• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.145-149
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• 2004

We have grown piezoelectric oxide films by RF magnetron sputtering using miscut substrates. Films were Brown on(001) $SrTiO_3$ substrates with miscut angles from 0 to 8 degrees toward the (100) direction. Films on high miscut substrates (>$4^{\circ}$) showed almost the pure perovskite phase in x-ray diffraction and were nearly stoichiometric. In contrast, films on exact (001) $SrTiO_3$ contained a high volume fraction of pyrochlore phases. A film on an $8^{\circ}$ miscut substrate exhibits a polarization hysteresis loop with a remnent polarization of 20$\mu$C/$\textrm{cm}^2$ at room temperature.

• Korean Journal of Materials Research
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• v.28 no.7
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• pp.411-416
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• 2018

Tungsten oxide($WO_3$) films with uniform surface morphology are fabricated using a spin-coating method for applications of electrochromic(EC) devices. To improve the EC performances of the $WO_3$ films, we control the heating rate of the annealing process to 10, 5, and $1^{\circ}C/min$. Compared to the other samples, the $WO_3$ films fabricated at a heating rate of $5^{\circ}C/min$ shows superior EC performances for transmittance modulation(49.5 %), response speeds(8.3 s in a colored state and 11.2 s in a bleached state), and coloration efficiency($37.3cm^2/C$). This performance improvement is mainly related to formation of a uniform surface morphology with increased particle size without any cracks by an optimized annealing heating rate, which improves the electrical conductivity and electrochemical activity of the $WO_3$ films. Thus, the $WO_3$ films with a uniform surface morphology prepared by the optimized annealing heating rate can be used as a potential candidate for performance improvement of the EC devices.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.35-39
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• 2007

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.358-363
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• 2015

We present an excellent detection for nitrogen monoxide (NO) gas using polycrystalline ZnO wire-like films synthesized via a simple method combined with sputtering of Zn metallic films and subsequent thermal oxidation of the sputtered Zn nanowire films in dry air. Structural and morphological characterization revealed that it would be possible to synthesize polycrystalline hexagonal wurtzite ZnO films of a wire-like nanostructure with widths of 100-150 nm and lengths of several microns by controlling the sputtering conditions. It was found from the gas sensing measurements that the ZnO wire-like thin film gas sensor showed a significantly high response, with a maximum value of 29.2 for 2 ppm NO at $200^{\circ}C$, as well as a reversible fast response to NO with a very low detection limit of 50 ppb. In addition, the ZnO wire-like thin film gas sensor also displayed an NO-selective sensing response for NO, $O_2$, $H_2$, $NH_3$, and CO gases. Our results illustrate that polycrystalline ZnO wire-like thin films are potential sensing materials for the fabrication of NO-sensitive high-performance gas sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.9-9
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• 2011

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide-based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide-based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behaviour was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ x-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.171-176
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• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.31.1-31.1
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• 2006

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.192-195
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• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.147-154
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• 2017

This research was conducted to investigate the electrochemical properties of the thin air-formed oxide film-covered AZ31 Mg alloy. Native air-formed oxide films on AZ31 Mg alloy samples were prepared by knife-abrading method and the changes in the electrochemical properties of the air-formed oxide film were investigated in seven different electrolytes containing the following anions $Cl^-$, $F^-$, $SO{_4}^{2-}$, $NO_3{^-}$, $CH_3COO^-$, $CO{_3}^{2-}$, and $PO{_4}^{3-}$. It was observed from open circuit potential (OCP) transients that the potential initially decreased before gradually increasing again in the solutions containing only $CO{_3}^{2-}$ or $PO{_4}^{3-}$ ions, indicating the dissolution or transformation of the native air-formed oxide film into new more protective surface films. The Nyquist plots obtained from electrochemical impedance spectroscopy (EIS) showed that there was growth of new surface films with immersion time on the air-formed oxide film-covered specimens in all the electrolyte. The least resistive surface films were formed in fluoride and sulphate baths whereas the most protective film was formed in phosphate bath. The potentiodynamic polarization curves illustrated that passive behaviour of AZ31 Mg alloy under anodic polarization appears only in $CO{_3}^{2-}$, or $PO{_4}^{3-}$ ions containing solutions and at more than $-0.4V_{Ag/AgCl}$ in $F^-$ ion containing solution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.567-571
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• 2009

Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer $(250{\sim}1200nm)$ and hall measurement. The post-growth thermal treatment of these films is carried out in N2 ambient at $500^{\circ}C$ for 30 min and an hour. ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films for solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the high transmittance of GZO films is improved by annealing process.