• Journal of electromagnetic engineering and science
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• v.6 no.1
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• pp.18-23
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• 2006

In this paper, we demonstrate a fully integrated X-band image rejection down converter, which was developed using InGaP/GaAs HBT MMIC technology, consists of two single-balanced mixers, a differential buffer amplifier, a differential YCO, an LO quadratue generator, a three-stage polyphase filter, and a differential intermediate frequency(IF) amplifier. The X-band image rejection downconverter yields an image rejection ratio of over 25 dB, a conversion gain of over 2.5 dB, and an output-referred 1-dB compression power$(P_{1dB,OUT})$ of - 10 dBm. This downconverter achieves broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 60 mA from a 3-V supply.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.196-203
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• 2006

An air-gap type FBAR was designed using Leach equivalent model for analyzing a vertical structure of the FBAR. For the top electrode, Pt, and the bottom electrode, Au, of $1.2{\mu}m$ thickness and the piezoelectric of 0.8,urn thickness, the resonance and anti-resonance occurred at 2.401 GHz and 2.460 GHz, respectively. $S_{11}$ was increased and $S_{21}$ was decreased as the resonance area of FBAR was widened. We observed the characteristics of insertion loss, bandwidth and out-of-band rejection of ladder-type FBAR BPF by changing resonance areas of series and shunt resonators and by adding stages. As the resonance area of series resonator was increased, insertion loss was improved but out-of-band rejection was degraded. And as the resonance area of shunt resonator was increased, insertion loss was degraded a little but out-of-band rejection was improved even without adding stages. We, also, changed the shape of the resonance area from square shape to rectangle shape to examine the effects of the resonator shape on the characteristics of the BPF. The best performances were observed when the sizes of series and shunt resonator are $150{\mu}m{\times}l50{\mu}m\;and\;5{\mu}m{\times}50{\mu}m$, respectively. Out-of-band rejection was improved about 10dB and bandwidth was broadened from 30MHz to 100MHz utilizing inductor tuning on $2{\times}2\;and\; 4{\times}2$ ladder-type BPFs.

• The Journal of the Acoustical Society of Korea
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• v.15 no.4E
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• pp.14-20
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• 1996

The double mode SAW resonator filters have the serious shortcoming that out-of-band rejection above the passband is quite poor. Hence a new structure of the double mode filter is designed with the COM (Coupling Of MOdes) theory with better out-of-band rejection characteristics while keeping all the beauties of the conventional type. The second goal of the design is to reduce the planar size of the structure so that mass productivity of low frequency devices can be improved. For those purposes, several IDT's and relfector gratings are added to or subtracted from the conventional structure so that the modification can lead to better overall performance as a filter. As results of the investigation, several new double mode SAW resonator filter structures are developed. A new structure shows 10dB more out-of-band rejection that the conventional type with 25% reduced device size. Good agreement is demonstrated between the analytical results and experimental results for an illustrative 325MHz four pole resonator filter on 64°YX LiNbO3.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.5
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• pp.872-882
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• 1994

In this paper, the Low Noise Amplifier(LNA) is designed and fabricated to include a band pass filter characteristics considering the antenna system characteristics according to the transmitting and receiving signal level of communication satellite transponder. As an example, a 2-stage low noise amplifier and a 4-stage amplifier and designed, fabricated and measured at 14,0~14.5GHz of receiving frequency band. This fabricated LNA has shown the gain with very good flatness within pass-band, and its gain decreases rapidly out of band resulting in supperssion of the transmitting signal power leakage. It has shown the 20.3dB +- 0.1dB of pass-band gain, the 1.44dB +-0.04dB of noise figure and the 14dB rejection out of band(12.25~12.75GHz). The gain flatness, noise figure and group delay of this 2-stage LNA satisfactorily met the simulation results. And the fabricated 4-stage amplifier has shown the more than 42dB of pass-band gain, the +-0.25dB of flatness and the 28dB of the rejection effect for transmitting power leakage. The 2-stage LNA and 4-stage amplifier, in this paper, will bring a design margin for the input filter and also result in the system cost reduction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.275-278
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• 2003

The aim of the study is to scrutinize the relationship between the area of resonance and center frequency with varying thickness by analyzing the characteristics of 2-port resonator. This was done through ideal design using Leach model equivalent model modified Mason model equivalent circuit for the application of bandpass filter high-frequency band with resonator Moreover, through the design of ladder-type BPF, we were able to observe changes in bandwidth, resonation, out-of-band rejection depending on the number and area of resonator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.838-841
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• 2003

The aim of the study is to scrutinize the relationship between the area of resonance and insertion loss by analyzing the characteristics of 2-port resonator. This was done through designing an air-gap type Film Bulk Acoustic Resonator (FBAR) by using CAD model for the application of bandpass filter of high-frequency band with piezoelectric thin film. Moreover, through the design of ladder-type BPF, we were able to observe changes in bandwidth, resonation, out-of-band rejection depending on the number and area of resonator.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.2
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• pp.505-513
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• 1996

In this paper the dual-mode bandpass filters with a Chebyshev response are designed and manufactured at Ku-band as well as K-band. Manufactured filters are resonated by two independent orthogonal $TE_{113}$ circular-cavity modes and characterized by 4-pole Chebyshev function. One is operating at a center frequency of 12.5GHz with a bandwidth of 100MHz and the other, a center frequency of 19.25GHz with 120MHz, respectively. The measureed experimental results of a 12.5GHZ dual-mode filter ahve a 1.2dB intertion loss in the passband and 65dB out-of-rejection, and a 19.25GHz filter has a 1.55dB insertion loss and 70dB out-of-rejection. These experimantal results shoults show good agreements with the design specifications.

• Journal of electromagnetic engineering and science
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• v.14 no.2
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• pp.47-53
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• 2014

This paper presents a high gain and high harmonic rejection low-noise amplifier (LNA) for software-defined radio receiver. This LNA exploits the high quality factor (Q) series resonance technique. High Q series resonance can amplify the in-band signal voltage and attenuate the out-band signals. This is achieved by a source impedance transformation. This technique does not consume power and can easily support multiband operation. The chip is fabricated in a $0.13-{\mu}m$ CMOS. It supports four bands (640, 710, 830, and 1,070MHz). The measured forward gain ($S_{21}$) is between 12.1 and 17.4 dB and the noise figure is between 2.7 and 3.3 dB. The IIP3 measures between -5.7 and -10.8 dBm, and the third harmonic rejection ratios are more than 30 dB. The LNA consumes 9.6 mW from a 1.2-V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.284-290
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• 2004

In this paper, two types of thin nim bulk acoustic resonator(TFBAR) ladder filters are desisted and fabricated to analyze the effects of on-wafer inductor integration. To suppress the overmode phenomenon a 1 $\mu\textrm{m}$ thick air-gap is fabricated under the TFBAR and aluminum nitride is used for piezoelectric material, while platinum is employed for the top and bottom electrodes. The Tx filter in a duplexer, which usually has a steeper skirt characteristics o the right side of the passband, is designed with four serial and two shunt resonators, namely, a 4/2 stage. Similarly, the Rx filter is devised with a 3/4 stage to create a mirrored image of the Tx filter passband characteristics. Fabricated on-wafer spiral inductors with underpass reveals the Q factor of 5～9 at 2 ㎓. Inductor integrated filters have approximately 10 to 12 ㏈ out-of-band rejection improvement, when compared to the original filters.

• ETRI Journal
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• v.34 no.4
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• pp.518-526
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• 2012

This paper proposes LC voltage-controlled oscillator (VCO) phase-locked loop (PLL) and ring-VCO PLL topologies with low-phase noise. Differential control loops are used for the PLL locking through a symmetrical transformer-resonator or bilaterally controlled varactor pair. A differential compensation mechanism suppresses out-band spurious tones. The prototypes of the proposed PLL are implemented in a CMOS 65-nm or 45-nm process. The measured results of the LC-VCO PLL show operation frequencies of 3.5 GHz to 5.6 GHz, a phase noise of -118 dBc/Hz at a 1 MHz offset, and a spur rejection of 66 dBc, while dissipating 3.2 mA at a 1 V supply. The ring-VCO PLL shows a phase noise of -95 dBc/Hz at a 1 MHz offset, operation frequencies of 1.2 GHz to 2.04 GHz, and a spur rejection of 59 dBc, while dissipating 5.4 mA at a 1.1 V supply.