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http://dx.doi.org/10.1016/j.cap.2018.08.007

Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current  

Sarjidan, M.A. Mohd (Low Dimensional Materials Research Centre, Department of Physics, University of Malaya)
Shuhaimi, Ahmad (Low Dimensional Materials Research Centre, Department of Physics, University of Malaya)
Majid, W.H. Abd. (Low Dimensional Materials Research Centre, Department of Physics, University of Malaya)
Publication Information
Current Applied Physics / v.18, no.11, 2018 , pp. 1415-1421 More about this Journal
Abstract
Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density > $280mA/cm^2$ at $V_d=5V$. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.
Keywords
VOFETs; MEH-PPV; Saturation region; Leakage current; Electroluminescence;
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