Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characterization of ZnO Thin Films and Ga doped ZnO Thin Films Post Annealing for Transparent Conducting Oxide Application

투명전극 응용을 위한 ZnO박막과 Ga 도핑 된 ZnO박막의 성장 후 열처리에 따른 특성분석

  • 장재호 (인제대학교 나노시스템공학과) ;
  • 배효준 (인제대학교 나노시스템공학과) ;
  • 이지수 (인제대학교 나노시스템공학과) ;
  • 정광현 (인제대학교 나노시스템공학과) ;
  • 최현광 (인제대학교 나노시스템공학과) ;
  • 전민현 (인제대학교 나노시스템공학과)
  • Published : 2009.07.01
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Abstract

Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer $(250{\sim}1200nm)$ and hall measurement. The post-growth thermal treatment of these films is carried out in N2 ambient at $500^{\circ}C$ for 30 min and an hour. ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films for solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the high transmittance of GZO films is improved by annealing process.

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References

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