The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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A study on the high selective oxide etching using magnetized helical resonator plasma source

자화된 헬리칼 공진기 플라즈마 소스를 이용한 고선택비 산화막 식각에 관한 연구

  • 이수부 (인하대 공대 전자·전기·컴퓨터공학과부 석사) ;
  • 임승완 (인하대 공대 전자·전기·컴퓨터공학과부) ;
  • 이석현 (인하대 공대 전자·전기·컴퓨터공학과부)
  • Published : 1999.05.01
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Abstract

The magnetized helical resonator plasma etcher has been built. Electron density and temperature were measured as functions of rf source power, axial magnetic field, and pressure. The results show electron density increases as the magnetic field increases and reached $2\times1012cm^{-3}$,/TEX>. The oxide etch rate and selectivity to polysilicon were investigated as the above mentioned conditions and self-bias voltage. We can obtain the much improved oxide etch selectivity to polysilicon (60 : 1) by applying the external axial weak magnetic field in magnetized helical resonator plasma etcher.

Keywords

References

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