• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.368-368
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• 2012

We report solution-processed, high-performance single-crystal organic nanowire transistors fabricated from a novel indolocarbazole (IC) derivative. The direct printing process was utilized to generate single-crystal organic nanowire arrays enabling the simultaneous synthesis, alignment and patterning of nanowires using molecular ink solutions. Using this method, single-crystal organic nanowires can easily be synthesized by self-assembly and crystallization of organic molecules within the nanoscale channels of molds, and these nanowires can then be directly transferred to specific positions on substrates to generate nanowire arrays by a direct printing process. These new molecules are particularly suitable for p-channel organic field-effect transistors (OFETs) because of the high level of crystallinity usually found in IC derivatives. Selected area diffraction (SAED) and X-ray diffraction (XRD) experiments on these solution-processed nanowires showed high crystallinity. Transistors fabricated with these nanowires gave a hole mobility as high as 1.0 cm2V-1s-1 with nanowire arrays with the direct printing process.

• Bulletin of the Korean Chemical Society
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• 제33권4호
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• pp.1128-1134
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• 2012

We investigated a new method for patterning organic field-effect transistors (OFETs) using a photopatternable conducting polymer nanocomposite, consisting of poly(3-hexylthiophene) (P3HT)-coated gold nanoparticles (AuNPs) that had been modified with a photoreactive cinnamate group, to form P3HT-AuNP-CI. We found that the addition of the cinnamate group to the nanoparticle surface assisted the preparation of a solvent-resistive semiconducting film and preserved the P3HT ordering, which was interrupted by Au-P3HT interactions, as well as provided UV-controllable electrical properties. The P3HT-AuNPs-CI films could be microscale-patterned via a UV crosslinking photoreaction, represented as a promising photopatternable semiconductor material for use in advanced applications, with tunable electrical properties for fabrication of sub-micron and microscale electronic devices.

• Current Applied Physics
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• 제18권11호
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• pp.1415-1421
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• 2018

Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density > $280mA/cm^2$ at $V_d=5V$. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.

• ETRI Journal
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• 제33권6호
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• pp.887-896
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• 2011

We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic field-effect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.277.2-277.2
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• 2014

For next-generation electronic applications, human-machine interface devices have recently been demonstrated such as the wearable computer as well as the electronic skin (e-skin). For integration of those systems, it is essential to develop many kinds of components including displays, energy generators and sensors. In particular, flexible sensing devices to detect some stimuli like strain, pressure, light, temperature, gase and humidity have been investigated for last few decades. Among many condidates, a pressure sensing device based on organic field-effect transistors (OFETs) is one of interesting structure in flexible touch displays, bio-monitoring and e-skin because of their flexibility. In this study, we have investigated a flexible e-skin based on highly sensitive, pressure-responsive OFETs using microstructured ferroelectric gate dielectrics, which simulates both rapidly adapting (RA) and slowly adatping (SA) mechanoreceptors in human skin. In SA-type static pressure, furthermore, we also demonstrate that the FET array can detect thermal stimuli for thermoreception through decoupling of the input signals from simultaneously applied pressure. The microstructured highly crystalline poly(vinylidene fluoride-trifluoroethylene) possessing piezoelectric-pyroelectric properties in OFETs allowed monitoring RA- and SA-mode responses in dyanamic and static pressurizing conditions, which enables to apply the e-skin to bio-monitoring of human and robotics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.500-500
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• 2011

With recent advances in flexible and stretchable electronics, the development of physically responsive field-effect transistors (physi-FETs) that are easily integrated with transformable substrates may enable the omnipresence of physical sensing devices in electronic gadgets. However, physical stimuli typically induce whole sensing physi-FET devices under global influences that also cause changes in the parameters of FET transducers, such as channel mobility and dielectric capacitance that prevent proper interpretations of response in sensing materials. Extended-gate structures with isolated stimuli have been used recently in physi-FETs to demonstrate performances of sensing materials only. However, such approaches are limited to prototype researches since isolated stimuli rarely occur in real-life applications. In this report, we theoretically and experimentally demonstrated that integrating piezoelectric nanocomposites directly into flexible organic FETs (OFETs) as gate dielectrics provides a general research direction to physi-FETs with a simple device structure and the capability of precisely investigating functional materials. Measurements with static stimulations, which cannot be performed in conventional systems, exhibited giant-positive d33 values of nanocomposites of barium titanate (BT) NPs and poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)).

• 접착 및 계면
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• 제22권3호
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• pp.91-97
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• 2021

본 연구는 Parylene C 유전체 표면에 유기 자기조립단분자막(self-assembled monolayer, SAM) 중간층을 도입함으로써 표면특성을 제어하고 최종적으로 유기전계효과 트랜지스터(organic field-effect transistors, OFETs)의 전기적 안정성을 향상시킨 결과를 제시하였다. 유기 중간층을 적용함으로써, Parylene C 게이트 유전체의 표면 에너지를 제어하였으며, OFET의 가장 중요한 성능변수인 전계효과 이동도(field-effect transistor, μ_FET)와 문턱 전압 (threshold voltage, V_th)의 성능향상과 구동 안정성을 증대시켰다. 단순히 Parylene C 유전체를 적용한 Bare OFET에서 μ_FET 값은 0.12 cm²V^-1s^-1가 측정되었으나, hexamethyldisilazane (HMDS)과 octadecyltrichlorosilane (ODTS)를 중간층으로 적용된 소자에서는 각각 0.32과 0.34 cm²V^-1s^-1로 μ_FET가 증가하였다. 또한 1000번의 transfer 특성의 반복측정을 통해 ODTS 처리한 OFET의 μ_FET와 V_th의 변화가 가장 작게 나타남을 확인하였다. 이 연구를 통해 유기 SAM 중간층, 특히 ODTS는 효과적으로 Parylene C 표면을 알킬 사슬로 덮어 극성도를 낮춤과 함께 전하 트래핑을 감소시켜 소자의 전기적 구동 안정성을 증가시킬 수 있음을 확인하였다.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.129-134
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• 2018

Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.

• 한국전기전자재료학회논문지
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• 제30권10호
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• pp.665-671
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• 2017

Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electron-withdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.276-279
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• 2008

Air stable n-type organic field effect transistors (OFETs) based on CB60B are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of $0.05\;cm^2P/V\;s$ in ambient air. Replacing the gate dielectric material by $SiO_2$ resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in ambient air.