• Journal of Power Electronics
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• v.12 no.3
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• pp.503-508
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• 2012

Tracking the Maximum Power Point (MPP) of a photovoltaic (PV) array is usually an essential part of a PV system. The problem addressed by Maximum Power Point Tracking (MPPT) techniques is to find the voltage $V_{MPP}$ or current $I_{MPP}$ at which a PV array should operate to generate the maximum power output $P_{MPP}$ under a given temperature and irradiance. MPPT control methods such as the perturb and observe method and the incremental conductance method require a microprocessor or DSP to determine if the duty cycle should be increased or not. This paper proposes a simple and fast analog MPPT method. The proposed control scheme tracks the MPP very quickly and its hardware implementation is simple when compared with the conventional techniques. The new algorithm can successfully track the MPP even in the case of rapidly changing atmospheric conditions. In addition, it has higher efficiency than ordinary algorithms.

• Science of Emotion and Sensibility
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• v.1 no.1
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• pp.105-111
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• 1998

중추신경계돠 자율신경계에 나타난 후각에 의한 감성변화를 측정하기 위해 후각자극은 0.6% 오렌지향과 2.5% valeric acid를 수증기로 포화시키는 후각 자극기를 통해 일정 flow와 농도로 시행하였다. 대조자극은 방안 공기로 향자극 전후에 시행하였으며 뇌파자극은 international 10-20 systim에서 4채널을 사용하였다. 이외에 ECG, EOG, heart rate, skin conductance와 respiration를 기록하였고 뇌파분석은 fast Fourier tuansform analysis의 power spectra로 하였다. 그 frequency banes는 delta(0-4.5Hz), theta(4.5-7Hz)은 쾌하고 친숙하게 valeric acid는 불쾌하고 성가시게 평가되었다. 뇌파분석에서 쾌와 불쾌 자극간의 차이는 PG2-A2 channel 에서 alphal의 자극전후의 차이를 나타내었으며 불유쾌한 자극에서는 모든 channel alphal, alpha2와 beta파 증가를 보였다. 또한 heart rate, galvaric skin resistance는 쾌자극에서 감소양상을 나타내었으며 불쾌자극에서는 반대경향을 보였다. 호흡에서는 쾌자극에서 호흡수 감소경향과 input/output amplitude dutation와 duration의 증가경향을 보였으며 불쾌자극에서는 반대양상을 보였다. 결론적으로 쾌와 불쾌 후각자극으로 감성변화를 뇌파와 자율신경계에서 볼 수 있었다.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.263-265
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• 2009

In order to improve the output efficiency of the PV system, we adopt maximum power point tracking(MPPT) techniques. This paper analyzes a two-mode MPPT method based on the variable step size incremental conductance method and constant voltage MPPT method. Compared with the conventional MPPT method, the proposed method can effectively improve the MPPT speed and maximize the efficiency with the irradiation and temperature changing. In this paper, a theoretical analysis is provided and feasibility of this method is proved by simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.347-352
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• 1998

In this paper, the extraction and optimization of SPICE parameters on SONOSFET for NVSM circuit design were discussed. SONOSFET devices with different channel widths and lengths were fabricated using conventional 1.2 um n-well CMOS process. And, electric properties for dc parameters and capacitance parameters were measured on wafer. SPICE parameters for the SONOSFET were extracted from the UC Berkeley level 3 model for the MOSFET. And, local optimization of Ids-Vgs curves has carried out in the bias region of subthreshold, linear, saturation respectively. Finally, the extracted SPICE parameters were optimized globally by comparing drain current (Ids), output conductance(gds), transconductance(gm) curves with theoretical curves in whole region of bias conditions. It is shown that the conventional model for the MOSFET can be applied to the SONOSFET modeling except sidewalk effect.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.2
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• pp.89-95
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• 2009

Tracking the Maximum Power Point(MPP) of a photovoltaic(PV) array is usually an essential part of a PV system. The problem considered by MPPT techniques is to find the voltage $V_{MPP}$ or current $I_{MPP}$ at which a PV array should operate to generate the maximum power output PMPP under a given temperature and irradiance. The MPPT control methods, such as the perturb and observe method and the incremental conductance method require microprocessor or DSP to determine if the duty cycle should be increased or not. This paper proposes a simple and fast analog MPPT method. The proposed control scheme will track the MPP very fast and its hardware implementation is so simple, compared with the conventional techniques. The new algorithm has successfully tracked the MPP, even in case of rapidly changing atmospheric conditions, and Has higher efficiency than ordinary algorithms.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.7
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• pp.659-664
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• 2016

In this paper, we suggest operational trans-conductance amplifier(OTA) for current-mode FIR filter that can be used in a digital circuit system requiring high operating frequency and low power consumption. The current-mode signal processing is one of the very innovative design method for a low power consumption system with high operating frequency because it shows a constant power regardless of frequency. From the simulation result using 0.35um CMOS process, when Vdd is 2V, it is confirmed that the proposed circuit showed the dynamic range of the about 1V, about 50% of supply voltage and output current swing of about 0~200uA. Also, the power consumption was evaluated with about 21uW and the active size for an integration was measured with $71um{\times}166um$.

• The Journal of Korean Institute of Information Technology
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• v.17 no.9
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• pp.19-30
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• 2019

Photovoltaic power generation requires MPPT algorithm to track stable and efficient maximum power output power point according to external changes such as solar radiation and temperature. This study implemented a model that could track MPP more quickly than original MPPT algorithm using artificial neural network. The proposed model finds the current and voltage of MPP using the original MPPT algorithm for various combinations of insolation and temperature for training data of artificial neural networks. The acquired MPP data was learned using the input node as insolation and temperature and the output node as the current and voltage. The Experiment results show tracking time of the original algorithms P&O, InC and Fuzzy were respectively 0.428t, 0.49t and 0.4076t for the 0t~0.3t range, and MPP tracking time of the proposed model was 0.32511t and it is 0.1t faster than the original algorithms.

• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.3
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• pp.15-26
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• 1971

The paper presents a new method for analyzing oscillation regions of transistor oscillators. In transistor feedback oscillators oscillation region appears as a circle in feedback impedance complex plane. When the resistive component of feedback impedance is fixed and the reactive component of feedback impedance is varied or vice versa, the locus of maximum negative output conductance becomes hyperbola. In transistor crystal oscillators oscillation region is determined by two circles which make real part and imaginary part of input impedance zero in load impedance complex plane. When the resistive compoment of load impedance is fixed and the reactive colnponent of load impedance is varied or vice versa, the loci of maximum or minimum resistive component of input impedance become straight lines.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.60-66
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• 1998

The hot carrier induced performance degradation of 0.8${\mu}{\textrm}{m}$ RF NMOSFET has been investigated within the general framework of the degradation mechanism. The device degradation model of an unit finger gate MOSFET could be applied for the device degradation of the multi finger gate RF NMOSFET. The reduction of cut-off frequency and maximum frequency can be explained by the transconductance reduction and the drain output conductance increase, which are due to the interface state generation after the hot carrier stressing. From the correlation between hot carrier induced DC and RF performance degradation, we can predict the RF performance degradation just by the DC performance degradation measurement.

• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.53-57
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• 2006

In this paper, a Symmetric Dual-gate Single-Si TFT, which includes three split floating n+ zones, is simulated. This structure drastically reduces the kink-effect and improves the on-current. This is due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region. This structure allows effective reduction in the kink-effect, depending on thy length of the two sub-channels. The on-current of the proposed dual-gate structure is 0.9 mA, while that of the conventional dual-gate structure is 0.5 mA, at both 12 V drain and 7 V gate voltages. This result shows an 80% enhancement in on-current. In addition, the reduction of electric field in the channel region compared to a conventional single-gate TFT and the reduction of the output conductance in the saturation region, is observed. In addition, the reduction in hole concentration, in the channel region, in order for effectively reducing the kink-effect, is also confirmed.