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A Study on the Out-of-Band Rejection Improvement of TFBAR Ladder Filter using On-Wafer Inductors  

김종수 (연세대학교 전지전자공학과)
구명권 ((주)엠에스 솔루)
육종관 (연세대학교 전지전자공학과)
Publication Information
Abstract
In this paper, two types of thin nim bulk acoustic resonator(TFBAR) ladder filters are desisted and fabricated to analyze the effects of on-wafer inductor integration. To suppress the overmode phenomenon a 1 $\mu\textrm{m}$ thick air-gap is fabricated under the TFBAR and aluminum nitride is used for piezoelectric material, while platinum is employed for the top and bottom electrodes. The Tx filter in a duplexer, which usually has a steeper skirt characteristics o the right side of the passband, is designed with four serial and two shunt resonators, namely, a 4/2 stage. Similarly, the Rx filter is devised with a 3/4 stage to create a mirrored image of the Tx filter passband characteristics. Fabricated on-wafer spiral inductors with underpass reveals the Q factor of 5~9 at 2 ㎓. Inductor integrated filters have approximately 10 to 12 ㏈ out-of-band rejection improvement, when compared to the original filters.
Keywords
TFBAR; Ladder Filter; On-wafer Inductor; Out-of-Band Rejection;
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