• 한국표면공학회지
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• 제40권4호
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• pp.165-169
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• 2007

Compared to conventional Indium Tin Oxide (ITO) film deposition methods, cesium (Cs) assisted sputtering offers higher film characteristics in terms of electrical, mechanical and optical properties. However, it showed highly non-linear characteristics between process input factors and equipment responses. Therefore, to maximize film quality, optimization of manufacturing process is essential and process characterization is the first step for process optimization. For this, we designed 2 level design of experiment (DOE) to analyze ITO film characteristics including film thickness, resistivity and transmittance. DC power, pressure, carrier flow, Cs temperature and substrate temperature were selected for process input variables. Through statistical effect analysis methods, relation between three types of ITO film characteristics and five kinds of process inputs are successfully characterized and eventually, it can be used to optimize Cs assisted sputtering processes for various types of film deposition.

• 한국표면공학회지
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• 제52권5호
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• pp.246-250
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• 2019

Nano-multilayered $Cr_{25.2}Al_{19.5}Si_{4.7}N_{50.5}$ films were deposited on the steel substrate by cathodic arc plasma deposition. They were corroded at $900^{\circ}C$ in $Ar/1%SO_2$ gas in order to study their corrosion behavior in sulfidizing/oxidizing environments. Despite the presence of sulfur in the gaseous environment, the corrosion was governed by oxidation, leading to formation of protective oxides such as $Cr_2O_3$ and ${\alpha}-Al_2O_3$, where Si was dissolved. Iron diffused outward from the substrate to the film surface, and oxidized to $Fe_2O_3$ and $Fe_3O_4$. The films were corrosion-resistant up to 150 h owing to the formation of thin ($Cr_2O_3$ and/or ${\alpha}-Al_2O_3$)-rich oxide layers. However, they failed when corroded at $900^{\circ}C$ for 300 h, resulting in the formation of layered oxide scales due to not only outward diffusion of Cr, Al, Si, Fe and N, but also inward movement of sulfur and oxygen.

• Advances in nano research
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• 제14권6호
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• pp.557-573
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• 2023

The rapid growth of zinc-oxide (ZnO) nanostructures (NSs) on woven carbon fiber (WCF) is reported in this study employing a microwave-aided chemical bath deposition process. The effects of different process parameters such as molar concentration, microwave duration and microwave power on morphologies and growth rate of the ZnO on WCF were studied. Furthermore, an attempt has been taken to study influence of different type of growth solutions on ZnO morphologies and growth rates. The surface functionalization of WCF fabrics is achieved by successful growth of crystalline ZnO on fiber surface in a very short duration through one-step microwave synthesis. The morphological, structural and compositional studies of ZnO-modified WCF are evaluated using field-emission scanning electron microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy respectively. Good amount of zinc and oxygen has been seen in the surface of WCF. The presence of the wurtzite phase of ZnO having crystallite size 30-40 nm calculated using the Debye Scherrer method enhances the surface characteristics of WCF fabrics. The UV-VIS spectroscopy is used to investigate optical properties of ZnO-modified WCF samples by absorbance, transmittance and reflectance spectra. The variation of different parameters such as dielectric constants, optical conductivity, refractive index and extinction coefficient are examined that revealed the enhancement of optical characteristics of carbon fiber for wide applications in optoelectronic devices, carbon fiber composites and photonics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• Bulletin of the Korean Chemical Society
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• 제24권11호
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• pp.1659-1663
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• 2003

$Al_2O_3$ thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAl: $(CH_3)_2AlOCH(CH_3)_2$], as a new Al precursor, and water by atomic layer deposition (ALD). The selflimiting ALD process by alternate surface reactions of DMAI and $H_2O$ was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-$H_2O$ cycles. Under optimal reaction conditions, a growth rate of ~1.06 ${\AA}$ per ALD cycle was achieved at the substrate temperature of $150\;^{\circ}C$. From a mass spectrometric study of the DMAI-$D_2O$ ALD process, it was determined that the overall binary reaction for the deposition of $Al_2O_3\;[2\;(CH_3)_2AlOCH(CH_3)_2\;+\;3\;H_2O\;{\rightarrow}\;Al_2O_3\;+\;4\;CH_4\;+\;2\;HOCH(CH_3)_2]$can be separated into the following two half-reactions: where the asterisks designate the surface species. Growth of stoichiometric $Al_2O_3$ thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an $Al_2O_3$ film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the $Al_2O_3$ film and the Si substrate. C-V measurements of an $Al_2O_3$ film showed capacitance values comparable to previously reported values.

• 한국재료학회지
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• 제7권3호
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• pp.196-202
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• 1997

PLT 박막의 증착방법으로 ECR PECVD법을 이용한 경우 $440~500^{\circ}C$의 비교적 낮은 온도에서 순수한 perovskite구조를 가진$(Pb,La)TiO_{3}$박막을 성공적으로 제조하였다. 기판온도 증가에 따라 반응기체 및 산화물(특히 Pb oxkde)의 휘발성이 증대되어 증착속도가 감소하고 (Pb oxide)의 휘발성이 증대되어 증착속도가 감소하고 (Pb+La)/Ti조성비가 감소하였다. $460~480^{\circ}C$의 온도범위에서 증착한 PLT 박막이 화학양론비를 가장 잘 만족하였으며 이때 높은 유전상수와 가장 우수한 누설전류 특성을 나타내었다. $La(DPM)_{3}$ 유입량 증가에 따라 $(Pb, La)TiO_{3}$ 박막의 La 조성이 거의 직선적으로 비례하여 증가하였는데 La/Ti비가 3.0%에서 9.5%까지 증가함에 따라 PLT 박막의 유전 상수는 360부터 650까지 증가하였고 100kV/cm 전기장하에서의 누설전류도 $4{\times}10^{-5}$에서 $4{\times}10_{-8}A/cm^2$로 향상되었다.

• 마이크로전자및패키징학회지
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• 제26권2호
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• pp.15-21
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• 2019

원자층 증착법(ALD: atomic layer deposition)으로 $150^{\circ}C$에서 성장된 zinc oxide (ZnO) 초박막의 두께 변화에 따른 구조적, 전기적, 광학적 특성을 조사하였다. ZnO 박막을 증착하기 위해 금속 전구체와 반응물로 각각 diethylzinc와 deionized water를 사용하였다. ALD 사이클 당 성장률은 $150^{\circ}C$에서 약 0.21 nm/cycle로 일정 하였으며, 50 사이클 이하의 샘플들은 초기 ALD 성장 단계에서 상대적으로 얇은 두께로 인하여 비정질 성질을 갖는 것으로 보였다. 100 사이클에서 200 사이클로 두께가 증가함에 따라 ZnO 박막의 결정성이 증가하였고 hexagonal wurtzite 구조를 보였다. 또한, ZnO 박막의 입자 크기가 ALD 사이클의 수의 증가에 따라 증가되었다. 전기적 특성 분석 결과 박막 두께의 증가에 따라서 비저항 값이 감소하였으며, 이는 박막 두께 증가에 따른 입자 크기 증가 및 결정성 개선으로 더 두꺼운 ZnO 박막에서 입자 경계의 농도 감소와 상관 관계가 있음을 알 수 있었다. 광학적 특성 분석 결과 근 자외선 영역 (300 nm~400 nm)에서의 밴드 엣지 흡수가 증가 및 이동되었는데 이 현상은 ZnO 박막 두께의 증가에 따른 캐리어 농도의 증가가 기인 한 것으로, 이 결과는 박막 두께의 증가에 따른 저항률 감소와 잘 일치한다. 결과적으로 박막의 두께가 증가하면 막 면의 응력이 완화되어 밴드 갭이 감소하고 결정성 및 전도성이 향상됨을 알 수 있었다.

• 한국진공학회지
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• 제20권5호
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• pp.381-386
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• 2011

실리콘(silicon) 기판위에 전기화학증착법(electrochemical deposition)을 이용하여 성장된 ZnO (zinc oxide) 나노로드 표면에 $SiO_2$ (silicon dioxide)를 전자빔증발법(e-beam evaporation)을 이용하여 증착하였으며, 이는 자연적으로 경사입사(oblique angle) 증착이 이루어져 $SiO_2$ 나노로드가 자발 형성되어, ZnO/$SiO_2$ 가지형 나노계층구조형태가 제작될 수 있음을 확인하였다. 실험을 위해서 $SiO_2$ 증착률을 0.5 nm/s로 고정하고 $SiO_2$ 증착시간을 변화시켰으며, 각각 나노구조의 형태와 광학적 특성을 분석하였다. 실리콘 기판위에 전기화학증착법으로 성장된 ZnO 나노로드는 수직으로 정렬된 1차원의 나노구조의 기하학적 형태를 갖고 있어, 입사되는 빛의 파장이 300 nm에서 535 nm인 영역에서 10% 미만의 반사방지(antireflection) 특성을 보였으며, $SiO_2$ 증착시간이 100 s일 때의 ZnO/$SiO_2$ 가지형 나노계층구조에서는 점차적 변화를 갖는 유효 굴절률 분포로 인해 개선된 반사 방지 특성을 확인하였다. 이러한 반사방지 특성과 branch 계층형태의 나노구조형태는 광전소자 및 태양광 소자 응용에 있어서 유용한 소재로 사용될 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• 멤브레인
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• 제30권2호
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• pp.97-110
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• 2020

이산화탄소 포집 및 저장기술(CCS)은 인류발생적 요인에 의한 이산화탄소 배출 증가와 그로 인한 기후변화를 완화시킬 수 있는 기술 중 하나이다. 그 중, 매체 순환식 연소(chemical looping combustion, CLC)와 칼슘루핑(calcium looping) 기술은 현재 아민 스크러빙(amine scrubbing)을 대체할 수 있는 유망한 기술로 주목받고 있다. 두 방법 모두 금속 산화물을 이용한 연속적인 순환 사이클 반응에 의한 것이다. 전체적인 이산화탄소 포집 및 저장 성능의 향상을 위해서는 사이클을 거듭하며 발생하는 소결(sintering)로 인한 안정성 저하 문제를 해결하고 금속 산화물의 구조 또한 최적화해야 한다. 금속 산화물 표면에 얇은 박막을 형성하는 것은 소결로 인한 손상을 막을 수 있는 방법이다. 이러한 박막 제조 기술로 잘 알려진 기술에는 화학기상증착법(chemical vapor deposition)과 원자층증착기술(atomic layer deposition)이 있다. 본 총설에서는 CVD, ALD 기술을 비롯하여 효과적인 반응 안정성 향상을 위한 안정제 첨가 방법, 금속 산화물 구조 개선에 대한 다양한 최근 기술들을 다루었다.