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http://dx.doi.org/10.4313/JKEM.2009.22.7.567

Characterization of ZnO Thin Films and Ga doped ZnO Thin Films Post Annealing for Transparent Conducting Oxide Application  

Jang, Jae-Ho (인제대학교 나노시스템공학과)
Bae, Hyo-Jun (인제대학교 나노시스템공학과)
Lee, Ji-Su (인제대학교 나노시스템공학과)
Jung, Kwang-Hyun (인제대학교 나노시스템공학과)
Choi, Hyon-Kwang (인제대학교 나노시스템공학과)
Jeon, Min-Hyon (인제대학교 나노시스템공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.7, 2009 , pp. 567-571 More about this Journal
Abstract
Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer $(250{\sim}1200nm)$ and hall measurement. The post-growth thermal treatment of these films is carried out in N2 ambient at $500^{\circ}C$ for 30 min and an hour. ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films for solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the high transmittance of GZO films is improved by annealing process.
Keywords
Thim film; ZnO; GZO; RF magnetron sputter; Annealing; Transparent conducting oxide;
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