여 보았다. 졸-겔법으로 제조한 촉매가 공침법으로 제조한 촉매보다 비표면적이 훨씬 컸다. 입자가 작고 표면적이 클수록 부분산화반응보다는 완전산화반응이나 메탄올 산화반응이 더 잘 진행되어 메탄올의 선택도는 낮아지고 이산화탄소의 선택도는 증가하였다. 졸-겔법으로 제조한 촉매가 공침법으로 제조한 촉매보다 약 $20^{\circ}C$ 정도 더 낮은 온도에서 더 높은 메탄올 선택도(13%)를 보였다. 두 방법으로 제조한 촉매의 XRD 분석 결과 두 촉매의 결정 구조가 서로 달랐다. 본 반응에서 압력이 증가할수록 완전산화 반응이 억제되고 부분산화 반응이 일어나서 메탄올의 선택도는 증가하였고 이산화탄소의 선택도는 감소하였다.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제3C권1호
• /
• pp.28-32
• /
• 2003

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.

• Journal of information and communication convergence engineering
• /
• 제2권1호
• /
• pp.22-25
• /
• 2004

A highly sensitive ammonia gas sensor using thick-film technology has been fabricated and examined. The sensing material of the gas sensor is FeOx-$WO_{3}-SnO_{2}$ oxide semiconductor. The sensor exhibits resistance increase upon exposure to low concentration of ammonia gas. The resistance of the sensor is decreased, on the other hand, for exposure to reducing gases such as ethyl alcohol, methane, propane and carbon monoxide. A novel method for detecting ammonia gas quite selectively utilizing a sensor array consisting of an ammonia gas sensor and a compensation element has been proposed and developed. The compensation element is a Pt-doped $WO_{3}-SnO_{2}$gas sensor which shows opposite direction of resistance change in comparison with the ammonia gas sensor upon exposure to ammonia gas. Excellent selectivity has been achieved using the sensor array having two sensing elements.